-
公开(公告)号：US07994616B2
公开(公告)日：2011-08-09
申请号：US12509065
申请日：2009-07-24
IPC分类号： H01L23/495
CPC分类号： H01L33/62 , H01L23/49582 , H01L24/48 , H01L2224/48091 , H01L2224/48247 , H01L2224/85439 , H01L2224/85464 , H01L2924/00014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2224/45099 , H01L2924/00
摘要： A lead frame (100) for a semiconductor device is formed by applying nickel plating (102), palladium plating (103), and gold flash plating (104) substantially entirely to lead frame body (101) such as copper thin plate in this order, and further applying silver plating (105) selectively to part of an inner part that is to be enclosed with a package of the semiconductor device. The lead frame (100) may also include a base of the package. The silver plating contributes to an excellent light reflectance and wire bonding efficiency of the inner part, whereas the gold flash plating contributes to an excellent resistance to corrosion and soldering efficiency of an outer part that is outside the package.
摘要翻译： 通过以大致整体的方式施加镀镍（102），镀钯（103）和镀金（104）的方式形成用于半导体器件的引线框架（100），以引导诸如铜薄板的框架体（101） 并且进一步将银电镀（105）选择性地施加到将被半导体器件的封装封装的内部部分的一部分。 引线框架（100）还可以包括封装的基部。 镀银有助于内部部件的良好的光反射率和引线接合效率，而闪镀电镀有助于在封装外部的外部部件具有优异的耐腐蚀性和焊接效率。
-
公开(公告)号：US20060102936A1
公开(公告)日：2006-05-18
申请号：US10542419
申请日：2004-01-13
IPC分类号： H01L31/112
CPC分类号： H01L33/62 , H01L23/49582 , H01L24/48 , H01L2224/48091 , H01L2224/48247 , H01L2224/85439 , H01L2224/85464 , H01L2924/00014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2224/45099 , H01L2924/00
摘要： A lead frame (100) for a semiconductor device is formed by applying nickel plating (102), palladium plating (103), and gold flash plating (104) substantially entirely to lead frame body (101) such as copper thin plate in this order, and further applying silver plating (105) selectively to part of an inner part that is to be enclosed with a package of the semiconductor device. The lead frame (100) may also include a base of the package. The silver plating contributes to an excellent light reflectance and wire bonding efficiency of the inner part, whereas the gold flash plating contributes to an excellent resistance to corrosion and soldering efficiency of an outer part that is outside the package.
摘要翻译： 通过以大致整体的方式施加镀镍（102），镀钯（103）和镀金（104）的方式形成用于半导体器件的引线框架（100），以引导诸如铜薄板的框架体（101） 并且进一步将银电镀（105）选择性地施加到将被半导体器件的封装封装的内部部分的一部分。 引线框架（100）还可以包括封装的基部。 镀银有助于内部部件的良好的光反射率和引线接合效率，而闪镀电镀有助于在封装外部的外部部件具有优异的耐腐蚀性和焊接效率。
-
公开(公告)号：US20090283791A1
公开(公告)日：2009-11-19
申请号：US12509065
申请日：2009-07-24
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L23/49582 , H01L24/48 , H01L2224/48091 , H01L2224/48247 , H01L2224/85439 , H01L2224/85464 , H01L2924/00014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2224/45099 , H01L2924/00
摘要： A lead frame (100) for a semiconductor device is formed by applying nickel plating (102), palladium plating (103), and gold flash plating (104) substantially entirely to lead frame body (101) such as copper thin plate in this order, and further applying silver plating (105) selectively to part of an inner part that is to be enclosed with a package of the semiconductor device. The lead frame (100) may also include a base of the package. The silver plating contributes to an excellent light reflectance and wire bonding efficiency of the inner part, whereas the gold flash plating contributes to an excellent resistance to corrosion and soldering efficiency of an outer part that is outside the package.
摘要翻译： 通过以大致整体的方式施加镀镍（102），镀钯（103）和镀金（104）的方式形成用于半导体器件的引线框架（100），以引导诸如铜薄板的框架体（101） 并且进一步将银电镀（105）选择性地施加到将被半导体器件的封装封装的内部部分的一部分。 引线框架（100）还可以包括封装的基部。 镀银有助于内部部件的良好的光反射率和引线接合效率，而闪镀电镀有助于在封装外部的外部部件具有优异的耐腐蚀性和焊接效率。
-
公开(公告)号：US20100155770A1
公开(公告)日：2010-06-24
申请号：US12716938
申请日：2010-03-03
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L23/49582 , H01L24/48 , H01L2224/48091 , H01L2224/48247 , H01L2224/85439 , H01L2224/85464 , H01L2924/00014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2224/45099 , H01L2924/00
摘要： A lead frame (100) for a semiconductor device is formed by applying nickel plating (102), palladium plating (103), and gold flash plating (104) substantially entirely to lead frame body (101) such as copper thin plate in this order, and further applying silver plating (105) selectively to part of an inner part that is to be enclosed with a package of the semiconductor device. The lead frame (100) may also include a base of the package. The silver plating contributes to an excellent light reflectance and wire bonding efficiency of the inner part, whereas the gold flash plating contributes to an excellent resistance to corrosion and soldering efficiency of an outer part that is outside the package.
摘要翻译： 通过以大致整体的方式施加镀镍（102），镀钯（103）和镀金（104）的方式形成用于半导体器件的引线框架（100），以引导诸如铜薄板的框架体（101） 并且进一步将银电镀（105）选择性地施加到将被半导体器件的封装封装的内部部分的一部分。 引线框架（100）还可以包括封装的基部。 镀银有助于内部部件的良好的光反射率和引线接合效率，而闪镀电镀有助于在封装外部的外部部件具有优异的耐腐蚀性和焊接效率。
-
公开(公告)号：US08541871B2
公开(公告)日：2013-09-24
申请号：US12716938
申请日：2010-03-03
IPC分类号： H01L23/495
CPC分类号： H01L33/62 , H01L23/49582 , H01L24/48 , H01L2224/48091 , H01L2224/48247 , H01L2224/85439 , H01L2224/85464 , H01L2924/00014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2224/45099 , H01L2924/00
摘要： A lead frame (100) for a semiconductor device is formed by applying nickel plating (102), palladium plating (103), and gold flash plating (104) substantially entirely to lead frame body (101) such as copper thin plate in this order, and further applying silver plating (105) selectively to part of an inner part that is to be enclosed with a package of the semiconductor device. The lead frame (100) may also include a base of the package. The silver plating contributes to an excellent light reflectance and wire bonding efficiency of the inner part, whereas the gold flash plating contributes to an excellent resistance to corrosion and soldering efficiency of an outer part that is outside the package.
摘要翻译： 通过以大致整体的方式施加镀镍（102），镀钯（103）和镀金（104）的方式形成用于半导体器件的引线框架（100），以引导诸如铜薄板的框架体（101） 并且进一步将银电镀（105）选择性地施加到将被半导体器件的封装封装的内部部分的一部分。 引线框架（100）还可以包括封装的基部。 镀银有助于内部部件的良好的光反射率和引线接合效率，而闪镀电镀有助于在封装外部的外部部件具有优异的耐腐蚀性和焊接效率。
-
公开(公告)号：US07692277B2
公开(公告)日：2010-04-06
申请号：US10542419
申请日：2004-01-13
IPC分类号： H01L23/495
CPC分类号： H01L33/62 , H01L23/49582 , H01L24/48 , H01L2224/48091 , H01L2224/48247 , H01L2224/85439 , H01L2224/85464 , H01L2924/00014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2224/45099 , H01L2924/00
摘要： A lead frame (100) for a semiconductor device is formed by applying nickel plating (102), palladium plating (103), and gold flash plating (104) substantially entirely to lead frame body (101) such as copper thin plate in this order, and further applying silver plating (105) selectively to part of an inner part that is to be enclosed with a package of the semiconductor device. The lead frame (100) may also include a base of the package. The silver plating contributes to an excellent light reflectance and wire bonding efficiency of the inner part, whereas the gold flash plating contributes to an excellent resistance to corrosion and soldering efficiency of an outer part that is outside the package.
摘要翻译： 通过以大致整体的方式施加镀镍（102），镀钯（103）和镀金（104）的方式形成用于半导体器件的引线框架（100），以引导诸如铜薄板的框架体（101） 并且进一步将银电镀（105）选择性地施加到将被半导体器件的封装封装的内部部分的一部分。 引线框架（100）还可以包括封装的基部。 镀银有助于内部部件的良好的光反射率和引线接合效率，而闪镀电镀有助于在封装外部的外部部件具有优异的耐腐蚀性和焊接效率。
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.024 秒)
