公开(公告)号：US20100163524A1

公开(公告)日：2010-07-01

申请号：US12635815

申请日：2009-12-11

申请人： Hideki ARAI ,  Masayoshi Yajima ,  Kunihiko Suzuki

发明人： Hideki ARAI ,  Masayoshi Yajima ,  Kunihiko Suzuki

IPC分类号： C09J5/02 ,  B44C1/22

CPC分类号： H01L21/68757 ,  C23C16/4581 ,  C30B25/12

摘要： A method for manufacturing a susceptor includes: forming a concave pattern in a surface of a substrate to be processed; applying a SiC paste containing a SiC powder and a sintering agent to the surface of the substrate to be processed to fill the concave pattern to form a SiC coating layer; laminating a SiC substrate on the SiC coating layer; and firing the SiC coating layer to form a SiC layer having at least one convex section on the surface of the SiC substrate.

摘要翻译： 一种感受器的制造方法，其特征在于，在被处理基板的表面形成凹形图案， 将含有SiC粉末和烧结剂的SiC浆料涂布到待加工的基板的表面，以填充凹形图案以形成SiC涂层; 在SiC涂层上层叠SiC衬底; 烧结SiC涂层以形成在SiC衬底的表面上具有至少一个凸部的SiC层。

公开(公告)号：US20090087560A1

公开(公告)日：2009-04-02

申请号：US12237499

申请日：2008-09-25

申请人： Hideki ARAI

发明人： Hideki ARAI

IPC分类号： C23C16/44

CPC分类号： C23C16/4584 ,  C23C16/4585 ,  C30B25/12 ,  H01L21/68735 ,  Y10T117/10

摘要： An epitaxial growth film formation method allowing to adequately prevent the sticking phenomenon spreading over both a wafer and a susceptor when a horizontal disc-like susceptor is used to form an epitaxial growth film is provided. The epitaxial growth film formation method is a method of forming a vapor growth film on the wafer by placing the wafer having a diameter smaller than that of the susceptor approximately horizontally in substantially a center section on the horizontal disc-like susceptor, wherein the vapor growth film is formed on the wafer by bringing a circumferential recess step adjacent to a bottom inside from an edge part of the wafer and a convex step provided on a circumference of an upper surface inside from the edge part of the susceptor into contact.

摘要翻译： 提供了一种外延生长膜形成方法，其允许当使用水平圆盘状基座形成外延生长膜时，能够充分地防止在晶片和基座上分散的粘附现象。 外延生长膜形成方法是通过将直径小于基座的晶片的晶片大致水平放置在水平盘状基座的大致中心部分中而在晶片上形成气相生长膜的方法，其中蒸气生长 通过从晶片的边缘部分接近底部内侧的周向凹陷台阶和从基座的边缘部分的上表面的周边设置的凸台阶接触，在晶片上形成薄膜。

公开(公告)号：US20120071000A1

公开(公告)日：2012-03-22

申请号：US13226036

申请日：2011-09-06

申请人： Hideki ARAI

发明人： Hideki ARAI

IPC分类号： H01L21/31 ,  C23C16/458 ,  C23C16/46 ,  C23C16/455

CPC分类号： H01L21/67109 ,  C23C16/24 ,  C23C16/45591 ,  C23C16/4584 ,  C23C16/4586 ,  H01L21/68785 ,  H01L21/68792

摘要： A manufacturing apparatus for a semiconductor device, comprising: a reactor chamber configured to load a wafer therein; a gas supplying mechanism configured to supply a process gas into the reactor chamber; a gas discharging mechanism configured to discharge a gas from the reactor chamber; a wafer supporting member configured to mount the wafer thereon; a ring configured to mount the wafer supporting member thereon; a rotary drive controlling mechanism configured to connect to the ring for rotating the wafer; a heater arranged in the ring for heating the wafer to a predetermined temperature; an electrode part configured to connect to the heater and including a screw concave portion; and an electrode including a screw portion which is connected to the electrode part via the screw concave portion.

摘要翻译： 一种用于半导体器件的制造装置，包括：反应室，其构造成将晶片装入其中; 气体供给机构，其构造成将处理气体供给到所述反应室中; 气体排出机构，其构造成从所述反应室排出气体; 配置成将晶片安装在其上的晶片支撑构件; 配置成将所述晶片支撑构件安装在其上的环; 旋转驱动控制机构，被配置为连接到所述环以旋转晶片; 设置在所述环中用于将所述晶片加热到预定温度的加热器; 电极部，被配置为连接到加热器并且包括螺纹凹部; 以及电极，其包括通过螺纹凹部与电极部连接的螺纹部。

公开(公告)号：US20120254626A1

公开(公告)日：2012-10-04

申请号：US13426921

申请日：2012-03-22

申请人： Hideki ARAI

发明人： Hideki ARAI

IPC分类号： G06F12/14

CPC分类号： G06F21/79

摘要： A storage media device includes a user-data storage section that is capable of storing encrypted user data; a key-information storage section that is capable of storing key information for decrypting the encrypted user data; a key-information deleting section that performs electrical processing for deleting the key information stored by the key-information storage section; a first switch that is manually operated by a user to issue an instruction for operating the key-information deleting section; a battery that supplies power for operating the key-information deleting section; and a display section that displays that the key-information deletion performed by the key-information deleting section is completed.

摘要翻译： 存储介质设备包括能够存储加密的用户数据的用户数据存储部分; 密钥信息存储部，其能够存储用于对加密的用户数据进行解密的密钥信息; 键信息删除部，执行用于删除由密钥信息存储部存储的密钥信息的电子处理; 由用户手动操作以发出用于操作所述密钥信息删除部分的指令的第一交换机; 提供用于操作所述密钥信息删除部的电力的电池; 以及显示部，其显示由密钥信息删除部执行的密钥信息删除完成。

公开(公告)号：US20090080854A1

公开(公告)日：2009-03-26

申请号：US12198369

申请日：2008-08-26

申请人： Hideki ARAI

发明人： Hideki ARAI

IPC分类号： H04N5/93 ,  H04N7/12

CPC分类号： H04N9/8042 ,  G11B27/034 ,  H04N5/84 ,  H04N5/907 ,  H04N19/114 ,  H04N19/61

摘要： An editing apparatus that executes editing processing with an encoded stream as an edit material is disclosed. The apparatus includes: an input means for receiving an operation input for designating the edit material used for editing, an editing effect, and start and end timing of the editing effect; an editing processing unit setting means for setting an editing processing unit of the edit material such that the editing effect at least a part of which until the editing effect ends after starting of the editing effect overlaps is included in one editing processing unit; a minimum encoding section setting means for setting a minimum encoding section; and an after-editing stream creating means for creating a part of an after-editing encoded stream by decoding the edit material, giving the editing effect included in the editing processing unit, and performing encoding on the basis of setting of the minimum encoding section.

摘要翻译： 公开了以编码流作为编辑材料执行编辑处理的编辑装置。 该装置包括：输入装置，用于接收用于指定用于编辑的编辑材料的操作输入，编辑效果以及编辑效果的开始和结束定时; 编辑处理单元设置装置，用于设置编辑材料的编辑处理单元，使得在编辑效果重叠开始之后直到编辑效果结束的至少一部分的编辑效果包括在一个编辑处理单元中; 最小编码部分设置装置，用于设置最小编码部分; 以及后编辑流创建装置，用于通过解码编辑材料来创建编辑后编码流的一部分，给出包括在编辑处理单元中的编辑效果，并且基于最小编码部分的设置来执行编码。