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公开(公告)号：US20070059634A1
公开(公告)日：2007-03-15
申请号：US11228589
申请日：2005-09-15
申请人： Heidi Cao , Wang Yueh , Jeanette Roberts
发明人： Heidi Cao , Wang Yueh , Jeanette Roberts
IPC分类号： G03C1/00
CPC分类号： G03F7/0392 , G03F7/2004 , Y10S430/106
摘要： Numerous embodiments of a method to prevent outgassing from a low activation energy photoresist are described. In one embodiment of the present invention, a photoresist material is dispensed over a substrate to form a photoresist layer. The photoresist layer includes branched polymers coupled with acetal or ketal linkages. An exposed portion of the photoresist layer is exposed to a radiation treatment to cleave the acetal or ketal linkages and separate the branched polymers. The photoresist layer is baked at a temperature below about 100° C., and the separated branched polymers are too large to outgass from the photoresist layer.
摘要翻译： 描述了防止从低活化能光致抗蚀剂脱气的方法的许多实施方案。 在本发明的一个实施例中，将光致抗蚀剂材料分配在衬底上以形成光致抗蚀剂层。 光致抗蚀剂层包括与缩醛或缩酮键连接的支链聚合物。 将光致抗蚀剂层的暴露部分暴露于辐射处理以切割缩醛或缩酮键并分离支化聚合物。 光致抗蚀剂层在低于约100℃的温度下烘烤，并且分离的支化聚合物太大而不能从光致抗蚀剂层逸出。
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公开(公告)号：US20070122734A1
公开(公告)日：2007-05-31
申请号：US11273667
申请日：2005-11-14
申请人： Jeanette Roberts , Heidi Cao , Wang Yueh
发明人： Jeanette Roberts , Heidi Cao , Wang Yueh
IPC分类号： G03C1/00
CPC分类号： G03F7/0392 , G03F7/0045
摘要： In one embodiment, a photoacid generator is attached to a primary resist molecule having a radius of gyration of less than about 3 nanometers, the primary molecule other than a traditional photoresist polymer. This embodiment may have increased homogeneity and decreased acid diffusion, which may increase the sensitivity of the resist and decrease line width roughness.
摘要翻译： 在一个实施方案中，将光致酸发生剂连接到具有小于约3纳米的回转半径的主抗蚀剂分子，所述主要分子不同于传统的光致抗蚀剂聚合物。 该实施方案可能具有增加的均匀性和降低的酸扩散，这可能增加抗蚀剂的灵敏度并降低线宽粗糙度。
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公开(公告)号：US20060292500A1
公开(公告)日：2006-12-28
申请号：US11165717
申请日：2005-06-24
申请人： Jeanette Roberts , Heidi Cao , Wang Yueh
发明人： Jeanette Roberts , Heidi Cao , Wang Yueh
IPC分类号： G03F7/26
CPC分类号： G03F7/40
摘要： Numerous embodiments of a method to increase the mechanical strength of a photoresist structure are described. In one embodiment of the present invention, a photoresist material is dispensed over a substrate to form a photoresist layer. The photoresist material is exposed to a first radiation treatment to define a pattern to be formed on the photoresist layer. A developer solution is applied to the photoresist material to form the pattern and rinsed with a rinse solution to remove the developer solution. The photoresist material is exposed to a second radiation treatment to induce cross-linking.
摘要翻译： 描述了增加光致抗蚀剂结构的机械强度的方法的许多实施例。 在本发明的一个实施例中，将光致抗蚀剂材料分配在衬底上以形成光致抗蚀剂层。 光致抗蚀剂材料暴露于第一次辐射处理以限定在光致抗蚀剂层上形成的图案。 将显影剂溶液应用于光致抗蚀剂材料以形成图案，并用冲洗溶液漂洗以除去显影剂溶液。 将光致抗蚀剂材料暴露于第二次辐射处理以诱导交联。
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4.发明授权公开(公告)号：US07427463B2
公开(公告)日：2008-09-23
申请号：US10686031
申请日：2003-10-14
CPC分类号： G03F7/0392 , G03F7/0397
摘要： Chemically amplified photoresists with reduced outgassing or no outgassing may be used in a vacuum environment of a lithography tool, such as an extreme ultraviolet lithography tool. A chemically amplified photoresist has a photoacid generator molecule. When the photoacid generator is irradiated, an acid is generated. The acid reacts with a protecting group in the photoresist to form an open-ring structure with reduced outgassing or no outgassing.
摘要翻译： 可以在光刻工具的真空环境（例如极紫外光刻工具）中使用化学放大的光致抗蚀剂，其具有减少的放气或不发生除气。 化学放大光致抗蚀剂具有光酸产生剂分子。 当光酸发生剂被照射时，产生酸。 酸与光致抗蚀剂中的保护基反应以形成具有减少的除气或不排气的开环结构。
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5.发明申请Method of reducing sensitivity of EUV photoresists to out-of-band radiation and EUV photoresists formed according to the method 有权降低EUV光致抗蚀剂对根据该方法形成的带外辐射和EUV光致抗蚀剂敏感性的方法公开(公告)号：US20060223000A1
公开(公告)日：2006-10-05
申请号：US11093889
申请日：2005-03-29
申请人： Manish Chandhok , Wang Yueh , Heidi Cao
发明人： Manish Chandhok , Wang Yueh , Heidi Cao
IPC分类号： G03C1/00
CPC分类号： G03F7/0392 , G03F7/2004
摘要： A modified EUV photoresist and a method of making the resist. The modified resist includes an EUV photoresist and a LAM incorporated into the EUV photoresist.
摘要翻译： 改进的EUV光致抗蚀剂和制造抗蚀剂的方法。 改性抗蚀剂包括EUV光致抗蚀剂和结合到EUV光致抗蚀剂中的LAM。
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6.发明申请Resist compounds including acid labile groups attached to polymeric chains at anhydride linkages 有权抗酸化合物包括在酸酐键连接到聚合物链上的酸不稳定基团公开(公告)号：US20050221219A1
公开(公告)日：2005-10-06
申请号：US10815606
申请日：2004-03-31
CPC分类号： G03F7/0397
摘要： A compound including a polymeric chain, and an acid labile group attached to the polymeric chain at an anhydride linkage is disclosed. Compositions including the compound, and methods of using the compositions are also disclosed.
摘要翻译： 公开了包含聚合物链的化合物和在酸酐键连接到聚合物链上的酸不稳定基团。 还公开了包括该化合物的组合物和使用该组合物的方法。
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公开(公告)号：US20050158650A1
公开(公告)日：2005-07-21
申请号：US10762031
申请日：2004-01-21
摘要： In one embodiment, a photoactive compound may be attached to a polymer backbone. This embodiment may be more resistant to the generation of reactive outgassing components and may exhibit better contrast.
摘要翻译： 在一个实施方案中，光活性化合物可以连接到聚合物主链上。 该实施方案可以更好地抵抗反应性除气组分的产生并且可以表现出更好的对比度。
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公开(公告)号：US20240219842A1
公开(公告)日：2024-07-04
申请号：US10956321
申请日：2004-09-30
申请人： Manish Chandhok , Wang Yueh , Heidi Cao
发明人： Manish Chandhok , Wang Yueh , Heidi Cao
摘要： Numerous embodiments of a method for developing a photoresist material are described. In one embodiment of the present invention, a photoresist layer is disposed over a substrate. The photoresist layer has a bulk region to form a first region and a second region. A photoresist developer made of a tetra-alkyl ammonium hydroxide compound is applied to the photoresist layer to react only with substantial portions of the first region and to prevent penetration of the developer solution into the bulk portion near the second region.
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公开(公告)号：US07005227B2
公开(公告)日：2006-02-28
申请号：US10762031
申请日：2004-01-21
摘要： In one embodiment, a photoactive compound may be attached to a polymer backbone. This embodiment may be more resistant to the generation of reactive outgassing components and may exhibit better contrast.
摘要翻译： 在一个实施方案中，光活性化合物可以连接到聚合物主链上。 该实施方案可以更好地抵抗反应性除气组分的产生，并且可以表现出更好的对比度。
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10.发明申请Low outgassing and non-crosslinking series of polymers for EUV negative tone photoresists 有权低脱气和非交联系列聚合物，用于EUV负色光致抗蚀剂公开(公告)号：US20050147916A1
公开(公告)日：2005-07-07
申请号：US10750042
申请日：2003-12-30
申请人： Wang Yueh , Heidi Cao , Manish Chandhok
发明人： Wang Yueh , Heidi Cao , Manish Chandhok
CPC分类号： G03F7/0382
摘要： A series structure of a chemically amplified negative tone photoresist that is not based on cross-linking chemistry is herein described. The photoresist may comprise: a first aromatic structure copolymerized with a cycloolefin, wherein the cycloolefin is functionalized with a di-ol. The photoresist may also include a photo acid generator (PAG). When at least a portion of the negative tone photoresist is exposed to light (EUV or UV radiation), the PAG releases an acid, which reacts with the functionalized di-ol to rearrange into a ketone or aldehyde. Then new ketone or aldehyde is less soluble in developer solution, resulting in a negative tone photoresist.
摘要翻译： 这里描述了不基于交联化学的化学放大负色调光致抗蚀剂的串联结构。 光致抗蚀剂可以包括：与环烯共聚的第一芳族结构，其中环烯被二醇官能化。 光致抗蚀剂还可以包括光酸产生剂（PAG）。 当至少一部分负色调光致抗蚀剂暴露于光（EUV或UV辐射）时，PAG释放酸，其与官能化二醇反应以重排成酮或醛。 那么新的酮或醛在显影剂溶液中的溶解性较差，产生负色调光致抗蚀剂。
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