公开(公告)号：US20190043562A1

公开(公告)日：2019-02-07

申请号：US16072575

申请日：2016-02-12

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Zhiyong Li ,  Lu Zhang ,  Minxian Zhang

IPC: G11C11/54 ,  G11C11/56 ,  G11C5/02 ,  G06N3/063

Abstract: An example device in accordance with an aspect of the present disclosure includes an active oxide layer to form and dissipate a conductive bridge. The conductive bridge is to dissipate spontaneously within a relaxation time to enable the memory device to self-refresh according to volatile behavior in response to the input voltage being below a threshold corresponding to disregarding sneak current and noise of a crossbar array in which the memory device is to operate. The conductive bridge is to persist beyond the relaxation time to enable the memory device to retain programming for neuromorphic computing training according to non-volatile behavior of the memory device in response to the input voltage not being below the threshold.

公开(公告)号：US11043265B2

公开(公告)日：2021-06-22

申请号：US16072575

申请日：2016-02-12

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Zhiyong Li ,  Lu Zhang ,  Minxian Zhang

IPC: H01L27/10 ,  G11C11/54 ,  G11C11/56 ,  G06N3/063 ,  G11C5/02 ,  G11C13/00

Abstract: An example device in accordance with an aspect of the present disclosure includes an active oxide layer to form and dissipate a conductive bridge. The conductive bridge is to dissipate spontaneously within a relaxation time to enable the memory device to self-refresh according to volatile behavior in response to the input voltage being below a threshold corresponding to disregarding sneak current and noise of a crossbar array in which the memory device is to operate. The conductive bridge is to persist beyond the relaxation time to enable the memory device to retain programming for neuromorphic computing training according to non-volatile behavior of the memory device in response to the input voltage not being below the threshold.