公开(公告)号：US20070122734A1

公开(公告)日：2007-05-31

申请号：US11273667

申请日：2005-11-14

申请人： Jeanette Roberts ,  Heidi Cao ,  Wang Yueh

发明人： Jeanette Roberts ,  Heidi Cao ,  Wang Yueh

IPC分类号： G03C1/00

CPC分类号： G03F7/0392 ,  G03F7/0045

摘要： In one embodiment, a photoacid generator is attached to a primary resist molecule having a radius of gyration of less than about 3 nanometers, the primary molecule other than a traditional photoresist polymer. This embodiment may have increased homogeneity and decreased acid diffusion, which may increase the sensitivity of the resist and decrease line width roughness.

摘要翻译： 在一个实施方案中，将光致酸发生剂连接到具有小于约3纳米的回转半径的主抗蚀剂分子，所述主要分子不同于传统的光致抗蚀剂聚合物。 该实施方案可能具有增加的均匀性和降低的酸扩散，这可能增加抗蚀剂的灵敏度并降低线宽粗糙度。

公开(公告)号：US20060292500A1

公开(公告)日：2006-12-28

申请号：US11165717

申请日：2005-06-24

申请人： Jeanette Roberts ,  Heidi Cao ,  Wang Yueh

发明人： Jeanette Roberts ,  Heidi Cao ,  Wang Yueh

IPC分类号： G03F7/26

CPC分类号： G03F7/40

摘要： Numerous embodiments of a method to increase the mechanical strength of a photoresist structure are described. In one embodiment of the present invention, a photoresist material is dispensed over a substrate to form a photoresist layer. The photoresist material is exposed to a first radiation treatment to define a pattern to be formed on the photoresist layer. A developer solution is applied to the photoresist material to form the pattern and rinsed with a rinse solution to remove the developer solution. The photoresist material is exposed to a second radiation treatment to induce cross-linking.

摘要翻译： 描述了增加光致抗蚀剂结构的机械强度的方法的许多实施例。 在本发明的一个实施例中，将光致抗蚀剂材料分配在衬底上以形成光致抗蚀剂层。 光致抗蚀剂材料暴露于第一次辐射处理以限定在光致抗蚀剂层上形成的图案。 将显影剂溶液应用于光致抗蚀剂材料以形成图案，并用冲洗溶液漂洗以除去显影剂溶液。 将光致抗蚀剂材料暴露于第二次辐射处理以诱导交联。

公开(公告)号：US20070059634A1

公开(公告)日：2007-03-15

申请号：US11228589

申请日：2005-09-15

申请人： Heidi Cao ,  Wang Yueh ,  Jeanette Roberts

发明人： Heidi Cao ,  Wang Yueh ,  Jeanette Roberts

IPC分类号： G03C1/00

CPC分类号： G03F7/0392 ,  G03F7/2004 ,  Y10S430/106

摘要： Numerous embodiments of a method to prevent outgassing from a low activation energy photoresist are described. In one embodiment of the present invention, a photoresist material is dispensed over a substrate to form a photoresist layer. The photoresist layer includes branched polymers coupled with acetal or ketal linkages. An exposed portion of the photoresist layer is exposed to a radiation treatment to cleave the acetal or ketal linkages and separate the branched polymers. The photoresist layer is baked at a temperature below about 100° C., and the separated branched polymers are too large to outgass from the photoresist layer.

摘要翻译： 描述了防止从低活化能光致抗蚀剂脱气的方法的许多实施方案。 在本发明的一个实施例中，将光致抗蚀剂材料分配在衬底上以形成光致抗蚀剂层。 光致抗蚀剂层包括与缩醛或缩酮键连接的支链聚合物。 将光致抗蚀剂层的暴露部分暴露于辐射处理以切割缩醛或缩酮键并分离支化聚合物。 光致抗蚀剂层在低于约100℃的温度下烘烤，并且分离的支化聚合物太大而不能从光致抗蚀剂层逸出。

公开(公告)号：US20050267172A1

公开(公告)日：2005-12-01

申请号：US11033464

申请日：2005-01-11

申请人： Michael Franklin ,  Jeanette Roberts ,  Trek Aboul-Fadl

发明人： Michael Franklin ,  Jeanette Roberts ,  Trek Aboul-Fadl

IPC分类号： A61K31/41

CPC分类号： C07D293/06

摘要： Disclosed are compounds having the formula wherein R1 is hydrogen, an alkyl group, an aryl group, a cycloalkyl group, an alkenyl group, an alkynyl group, an aralkyl group, or ═O, R2 is an alkyl group, an aryl group, a cycloalkyl group, an alkenyl group, an alkynyl group, or an aralkyl group, or the pharmaceutically acceptable salt or ester thereof. Also disclosed are methods of using the compounds.

摘要翻译： 公开了具有下式的化合物其中R 1是氢，烷基，芳基，环烷基，烯基，炔基，芳烷基或-O，R“ > 2是烷基，芳基，环烷基，烯基，炔基或芳烷基，或其药学上可接受的盐或酯。 还公开了使用该化合物的方法。

公开(公告)号：US07425635B2

公开(公告)日：2008-09-16

申请号：US11033464

申请日：2005-01-11

申请人： Michael R. Franklin ,  Jeanette Roberts ,  Trek Aboul-Fadl

发明人： Michael R. Franklin ,  Jeanette Roberts ,  Trek Aboul-Fadl

IPC分类号： C07C395/00 ,  C07D293/00

CPC分类号： C07D293/06

摘要： Disclosed are compounds having the formula wherein R1 is hydrogen, an alkyl group, an aryl group, a cycloalkyl group, an alkenyl group, an alkynyl group, an aralkyl group, or ═O, R2 is an alkyl group, an aryl group, a cycloalkyl group, an alkenyl group, an alkynyl group, or an aralkyl group, or the pharmaceutically acceptable salt or ester thereof. Also disclosed are methods of using the compounds.

摘要翻译： 公开了具有下式的化合物其中R 1是氢，烷基，芳基，环烷基，烯基，炔基，芳烷基或-O，R“ > 2是烷基，芳基，环烷基，烯基，炔基或芳烷基，或其药学上可接受的盐或酯。 还公开了使用该化合物的方法。