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    MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SPACER LAYER CONTAINING GALLIUM OXIDE, PARTIALLY OXIDIZED COPPER
    1.
    发明申请
    MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SPACER LAYER CONTAINING GALLIUM OXIDE, PARTIALLY OXIDIZED COPPER 有权
    含有氧化铝，部分氧化铜的间隔层的磁电阻效应元件

    公开(公告)号：US20120237796A1

    公开(公告)日：2012-09-20

    申请号：US13049195

    申请日：2011-03-16

    申请人： Hayato KOIKE ,  Tsutomu CHOU ,  Yoshihiro TSUCHIYA ,  Hironobu MATSUZAWA

    发明人： Hayato KOIKE ,  Tsutomu CHOU ,  Yoshihiro TSUCHIYA ,  Hironobu MATSUZAWA

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3929 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996 ,  Y10T428/1121

    摘要： A magneto-resistive effect (MR) element includes first and second magnetic layers where a relative angle formed by magnetization directions changes in response to an external magnetic field and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The first magnetic layer is positioned closer to a substrate above which the MR element is formed than the second magnetic layer. The spacer layer includes a main spacer layer that is composed of gallium oxide as a primary component and a bottom layer that is positioned between the main spacer layer and the first magnetic layer and that is composed of partially oxidized copper as a primary component.

    摘要翻译： 磁阻效应（MR）元件包括第一和第二磁性层，其中由磁化方向形成的相对角响应于外部磁场而变化，并且间隔层位于第一磁性层和第二磁性层之间。 第一磁性层定位成比第二磁性层更靠近形成MR元件的衬底。 间隔层包括由氧化镓作为主要成分构成的主间隔层和位于主间隔层和第一磁性层之间并由部分氧化的铜作为主要成分的底层。