Varistor formed of bismuth and antimony and method of manufacturing same
    2.
    发明授权
    Varistor formed of bismuth and antimony and method of manufacturing same 失效
    由铋和锑形成的压敏电阻及其制造方法

    公开(公告)号:US5592140A

    公开(公告)日:1997-01-07

    申请号:US313598

    申请日:1994-09-29

    IPC分类号: H01C7/10 H01C7/112

    CPC分类号: H01C7/112

    摘要: The varistor element contains zinc-oxide as a main constituent and at least bismuth and antimony as accessory constituents. The content of bismuth in the form of Bi.sub.2 O.sub.3 is in a range from about 0.1 to 4.0 mol % and the content of antimony in the form of Sb.sub.2 O.sub.3 constitutes a mol-ratio of Sb.sub.2 O.sub.3 /Bi.sub.2 O.sub.3 less than or equal to about 1.0 mol %. These materials are mixed thoroughly and are pressed into a compact. After coating both sides of the compact with Ag or Ag--Pd paste, the compact and its electrodes are sintered simultaneously at a temperature of about 800.degree. C. to 960.degree. C.

    摘要翻译: 可变电阻元件含有氧化锌作为主要成分,至少含有铋和锑作为附加成分。 Bi 2 O 3形式的铋的含量在约0.1〜4.0摩尔%的范围内,Sb 2 O 3形式的锑的含量构成Sb 2 O 3 / Bi 2 O的摩尔比小于或等于约1.0摩尔%。 将这些材料充分混合并压制成小巧。 在用Ag或Ag-Pd糊料涂覆压制成形体的两面之后,将该压块及其电极在约800℃至960℃的温度下同时烧结。

    Zinc oxide varistor and process for the production thereof
    3.
    发明授权
    Zinc oxide varistor and process for the production thereof 失效
    氧化锌变阻器及其生产方法

    公开(公告)号:US5594406A

    公开(公告)日:1997-01-14

    申请号:US122604

    申请日:1993-10-01

    IPC分类号: H01C7/112 H01C7/10

    CPC分类号: H01C7/112 Y10T29/49099

    摘要: A product and process of making such product in which a varistor is formed by diffusing lead borosilicate-type glass, into a surface of a fired or sintered zinc oxide substrate, i.e., "varistor element," during formation of an electrode on the surface of the substrate. Typically, an electrode paste or material, comprising a mixture or lead borosilicate-type glass frit and Ag powder, is applied to the substrate and provides the lead borosilicate-type glass for diffusing into the substrate. The improvement is that the lead borosilicate-type glass frit for the electrode paste or material comprises a mixture of PbO, B.sub.2 O.sub.3, SiO.sub.2 and at least one metal oxide selected from the group consisting of cobalt oxide, magnesium oxide, yttrium oxide, antimony oxide, manganese oxide, tellurium oxide, lanthanum oxide, cerium oxide, praseodium oxide, neodymium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, erbium oxide, thulium oxide, ytterbium oxide and lutetium oxide.

    摘要翻译: PCT No.PCT / JP93 / 00224 Sec。 371日期:1993年10月1日 102(e)日期1993年10月1日PCT提交1993年2月24日PCT公布。 公开号WO93 / 17438 日期1993年9月2日制造这样的产品的方法,其中通过将硼硅酸铅型玻璃扩散到形成火焰或烧结氧化锌衬底的表面中,即形成“变阻器元件” 电极在基板的表面上。 通常,将包含混合物或硼硅酸铅型玻璃料和Ag粉末的电极浆料或材料施加到基底上,并提供用于扩散到基底中的硼硅酸铅型玻璃。 改进之处在于用于电极浆料或材料的硼硅酸铅型玻璃料包括PbO,B 2 O 3,SiO 2和至少一种选自氧化钴,氧化镁,氧化钇,氧化锑, 氧化锰,氧化碲,氧化镧,氧化铈,氧化镨,氧化钕,氧化钐,氧化铕,氧化钆,氧化铽,氧化镝,氧化钬,氧化铒,氧化oxide,氧化镱和氧化镥。