公开(公告)号：US07262477B2

公开(公告)日：2007-08-28

申请号：US10694903

申请日：2003-10-29

申请人： Hideki Okumura ,  Hitoshi Kobayashi ,  Masanobu Tsuchitani ,  Akihiro Osawa ,  Satoshi Aida ,  Shigeo Kouzuki ,  Masaru Izumisawa

发明人： Hideki Okumura ,  Hitoshi Kobayashi ,  Masanobu Tsuchitani ,  Akihiro Osawa ,  Satoshi Aida ,  Shigeo Kouzuki ,  Masaru Izumisawa

IPC分类号： H01L21/8238 ,  H01L29/00

CPC分类号： H01L21/76224 ,  H01L21/316 ,  H01L21/31695 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/7802

摘要： There is provided a semiconductor device including a semiconductor substrate with a trench, and a particulate insulating layer filling at least a lower portion of the trench and containing insulating particles. The semiconductor device may further include a reflowable dielectric layer covering an upper surface of the particulate insulating layer, the insulating particles being stable at the melting point or the softening point of the reflowable dielectric layer.

摘要翻译： 提供了一种包括具有沟槽的半导体衬底和填充至少沟槽的下部并且包含绝缘颗粒的颗粒绝缘层的半导体器件。 半导体器件还可以包括覆盖颗粒绝缘层的上表面的可回流电介质层，绝缘颗粒在可回流电介质层的熔点或软化点是稳定的。