公开(公告)号：US11935674B2

公开(公告)日：2024-03-19

申请号：US17359721

申请日：2021-06-28

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Mikinori Amisawa ,  Masuto Omiya ,  Kouji Hirate ,  Yukihito Yamashita ,  Touichi Makita

IPC: H01C7/112 ,  H01C1/14

CPC classification number: H01C7/112 ,  H01C1/14

Abstract: An object is to provide a laminated varistor excellent in clamping voltage ratio. Laminated varistor includes at least a pair of internal electrodes provided in varistor layer containing ZnO as a main component.
Internal electrode contains Ag as a main component and is made of a metal containing at least one type selected from Pt and Au. The total weight of Pt and Au with respect to the weight of the metal constituting internal electrode is set between 2% and 30% (inclusive). With such a configuration, diffusion of Ag into varistor layer can be prevented, and a laminated varistor excellent in clamping voltage ratio can be obtained.

公开(公告)号：US20240013955A1

公开(公告)日：2024-01-11

申请号：US18252671

申请日：2021-11-16

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Keiji KAWAJIRI ,  Naoki MUTOU ,  Hironori MOTOMITSU ,  Michiya WATANABE ,  Yuji YAMAGISHI ,  Yasuhiro NISHIMURA

IPC: H01C7/102 ,  H01C7/112 ,  H01C1/148 ,  H01C17/28 ,  H01C17/30

CPC classification number: H01C7/102 ,  H01C7/112 ,  H01C1/148 ,  H01C17/28 ,  H01C17/30

Abstract: A multilayer varistor includes a sintered body, a first external electrode, a second external electrode, a first internal electrode, a second internal electrode, and a high-resistivity portion. The first internal electrode is provided inside the sintered body and electrically connected to the first external electrode. The second internal electrode is provided inside the sintered body and electrically connected to the second external electrode. The high-resistivity portion includes: a surface high-resistivity portion provided to cover a surface of the sintered body; and an inner high-resistivity portion extended inward from the surface high-resistivity portion inside the sintered body.

公开(公告)号：US20170221613A1

公开(公告)日：2017-08-03

申请号：US15501118

申请日：2015-03-06

Applicant: Dongguan Littelfuse Electronics, Co., Ltd.

Inventor： Wen Yang ,  Hao Cheng

IPC: H01C7/112 ,  H01C17/02 ,  H01C1/032

CPC classification number: H01C7/112 ,  H01C1/032 ,  H01C7/102 ,  H01C17/02 ,  H01C17/06546 ,  H01C17/06586 ,  H01C17/285

Abstract: In one embodiment a varistor may include a ceramic body. The varistor may further comprise a multilayer coating disposed around the ceramic body. The multilayer coating may include a first layer comprising a phenolic material or a silicone material; and a second layer adjacent the first layer, the second layer comprising a high dielectric strength coating.

公开(公告)号：US09672964B2

公开(公告)日：2017-06-06

申请号：US12894755

申请日：2010-09-30

Applicant: Felix Greuter ,  Michael Hagemeister ,  Oliver Beck ,  Ragnar Osterlund ,  Reto Kessler

Inventor： Felix Greuter ,  Michael Hagemeister ,  Oliver Beck ,  Ragnar Osterlund ,  Reto Kessler

IPC: H01C7/112 ,  C04B35/453 ,  H01B1/08

CPC classification number: H01C7/112 ,  C04B35/453 ,  C04B2235/3262 ,  C04B2235/3267 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/80 ,  C04B2235/81 ,  C04B2235/85 ,  H01B1/08

Abstract: The present invention relates to a varistor material for a surge arrester with target switching field strength ranging from 250 to 400 V/mm comprising ZnO forming a ZnO phase and Bi expressed as Bi2O3 forming an intergranular bismuth oxide phase, said varistor material further comprising a spinel phase, characterized in that the amount of a pyrochlore phase comprised in the varistor material is such, that the ratio of the pyrochlore phase to the spinel phase is less than 0.15:1.

公开(公告)号：US20170104054A1

公开(公告)日：2017-04-13

申请号：US15386256

申请日：2016-12-21

Applicant: International Business Machines Corporation

Inventor： Jeffrey P. Gambino ,  Richard S. Graf ,  Sudeep Mandal

IPC: H01L49/02 ,  H01L21/762 ,  H01L23/522 ,  H01L23/528 ,  H01L23/62 ,  H01C17/12 ,  H01L27/02 ,  H01L29/06 ,  H01C7/10 ,  H01C7/112 ,  H01C17/00 ,  H01C7/12 ,  H01L21/02 ,  H01L23/64

CPC classification number: H01C7/108 ,  H01C7/006 ,  H01C7/1013 ,  H01C7/112 ,  H01C7/12 ,  H01C17/006 ,  H01C17/06553 ,  H01C17/12 ,  H01C17/245 ,  H01C17/288 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/762 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/62 ,  H01L23/647 ,  H01L27/0248 ,  H01L28/20 ,  H01L28/24 ,  H01L29/0649 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

公开(公告)号：US09601244B2

公开(公告)日：2017-03-21

申请号：US14443137

申请日：2012-12-27

Applicant: LITTELFUSE, INC.

Inventor： Shuying Liu

IPC: H01C7/10 ,  H01C7/12 ,  C04B35/453 ,  H01C7/108 ,  H01C7/112 ,  C04B35/626 ,  C04B35/638 ,  H01C17/00

CPC classification number: H01C7/12 ,  C04B35/453 ,  C04B35/62655 ,  C04B35/638 ,  C04B2235/3217 ,  C04B2235/3241 ,  C04B2235/3263 ,  C04B2235/3277 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/3409 ,  C04B2235/6567 ,  H01C7/108 ,  H01C7/112 ,  H01C17/00

Abstract: A varistor may include a varistor ceramic that includes zinc oxide having a molar percent greater than 90 percent and a set of metal oxides, where the set of metal oxides includes Bi2O3 having a molar fraction between 0.2 and 2.5 percent; Co3O4 having a molar fraction between 0.2 and 1.2 percent; Mn3O4 having a molar fraction between 0.05 and 0.5 percent; Cr2O3 having a molar fraction between 0.05 and 0.5 percent; NiO having a molar fraction between 0.5 and 1.5 percent; Sb2O3 oxide having a molar fraction between 0.05 and 1.5 percent; B2O3 having a molar fraction between 0.001 to 0.03 percent; and aluminum in the form of an oxide having a molar fraction between 0.001 and 0.05 percent.

公开(公告)号：US09536732B2

公开(公告)日：2017-01-03

申请号：US14885512

申请日：2015-10-16

Applicant: International Business Machines Corporation

Inventor： Jeffrey P. Gambino ,  Richard S. Graf ,  Sudeep Mandal

IPC: H01L21/02 ,  H01L49/02

CPC classification number: H01C7/108 ,  H01C7/006 ,  H01C7/1013 ,  H01C7/112 ,  H01C7/12 ,  H01C17/006 ,  H01C17/06553 ,  H01C17/12 ,  H01C17/245 ,  H01C17/288 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/762 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/62 ,  H01L23/647 ,  H01L27/0248 ,  H01L28/20 ,  H01L28/24 ,  H01L29/0649 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may consist of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

Abstract translation: 一种使用低温溅射技术制造横向配置的薄膜压敏电阻浪涌保护装置的结构和方法，其不会损坏与正在制造的压敏电阻相邻的IC器件部件。 横向薄膜压敏电阻可以由在第二金属氧化物层和第二金属氧化物层之间的交替区域的连续层组成，所述第二金属氧化物层和第二金属氧化物层之间形成在两个横向隔开的电极之间，使用低温溅射工艺，随后进行低温退

公开(公告)号：US20160254144A1

公开(公告)日：2016-09-01

申请号：US14885512

申请日：2015-10-16

Applicant: International Business Machines Corporation

Inventor： Jeffrey P. Gambino ,  Richard S. Graf ,  Sudeep Mandal

IPC: H01L21/02 ,  H01L49/02

CPC classification number: H01C7/108 ,  H01C7/006 ,  H01C7/1013 ,  H01C7/112 ,  H01C7/12 ,  H01C17/006 ,  H01C17/06553 ,  H01C17/12 ,  H01C17/245 ,  H01C17/288 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/762 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/62 ,  H01L23/647 ,  H01L27/0248 ,  H01L28/20 ,  H01L28/24 ,  H01L29/0649 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may consist of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

Abstract translation: 一种使用低温溅射技术制造横向配置的薄膜压敏电阻浪涌保护装置的结构和方法，其不会损坏与正在制造的压敏电阻相邻的IC器件部件。 横向薄膜压敏电阻可以由在第二金属氧化物层和第二金属氧化物层之间的交替区域的连续层组成，所述第二金属氧化物层和第二金属氧化物层之间形成在两个横向隔开的电极之间，使用低温溅射工艺，随后进行低温退火工艺

公开(公告)号：US09424967B2

公开(公告)日：2016-08-23

申请号：US14235388

申请日：2012-07-13

Applicant: Peter Gröppel ,  Steffen Lang

Inventor： Peter Gröppel ,  Steffen Lang

IPC: H01C7/10 ,  H01C7/108 ,  C08K9/02 ,  H01C7/112 ,  H01B3/10

CPC classification number: H01C7/10 ,  C08K9/02 ,  H01C7/108 ,  H01C7/112

Abstract: A varistor, or voltage-limiting composition has a polymer matrix and a particulate filler containing a partially conductive material applied to an electrically non-conductive carrier material. The carrier material has a lower density than the partially conductive material, so that the settling rate of the filler in the polymer matrix is reduced. The voltage-limiting composition can therefore also be used as a lacquer or for prepreg materials. A body which acts as a varistor may be produced using a composition of this kind by a method that includes annealing. The varistor may be used for surge arresters, in particular in medium-voltage systems, low-voltage systems, cable connections and cable fasteners.

Abstract translation: 变阻器或限压组合物具有聚合物基质和含有部分导电材料的颗粒填料，其应用于不导电的载体材料。 载体材料具有比部分导电材料低的密度，使得填料在聚合物基质中的沉降速率降低。 因此，限压组合物也可以用作漆或预浸料材料。 可以通过包括退火的方法使用这种组合物来制造充当变阻器的体。 压敏电阻可用于避雷器，特别是在中压系统，低压系统，电缆连接和电缆紧固件中。

公开(公告)号：US20150294769A1

公开(公告)日：2015-10-15

申请号：US14443137

申请日：2012-12-27

Applicant: LITTELFUSE, INC.

Inventor： Shuying Liu

IPC: H01C7/12 ,  H01C17/00 ,  C04B35/453

CPC classification number: H01C7/12 ,  C04B35/453 ,  C04B35/62655 ,  C04B35/638 ,  C04B2235/3217 ,  C04B2235/3241 ,  C04B2235/3263 ,  C04B2235/3277 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/3409 ,  C04B2235/6567 ,  H01C7/108 ,  H01C7/112 ,  H01C17/00

Abstract: A varistor may include a varistor ceramic that includes zinc oxide having a molar percent greater than 90 percent and a set of metal oxides, where the set of metal oxides includes Bi2O3 having a molar fraction between 0.2 and 2.5 percent; Co3O4 having a molar fraction between 0.2 and 1.2 percent; Mn3O4 having a molar fraction between 0.05 and 0.5 percent; Cr2O3 having a molar fraction between 0.05 and 0.5 percent; NiO having a molar fraction between 0.5 and 1.5 percent; Sb2O3 oxide having a molar fraction between 0.05 and 1.5 percent; B2O3 having a molar fraction between 0.001 to 0.03 percent; and aluminum in the form of an oxide having a molar fraction between 0.001 and 0.05 percent.

Abstract translation: 变阻器可以包括包含摩尔百分比大于90％的氧化锌和一组金属氧化物的变阻器陶瓷，其中该组金属氧化物包括摩尔分数在0.2和2.5％之间的Bi 2 O 3; Co 3 O 4的摩尔分数为0.2〜1.2％ 摩尔分数为0.05〜0.5％的Mn3O4; 摩尔分数为0.05〜0.5％的Cr 2 O 3; 摩尔分数为0.5〜1.5％的NiO; 摩尔分数为0.05〜1.5％的Sb2O3氧化物; B2O3的摩尔分数为0.001〜0.03％ 铝和氧化物形式的铝，其摩尔分数为0.001至0.05％。