公开(公告)号：US20170141160A1

公开(公告)日：2017-05-18

申请号：US15316762

申请日：2014-06-26

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Minxian Max ZHANG ,  Jianhua YANG ,  R. Stanley WILLIAMS

IPC: H01L27/24 ,  H01L45/00 ,  H01L27/02

CPC classification number: H01L27/2463 ,  H01L27/0248 ,  H01L27/2409 ,  H01L27/2418 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1675

Abstract: Protective elements are provided for non-volatile memory cells in crossbar arrays in which each memristor is situated at a crosspoint of the array. Each memristor is provided with a protective element. The protective element includes a layer of a first oxide that upon heating converts to a second oxide having a higher resistivity than the first oxide.