公开(公告)号：US20090280600A1

公开(公告)日：2009-11-12

申请号：US12504158

申请日：2009-07-16

申请人： Hideo HOSONO ,  Masahiro HIRANO ,  Hiromichi OTA ,  Toshio KAMIYA ,  Kenji NOMURA

发明人： Hideo HOSONO ,  Masahiro HIRANO ,  Hiromichi OTA ,  Toshio KAMIYA ,  Kenji NOMURA

IPC分类号： H01L21/36 ,  C23C14/34

CPC分类号： H01L29/78696 ,  C23C14/0021 ,  C23C14/086 ,  C23C14/28 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693

摘要： The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

摘要翻译： 本发明涉及使用该无定形氧化物的无定形氧化物和薄膜晶体管。 特别地，本发明提供了电子载流子浓度小于1018 / cm3的非晶氧化物，以及使用这种无定形氧化物的薄膜晶体管。 在具有源电极6，漏电极5，栅电极4，栅极绝缘膜3和沟道层2的薄膜晶体管中，使用电子载流子浓度小于1018 / cm3的非晶氧化物 通道层2。

公开(公告)号：US20090278122A1

公开(公告)日：2009-11-12

申请号：US12504116

申请日：2009-07-16

申请人： Hideo HOSONO ,  Masahiro HIRANO ,  Hiromichi OTA ,  Toshio KAMIYA ,  Kenji NOMURA

发明人： Hideo HOSONO ,  Masahiro HIRANO ,  Hiromichi OTA ,  Toshio KAMIYA ,  Kenji NOMURA

IPC分类号： H01L29/26

CPC分类号： H01L29/78696 ,  C23C14/0021 ,  C23C14/086 ,  C23C14/28 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693

摘要： The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

公开(公告)号：US20190172605A1

公开(公告)日：2019-06-06

申请号：US16270354

申请日：2019-02-07

申请人： Hideo HOSONO ,  Yoshitake TODA ,  Katsuro HAYASHI ,  Setsuro ITO ,  Satoru WATANABE ,  Naomichi MIYAKAWA ,  Toshinari WATANABE ,  Kazuhiro ITO

发明人： Hideo HOSONO ,  Yoshitake TODA ,  Katsuro HAYASHI ,  Setsuro ITO ,  Satoru WATANABE ,  Naomichi MIYAKAWA ,  Toshinari WATANABE ,  Kazuhiro ITO

IPC分类号： H01B1/08 ,  C23C14/34 ,  C23C14/35 ,  C23C14/08 ,  C04B35/626 ,  C04B35/44

摘要： Disclosed herein is an amorphous C12A7 electride thin film which has an electron density of greater than or equal to 2.0×1018 cm−3 and less than or equal to 2.3×1021 cm−3, and exhibits a light absorption at a photon energy position of 4.6 eV. Also disclosed herein is an amorphous thin film which is fabricated using a target made of a crystalline C12A7 electride, and containing an electride of an amorphous solid material includig calcium, aluminum, and oxygen, in which an Al/Ca molar ratio of the thin film is 0.5 to 4.7.

公开(公告)号：US20130032778A1

公开(公告)日：2013-02-07

申请号：US13415039

申请日：2012-03-08

申请人： Tomofumi SUSAKI ,  Hideo HOSONO

发明人： Tomofumi SUSAKI ,  Hideo HOSONO

IPC分类号： H01L29/12

CPC分类号： H01J1/312 ,  B82Y10/00

摘要： The SrTiO3 buffer layer is formed by lamination of the Sr2+O2− layer and the Ti4+O24− layer. The surface of the buffer layer is terminated with the Ti4+O24− layer. On the buffer layer, a LaAlO3 thin film layer is formed. The thin film layer includes a La3+O2− layer and an Al3+O24− layer alternately laminated in order on the SrTiO3 buffer layer.

摘要翻译： SrTiO3缓冲层是通过层压Sr2 + O2-层和Ti4 + O24-层而形成的。 缓冲层的表面用Ti4 + O24层终止。 在缓冲层上形成LaAlO 3薄膜层。 薄膜层包括在SrTiO 3缓冲层上依次交替层叠的La3 + O2层和Al3 + O24层。