公开(公告)号：US07300597B2

公开(公告)日：2007-11-27

申请号：US11535551

申请日：2006-09-27

申请人： Hee Yeop Chae ,  Jeremiah T. P. Pender ,  Gerardo A. Delgadino ,  Xiaoye Zhao ,  Yan Ye

发明人： Hee Yeop Chae ,  Jeremiah T. P. Pender ,  Gerardo A. Delgadino ,  Xiaoye Zhao ,  Yan Ye

IPC分类号： B44C1/22

CPC分类号： H01L21/76808 ,  H01L21/31116

摘要： A process of selectively etching a sacrificial light absorbing material (SLAM) over a dielectric material, such as carbon doped oxide, on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a hydrofluorocarbon gas, an optional hydrogen-containing gas, an optional fluorine-rich fluorocarbon gas, a nitrogen gas, an oxygen gas, and an inert gas. The process could provide a SLAM to a dielectric material etching selectivity ratio greater than 10:1.

公开(公告)号：US07309448B2

公开(公告)日：2007-12-18

申请号：US10706902

申请日：2003-11-12

申请人： Hee Yeop Chae ,  Jeremiah T. P. Pender ,  Gerardo A. Delgadino ,  Xiaoye Zhao ,  Yan Ye

发明人： Hee Yeop Chae ,  Jeremiah T. P. Pender ,  Gerardo A. Delgadino ,  Xiaoye Zhao ,  Yan Ye

IPC分类号： B44C1/22 ,  H01L21/302

CPC分类号： H01L21/76808 ,  H01L21/31116

摘要： A process of selectively etching a sacrificial light absorbing material (SLAM) over a dielectric material, such as carbon doped oxide, on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a hydrofluorocarbon gas, an optional hydrogen-containing gas, an optional fluorine-rich fluorocarbon gas, a nitrogen gas, an oxygen gas, and an inert gas. The process could provide a SLAM to a dielectric material etching selectivity ratio greater than 10:1.

摘要翻译： 使用等离子体蚀刻室中的气体混合物的等离子体在衬底上在介电材料（例如碳掺杂氧化物）上选择性地蚀刻牺牲光吸收材料（SLAM）的工艺。 气体混合物包括氢氟烃气体，任选的含氢气体，任选的富氟碳氟化合物气体，氮气，氧气和惰性气体。 该方法可以提供大于10:1的介电材料蚀刻选择比的SLAM。

公开(公告)号：US20070020944A1

公开(公告)日：2007-01-25

申请号：US11535551

申请日：2006-09-27

申请人： Hee Yeop Chae ,  Jeremiah Pender ,  Gerardo Delgadino ,  Xiaoye Zhao ,  Yan Ye

发明人： Hee Yeop Chae ,  Jeremiah Pender ,  Gerardo Delgadino ,  Xiaoye Zhao ,  Yan Ye

IPC分类号： C23F1/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76808 ,  H01L21/31116

摘要： A process of selectively etching a sacrificial light absorbing material (SLAM) over a dielectric material, such as carbon doped oxide, on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a hydrofluorocarbon gas, an optional hydrogen-containing gas, an optional fluorine-rich fluorocarbon gas, a nitrogen gas, an oxygen gas, and an inert gas. The process could provide a SLAM to a dielectric material etching selectivity ratio greater than 10:1.

摘要翻译： 使用等离子体蚀刻室中的气体混合物的等离子体在衬底上在介电材料（例如碳掺杂氧化物）上选择性地蚀刻牺牲光吸收材料（SLAM）的工艺。 气体混合物包括氢氟烃气体，任选的含氢气体，任选的富氟碳氟化合物气体，氮气，氧气和惰性气体。 该方法可以提供大于10:1的介电材料蚀刻选择比的SLAM。

公开(公告)号：US20130233245A1

公开(公告)日：2013-09-12

申请号：US13722035

申请日：2012-12-20

申请人： Hee Yeop Chae ,  Won Tae Hwang ,  Min Jun Jo

发明人： Hee Yeop Chae ,  Won Tae Hwang ,  Min Jun Jo

IPC分类号： B05B5/053

CPC分类号： B05B5/0533 ,  B05B5/087 ,  H01L51/0005 ,  H01L51/5016 ,  H01L51/56

摘要： An electrostatic spray printing apparatus includes a nozzle, a first voltage supply, and two guide electrodes. The nozzle sprays a solution containing an organic material. The first voltage supply divides the solution sprayed from the nozzle into fine droplets by applying a positive voltage to the nozzle. The guide electrodes are arranged to be spaced apart from each other with an end of the nozzle therebetween, extends in a first direction, and are grounded. The electrostatic spray printing apparatus forms an organic pattern with a uniform thickness.

摘要翻译： 静电喷涂装置包括喷嘴，第一电压源和两个引导电极。 喷嘴喷射含有有机材料的溶液。 第一电压源通过向喷嘴施加正电压将从喷嘴喷射的溶液分成微小的液滴。 引导电极被布置成彼此间隔开，其间的喷嘴的端部在第一方向上延伸并且接地。 静电喷涂装置形成均匀厚度的有机图案。