公开(公告)号：US08524103B2

公开(公告)日：2013-09-03

申请号：US12635815

申请日：2009-12-11

申请人： Hideki Arai ,  Masayoshi Yajima ,  Kunihiko Suzuki

发明人： Hideki Arai ,  Masayoshi Yajima ,  Kunihiko Suzuki

IPC分类号： C23F1/00 ,  C03C15/00 ,  C03C25/68 ,  C25F3/00

CPC分类号： H01L21/68757 ,  C23C16/4581 ,  C30B25/12

摘要： A method for manufacturing a susceptor includes: forming a concave pattern in a surface of a substrate to be processed; applying a SiC paste containing a SiC powder and a sintering agent to the surface of the substrate to be processed to fill the concave pattern to form a SiC coating layer; laminating a SiC substrate on the SiC coating layer; and firing the SiC coating layer to form a SiC layer having at least one convex section on the surface of the SiC substrate.

摘要翻译： 一种感受器的制造方法，其特征在于，在被处理基板的表面形成凹形图案， 将含有SiC粉末和烧结剂的SiC浆料涂布到待加工的基板的表面，以填充凹形图案以形成SiC涂层; 在SiC涂层上层叠SiC衬底; 烧结SiC涂层以形成在SiC衬底的表面上具有至少一个凸部的SiC层。

公开(公告)号：US20100163524A1

公开(公告)日：2010-07-01

申请号：US12635815

申请日：2009-12-11

申请人： Hideki ARAI ,  Masayoshi Yajima ,  Kunihiko Suzuki

发明人： Hideki ARAI ,  Masayoshi Yajima ,  Kunihiko Suzuki

IPC分类号： C09J5/02 ,  B44C1/22

CPC分类号： H01L21/68757 ,  C23C16/4581 ,  C30B25/12

摘要： A method for manufacturing a susceptor includes: forming a concave pattern in a surface of a substrate to be processed; applying a SiC paste containing a SiC powder and a sintering agent to the surface of the substrate to be processed to fill the concave pattern to form a SiC coating layer; laminating a SiC substrate on the SiC coating layer; and firing the SiC coating layer to form a SiC layer having at least one convex section on the surface of the SiC substrate.

摘要翻译： 一种感受器的制造方法，其特征在于，在被处理基板的表面形成凹形图案， 将含有SiC粉末和烧结剂的SiC浆料涂布到待加工的基板的表面，以填充凹形图案以形成SiC涂层; 在SiC涂层上层叠SiC衬底; 烧结SiC涂层以形成在SiC衬底的表面上具有至少一个凸部的SiC层。

公开(公告)号：US07967912B2

公开(公告)日：2011-06-28

申请号：US12324578

申请日：2008-11-26

申请人： Masayoshi Yajima ,  Kunihiko Suzuki

发明人： Masayoshi Yajima ,  Kunihiko Suzuki

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/54

CPC分类号： H01L21/67109 ,  H01L21/02381 ,  H01L21/0262 ,  H01L21/67017 ,  H01L21/68785 ,  H01L21/68792

摘要： A manufacturing apparatus for a semiconductor device, includes: a reaction chamber to which a wafer w is loaded; a gas supply port for supplying first process gas including source gas from an upper portion of the reaction chamber; a first rectifying plate for supplying the first process gas onto the wafer in a rectifying state; a first gas exhaust port for exhausting gas from a lower portion of the reaction chamber; a second gas exhaust port for exhausting gas from the upper portion of the reaction chamber; a heater for heating the wafer w; a susceptor for retaining the wafer w; and a rotation drive unit for rotating the wafer w.

摘要翻译： 一种半导体器件的制造装置，包括：加载有晶片w的反应室; 用于从反应室的上部供给包括源气体的第一处理气体的气体供给口; 第一整流板，用于在整流状态下将第一处理气体供应到晶片上; 用于从反应室的下部排出气体的第一排气口; 用于从反应室的上部排出气体的第二排气口; 用于加热晶片w的加热器; 用于保持晶片w的基座; 以及用于旋转晶片w的旋转驱动单元。

公开(公告)号：US20070023869A1

公开(公告)日：2007-02-01

申请号：US11494649

申请日：2006-07-28

申请人： Hiroshi Furutani ,  Yoshikazu Moriyama ,  Seiichi Nakazawa ,  Kunihiko Suzuki ,  Hideki Arai ,  Satoshi Inada

发明人： Hiroshi Furutani ,  Yoshikazu Moriyama ,  Seiichi Nakazawa ,  Kunihiko Suzuki ,  Hideki Arai ,  Satoshi Inada

IPC分类号： H01L23/58

CPC分类号： C23C16/4585 ,  C30B25/12

摘要： A vapor phase deposition apparatus includes a chamber, a support table disposed in the chamber and adapted to support a substrate in the chamber, a first passage connected to the chamber and adapted to supply gas to the chamber to form a film on the substrate, and a second passage connected to the chamber and adapted to discharge the gas from the chamber. The support table includes a first depressed portion and a second depressed portion formed in a bottom part of the first depressed portion, a bottom face of the second depressed portion for supporting the substrate.

摘要翻译： 气相沉积设备包括：室，设置在室中并适于在室中支撑衬底的支撑台，连接到室的第一通道，并适于向腔室供应气体以在衬底上形成膜;以及 第二通道，其连接到所述室并适于从所述室排放气体。 支撑台包括形成在第一凹部的底部中的第一凹部和第二凹部，第二凹部的底面用于支撑基板。

公开(公告)号：US08257499B2

公开(公告)日：2012-09-04

申请号：US12030058

申请日：2008-02-12

申请人： Kunihiko Suzuki ,  Hideki Arai ,  Hironobu Hirata

发明人： Kunihiko Suzuki ,  Hideki Arai ,  Hironobu Hirata

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45589 ,  C23C16/45508 ,  C23C16/45519 ,  C23C16/4585

摘要： A vapor phase deposition apparatus includes: a chamber, a supply unit configured to supply a raw gas into the chamber, a support table disposed in the chamber and configured to support a substrate in the chamber, a rotatable bladed wheel configured to have a plurality of blades, to be arranged to surround the support table, and to discharge the raw gas from above the substrate, and a exhaust unit configured to exhaust the raw gas discharged by the bladed wheel after a vapor phase deposition reaction from the chamber.

摘要翻译： 气相沉积设备包括：腔室，被配置成将原料气体供应到腔室中的供应单元，设置在腔室中并构造成支撑腔室中的基底的支撑台，构造成具有多个 叶片，其被布置成围绕支撑台，并且从基板的上方排出原料气体;以及排气单元，其被配置为在来自所述室的气相沉积反应之后排出由叶轮排出的原料气体。

公开(公告)号：US06461428B2

公开(公告)日：2002-10-08

申请号：US09729669

申请日：2000-12-05

申请人： Shyuji Tobashi ,  Tadashi Ohashi ,  Katsuyuki Iwata ,  Hiroyuki Saito ,  Shinichi Mitani ,  Takaaki Honda ,  Hideki Arai ,  Yoshitaka Murofushi ,  Kunihiko Suzuki ,  Hidenori Takahashi ,  Hideki Ito ,  Hirofumi Katsumata

发明人： Shyuji Tobashi ,  Tadashi Ohashi ,  Katsuyuki Iwata ,  Hiroyuki Saito ,  Shinichi Mitani ,  Takaaki Honda ,  Hideki Arai ,  Yoshitaka Murofushi ,  Kunihiko Suzuki ,  Hidenori Takahashi ,  Hideki Ito ,  Hirofumi Katsumata

IPC分类号： C30B2514

CPC分类号： C23C16/45587 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/52 ,  C30B25/12 ,  C30B25/16 ,  C30B31/14 ,  C30B31/18

摘要： A method of controlling the temperature of a semiconductor substrate for prevention of any cracks from being formed in the semiconductor substrate event though semiconductors having different temperature rise/fall characteristics are fed into a reactor in which each semiconductor substrates is subjected to an oxidation, diffusion, or a chemical vapor deposition process. The temperatures are measured at various points in the semiconductor substrates in the heated reactor; the temperature rise/fall characteristic thereof is determined by computing the rate of temperature rise and the in-plane temperature distribution out of the measured values; a temperature control program adaptable for said temperature rise/fall characteristic is automatically selected out of a plurality of temperature control programs written in advance; the semiconductor substrate is controlled on the basis of the selected temperature control program. Also is provided a susceptor to reduce contamination of the semiconductor substrate with the metal impurities containing gas flow at the time of forming a thin film on the semiconductor substrate, and a gas phase thin film growth apparatus using such susceptor. The susceptor is formed with a gas flow deflector jutting downwardly from the peripheral portion of the reverse side of the susceptor to deflect the gas flow moving upon rotation along the reverse side of the susceptor from the center thereof to the peripheral portion thereof.

摘要翻译： 控制半导体基板的温度的方法，即使在具有不同温度上升/下降特性的半导体的半导体衬底的事件中，也可以将半导体衬底的各个半导体衬底进行氧化，扩散， 或化学气相沉积工艺。 在加热的反应器中的半导体衬底中的各个点测量温度; 其温度上升/下降特性通过计算测量值中的温度升高速率和面内温度分布来确定; 可以从预先书写的多个温度控制程序中自动选择适合于所述温度上升/下降特性的温度控制程序; 基于所选择的温度控制程序来控制半导体衬底。 还提供了一种感受器，用于在半导体衬底上形成薄膜时减少含有气体流的金属杂质的半导体衬底的污染，以及使用这种感受体的气相薄膜生长装置。 基座形成有从基座的相反侧的周边部分向下突出的气流导流器，以使沿基座的相反侧旋转的气流从其中心偏转到其周边部分。

公开(公告)号：US20080193646A1

公开(公告)日：2008-08-14

申请号：US12030058

申请日：2008-02-12

申请人： Kunihiko Suzuki ,  Hideki Arai ,  Hironobu Hirata

发明人： Kunihiko Suzuki ,  Hideki Arai ,  Hironobu Hirata

IPC分类号： C23C16/52

CPC分类号： C23C16/45589 ,  C23C16/45508 ,  C23C16/45519 ,  C23C16/4585

摘要： A vapor phase deposition apparatus includes: a chamber, a supply unit configured to supply a raw gas into the chamber,a support table disposed in the chamber and configured to support a substrate in the chamber, a rotatable bladed wheel configured to have a plurality of blades, to be arranged to surround the support table, and to discharge the raw gas from above the substrate, and a exhaust unit configured to exhaust the raw gas discharged by the bladed wheel after a vapor phase deposition reaction from the chamber.

摘要翻译： 气相沉积设备包括：腔室，被配置成将原料气体供应到腔室中的供应单元，设置在腔室中并构造成支撑腔室中的基底的支撑台，构造成具有多个 叶片，其被布置成围绕支撑台，并且从基板的上方排出原料气体;以及排气单元，其被配置为在来自所述室的气相沉积反应之后排出由叶轮排出的原料气体。

公开(公告)号：US09203044B2

公开(公告)日：2015-12-01

申请号：US13370672

申请日：2012-02-10

申请人： Shunpei Yamazaki ,  Satoshi Seo ,  Nobuharu Ohsawa ,  Satoko Shitagaki ,  Hideko Inoue ,  Hiroshi Kadoma ,  Harue Osaka ,  Kunihiko Suzuki

发明人： Shunpei Yamazaki ,  Satoshi Seo ,  Nobuharu Ohsawa ,  Satoko Shitagaki ,  Hideko Inoue ,  Hiroshi Kadoma ,  Harue Osaka ,  Kunihiko Suzuki

IPC分类号： H01L29/20 ,  H01L21/00 ,  H01L51/50

CPC分类号： H01L51/5016 ,  H01L51/504 ,  H01L2251/5384

摘要： An organic light-emitting element having high efficiency and long lifetime is provided. An organic light-emitting body is provided which includes a host having a high electron-transport property (n-type host), a host having a high hole-transport property (p-type host), and a guest such as an iridium complex and in which the n-type host and the p-type host are located so as to be adjacent to each other. When an electron and a hole are injected to such a light-emitting body, the electron is trapped by the n-type host and the hole is trapped by the p-type host. Then, both the electron and the hole are injected to the guest, and thus the guest is brought into an excited state. In this process, less thermal deactivation occurs and the working rate of the guest is high; thus, highly efficient light emission can be obtained.

摘要翻译： 提供了高效率且寿命长的有机发光元件。 提供一种有机发光体，其包括具有高电子传输性质的主体（n型主体），具有高空穴传输性质的主体（p型主体））和诸如铱络合物的客体 并且其中n型主机和p型主机位于彼此相邻的位置。 当向这种发光体注入电子和空穴时，电子被n型主体捕获，孔被p型主体捕获。 然后，将电子和孔都注入到客体中，从而使客人处于激发状态。 在这个过程中，发生较少的热失活，客人的工作速度很高; 因此，可以获得高效的发光。

公开(公告)号：US09175213B2

公开(公告)日：2015-11-03

申请号：US13419892

申请日：2012-03-14

申请人： Satoshi Seo ,  Satoko Shitagaki ,  Nobuharu Ohsawa ,  Hideko Inoue ,  Kunihiko Suzuki

发明人： Satoshi Seo ,  Satoko Shitagaki ,  Nobuharu Ohsawa ,  Hideko Inoue ,  Kunihiko Suzuki

IPC分类号： H01J1/62 ,  C09K11/06 ,  C07D409/10 ,  H01L51/00 ,  H05B33/14 ,  H01L51/50

CPC分类号： H01L51/5028 ,  C07D409/10 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1029 ,  C09K2211/1044 ,  C09K2211/1088 ,  C09K2211/1092 ,  C09K2211/185 ,  H01L51/0056 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/0085 ,  H01L51/5016 ,  H05B33/14

摘要： A light-emitting element having high external quantum efficiency is provided. A light-emitting element having low drive voltage is provided. Provided is a light-emitting element which includes a light-emitting layer containing a phosphorescent compound, a first organic compound, and a second organic compound between a pair of electrodes. A combination of the first organic compound and the second organic compound forms an exciplex (excited complex). An emission spectrum of the exciplex overlaps with an absorption band located on the longest wavelength side of an absorption spectrum of the phosphorescent compound. A peak wavelength of the emission spectrum of the exciplex is longer than or equal to a peak wavelength of the absorption band located on the longest wavelength side of the absorption spectrum of the phosphorescent compound.

摘要翻译： 提供具有高外部量子效率的发光元件。 提供具有低驱动电压的发光元件。 提供一种发光元件，其包括在一对电极之间包含磷光化合物，第一有机化合物和第二有机化合物的发光层。 第一有机化合物和第二有机化合物的组合形成激元复合物（激发络合物）。 激发子的发射光谱与位于磷光化合物的吸收光谱的最长波长侧的吸收带重叠。 激光复合物的发射光谱的峰值波长长于或等于位于磷光化合物的吸收光谱的最长波长侧的吸收带的峰值波长。

公开(公告)号：US08967350B2

公开(公告)日：2015-03-03

申请号：US13591782

申请日：2012-08-22

申请人： Noriyuki Fujii ,  Hiroshi Takuno ,  Kunihiko Suzuki ,  Yuji Tsuzuki

发明人： Noriyuki Fujii ,  Hiroshi Takuno ,  Kunihiko Suzuki ,  Yuji Tsuzuki

IPC分类号： F16D27/115 ,  F16D27/12 ,  F16D27/00

CPC分类号： F16D27/115 ,  F16D13/52 ,  F16D13/757 ,  F16D27/004 ,  F16D2023/123 ,  F16D2500/5029

摘要： A driving force transmission apparatus includes: a first cam mechanism that converts rotational force from a housing into first cam thrust force used as clutch force of a main clutch when the first cam mechanism is actuated through clutch action of a pilot clutch; and a second cam mechanism that is actuated prior to conversion of the rotational force into the first cam thrust force by the first cam mechanism, and that generates second cam thrust force for reducing an interval between clutch plates of the main clutch. The second cam mechanism includes an input cam member that rotates upon receiving rotational force used as actuating force of the input cam member from a cam actuating driving source, and an output cam member that generates the second cam thrust force between the output cam member and the input cam member and outputs the second cam thrust force.

摘要翻译： 驱动力传递装置包括：第一凸轮机构，当第一凸轮机构通过先导离合器的离合作用致动时，将来自壳体的旋转力转换成用作主离合器的离合器力的第一凸轮推力; 以及第二凸轮机构，其在通过第一凸轮机构将旋转力转换成第一凸轮推力之前被致动，并且产生用于减小主离合器的离合器板之间的间隔的第二凸轮推力。 第二凸轮机构包括输入凸轮构件，该凸轮构件在从凸轮致动驱动源接收到用作输入凸轮构件的致动力的旋转力时旋转;以及输出凸轮构件，其在输出凸轮构件与输出凸轮构件之间产生第二凸轮推力 输入凸轮构件并输出第二凸轮推力。