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公开(公告)号：US5626159A
公开(公告)日：1997-05-06
申请号：US686367
申请日：1996-07-25
IPC分类号： H01L21/304 , B08B3/10 , B08B3/12 , H01L21/00 , H01L21/306
CPC分类号： H01L21/02052 , B08B3/10 , B08B3/12 , H01L21/67057 , Y10S134/902
摘要： A method of cleaning a semiconductor wafer comprises placing liquid in a bath with a gas-liquid-interface defined at the surface of the liquid. A semiconductor wafer is placed in the bath so that it is oriented in a generally upright position with at least part of the wafer being in the liquid and below the gas-liquid-interface. Sonic energy is directed through the liquid. At least one of the position of the semiconductor wafer and the level of liquid in the bath relative to the semiconductor wafer is varied so that the entire surface of the wafer repeatedly passes through the gas-liquid-interface.
摘要翻译： 一种清洁半导体晶片的方法包括将液体放置在液体界面界定的液 - 液界面的浴中。 将半导体晶片放置在浴中，使得其定向在大致直立的位置，其中晶片的至少一部分在液体中并在气液界面下方。 声能被引导通过液体。 改变半导体晶片的位置和相对于半导体晶片的液体液位中的至少一个，使得晶片的整个表面反复通过气液界面。
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2.发明授权Method for cleaning semiconductor wafers with sonic energy and passing through a gas-liquid-interface 失效用声能清洗半导体晶片并通过气 - 液界面的方法
公开(公告)号：US5593505A
公开(公告)日：1997-01-14
申请号：US424904
申请日：1995-04-19
IPC分类号： H01L21/304 , B08B3/10 , B08B3/12 , H01L21/00 , H01L21/306
CPC分类号： H01L21/02052 , B08B3/10 , B08B3/12 , H01L21/67057 , Y10S134/902
摘要： A method of cleaning a semiconductor wafer comprises placing liquid in a bath with a gas-liquid-interface defined at the surface of the liquid. A semiconductor wafer is placed in the bath so that it is oriented in a generally upright position with at least part of the wafer being in the liquid and below the gas-liquid-interface. Sonic energy is directed through the liquid. At least one of the position of the semiconductor wafer and the level of liquid in the bath relative to the semiconductor wafer is varied so that the entire surface of the wafer repeatedly passes through the gas-liquid-interface.
摘要翻译： 一种清洁半导体晶片的方法包括将液体放置在液体界面界定的液 - 液界面的浴中。 将半导体晶片放置在浴中，使得其定向在大致直立的位置，其中晶片的至少一部分在液体中并在气液界面下方。 声能被引导通过液体。 改变半导体晶片的位置和相对于半导体晶片的液体液位中的至少一个，使得晶片的整个表面反复通过气 - 液界面。
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公开(公告)号：US5837662A
公开(公告)日：1998-11-17
申请号：US990123
申请日：1997-12-12
IPC分类号： B08B3/08 , B08B3/12 , H01L21/00 , H01L21/304 , H01L21/306 , C23G1/02 , C23G1/14 , H01L21/02
CPC分类号： H01L21/02052 , B08B3/08 , B08B3/12 , H01L21/67057
摘要： A process for cleaning contaminants from the surface of a semiconductor wafer after the wafer has been lapped. The process comprises contacting the wafer with an oxidizing agent to oxidize organic contaminants which may be present on the surface of the wafer. The wafer is then immersed in an aqueous bath comprising citric acid into which sonic energy is being directed to remove metallic contaminants which may be present on the surface of the wafer. After being immersed in the citric acid bath, the wafer is contacted with hydrofluoric acid to remove a layer of silicon dioxide which may be present on the surface of the wafer. The wafer is then immersed in an aqueous bath comprising an alkaline component and a surfactant, and into which sonic energy is being directed.
摘要翻译： 在研磨晶片之后，从半导体晶片的表面清洗污染物的方法。 该方法包括使晶片与氧化剂接触以氧化可能存在于晶片表面上的有机污染物。 然后将晶片浸入含有柠檬酸的水浴中，其中引入声能以除去可能存在于晶片表面上的金属污染物。 浸入柠檬酸浴后，将晶片与氢氟酸接触以除去可能存在于晶片表面上的二氧化硅层。 然后将晶片浸入包含碱性组分和表面活性剂的水浴中，并且其中引入声波能量。
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公开(公告)号：US07567601B1
公开(公告)日：2009-07-28
申请号：US11749047
申请日：2007-05-15
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/06213 , H01S5/12 , H01S5/2214 , H01S5/2216 , H01S2301/176
摘要： A laser diode having a composite passivation layer configured to control parasitic capacitance, especially in high speed laser applications, is disclosed. In one embodiment, a ridge waveguide laser is disclosed and includes: a substrate, an active layer disposed on the substrate, a ridge structure disposed on the active layer, and a contact layer disposed on the ridge structure. A composite passivation layer is disposed substantially laterally to the ridge structure. The composite passivation layer includes a silicon nitride bottom layer, a silicon nitride top layer, and a silicon dioxide middle layer interposed between the bottom and top layers. The passivation layers possess differing stress components that, when combined, cancel out the overall mechanical stress of the passivation layer. This enables relatively thick passivation layers to be employed in high speed laser diodes without increasing the risk of layer stress cracking and laser damage.
摘要翻译： 公开了一种激光二极管，其具有被配置为控制寄生电容的复合钝化层，特别是在高速激光应用中。 在一个实施例中，公开了一种脊波导激光器，包括：衬底，设置在衬底上的有源层，设置在有源层上的脊结构，以及设置在脊结构上的接触层。 复合钝化层基本上横向设置在脊状结构上。 复合钝化层包括氮化硅底层，氮化硅顶层和介于底层和顶层之间的二氧化硅中间层。 钝化层具有不同的应力分量，当组合时，消除钝化层的整体机械应力。 这使得能够在高速激光二极管中使用相对厚的钝化层，而不增加层应力开裂和激光损伤的风险。
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公开(公告)号：US07858493B2
公开(公告)日：2010-12-28
申请号：US12036157
申请日：2008-02-22
申请人： Weizhong Sun , Tsurugi Sudo , Jing Chai
发明人： Weizhong Sun , Tsurugi Sudo , Jing Chai
IPC分类号： H01L21/46
CPC分类号： H01S5/22 , H01S5/0202
摘要： In one example embodiment, a process for cleaving a wafer cell includes several acts. First a wafer cell is affixed to an adhesive film. Next, the adhesive film is stretched substantially uniformly. Then, the adhesive film is further stretched in a direction that is substantially orthogonal to a predetermined reference direction. Next, the wafer cell is scribed to form a notch that is oriented substantially parallel to the predetermined reference direction. Finally, the wafer cell is cleaved at a location substantially along the notch.
摘要翻译： 在一个示例实施例中，用于切割晶片单元的过程包括若干动作。 首先将晶片固定在粘合膜上。 接下来，粘合膜基本均匀地拉伸。 然后，粘合膜在与预定基准方向大致正交的方向上进一步拉伸。 接下来，将晶片单元刻划形成基本上平行于预定参考方向取向的凹口。 最后，晶片单元在大致沿着凹口的位置处被切割。
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公开(公告)号：US20080206913A1
公开(公告)日：2008-08-28
申请号：US12036157
申请日：2008-02-22
申请人： Weizhong Sun , Tsurugi Sudo , Jing Chai
发明人： Weizhong Sun , Tsurugi Sudo , Jing Chai
CPC分类号： H01S5/22 , H01S5/0202
摘要： In one example embodiment, a process for cleaving a wafer cell includes several acts. First a wafer cell is affixed to an adhesive film. Next, the adhesive film is stretched substantially uniformly. Then, the adhesive film is further stretched in a direction that is substantially orthogonal to a predetermined reference direction. Next, the wafer cell is scribed to form a notch that is oriented substantially parallel to the predetermined reference direction. Finally, the wafer cell is cleaved at a location substantially along the notch.
摘要翻译： 在一个示例实施例中，用于切割晶片单元的过程包括若干动作。 首先将晶片固定在粘合膜上。 接下来，粘合膜基本均匀地拉伸。 然后，粘合膜在与预定基准方向大致正交的方向上进一步拉伸。 接下来，将晶片单元刻划形成基本上平行于预定参考方向取向的凹口。 最后，晶片单元在大致沿着凹口的位置处被切割。
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公开(公告)号：US5839460A
公开(公告)日：1998-11-24
申请号：US970129
申请日：1997-11-13
申请人： Jing Chai , Jackie Watson
发明人： Jing Chai , Jackie Watson
CPC分类号： H01L21/67057 , B08B11/02 , B08B3/102 , B08B3/12 , Y10S134/902
摘要： An apparatus for cleaning semiconductor wafers includes a tank for containing a liquid and receiving a wafer holder with at least a portion of the wafers immersed in the liquid in the tank. A sonic energy generator imparts sonic energy to the liquid. A wafer-moving mechanism in the tank reciprocates and rotates the semiconductor wafer so that at least a portion of the wafer repeatedly passes through an upper surface of the liquid. The wafer-moving mechanism comprises a camming mechanism rotatably received in the tank and a drive for rotating the camming mechanism about a fixed central longitudinal axis of the camming mechanism to reciprocate and rotate the wafer. The camming mechanism includes a cam body having opposing flats spaced apart on opposite sides of its longitudinal axis and opposing gripping surfaces extending between the flats. The cam body has a cross-section defining a major axis and a minor axis, with the major axis of the cam body cross-section being greater than the minor axis. The gripping surfaces have a circumferentially extending groove for receiving a peripheral edge of the semiconductor wafer therein. The groove is sized for gripping the edge of the wafer as the camming mechanism rotates thereby to inhibit slippage of the wafer relative to the camming mechanism and to maintain uniform rotation and reciprocation of the wafer.
摘要翻译： 一种用于清洁半导体晶片的设备包括：用于容纳液体并接收具有至少一部分晶片的晶片保持器的槽，该晶片保持器浸没在槽中的液体中。 声能发生器向液体发出声能。 罐中的晶片移动机构使半导体晶片往复运动并旋转，使得晶片的至少一部分反复通过液体的上表面。 晶片移动机构包括可旋转地容纳在箱中的凸轮机构和用于使凸轮机构围绕凸轮机构的固定中心纵向轴线旋转的驱动器，以使晶片往复运动和旋转。 凸轮机构包括：凸轮体，其具有在其纵向轴线的相对侧上间隔开的相对的平面和在平面之间延伸的相对的夹持表面。 凸轮主体具有限定长轴和短轴的横截面，其中凸轮主体横截面的长轴大于短轴。 抓握表面具有周向延伸的凹槽，用于接收其中的半导体晶片的外围边缘。 该槽的尺寸适于在凸轮机构旋转时夹持晶片的边缘，从而抑制晶片相对于凸轮机构的滑动并保持晶片的均匀旋转和往复运动。
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