公开(公告)号：US06316106B1

公开(公告)日：2001-11-13

申请号：US09230140

申请日：1999-01-19

申请人： Hideto Takasugi ,  Manabu Tano ,  Takeshi Ishii ,  Shinichi Akai ,  Akira Shirayama ,  Hirohisa Nakashima

发明人： Hideto Takasugi ,  Manabu Tano ,  Takeshi Ishii ,  Shinichi Akai ,  Akira Shirayama ,  Hirohisa Nakashima

IPC分类号： B32B516

CPC分类号： B22D41/46 ,  Y10T428/2982 ,  Y10T428/2991 ,  Y10T428/2993

摘要： A filler sand for a ladle tap hole valve contains 70 to 90 wt % of chromite sand and 10 to 30 wt % of silica sand and is blended externally with 0.05 to 5 wt % of carbon black calculated based on the total amount of the chromite sand and the silica sand; or contains 70 to 90 wt % of chromite sand and 10 to 30 wt % of silica sand, wherein the chromite sand has a particle diameter distribution such that 99% or more of the chromite sand consists of particles having diameters ranging from 150 to 850 &mgr;m and that 95% or more of the chromite sand consists of particles having diameters ranging from 200 to 600 &mgr;m, and the silica sand has a particle diameter distribution such that 95% or more of the silica sand consists of particles having diameters ranging from 150 to 850 &mgr;m and that 80% or more of the silica sand consists of particles having diameters ranging from 200 to 600 &mgr;m.

摘要翻译： 用于钢包排水孔的填料砂含有70-90重量％的铬铁矿砂和10-30重量％的硅砂，并与外部混合0.05至5重量％的基于铬铁矿砂总量计算的炭黑 和硅砂; 或含有70〜90重量％的铬铁矿砂和10〜30重量％的硅砂，其中铬铁矿砂的粒径分布使得99％以上的铬铁矿砂由直径150〜850μm的粒子组成 铬酸盐砂的95％以上由直径为200〜600μm的粒子组成，硅砂的粒径分布为95％以上的硅砂由直径为150〜 850μm，并且80％或更多的硅砂由直径范围为200-600μm的颗粒组成。

公开(公告)号：US06793710B2

公开(公告)日：2004-09-21

申请号：US10183753

申请日：2002-06-27

申请人： Ikuhiro Sumi ,  Yoshiteru Kikuchi ,  Ryo Kawabata ,  Atsushi Watanabe ,  Shinichi Akai ,  Satoshi Kohira

发明人： Ikuhiro Sumi ,  Yoshiteru Kikuchi ,  Ryo Kawabata ,  Atsushi Watanabe ,  Shinichi Akai ,  Satoshi Kohira

IPC分类号： C21C532

CPC分类号： C21C5/4606

摘要： A method for blowing oxygen in a converter uses a top-blown lance having a Laval nozzle installed on its tip. The Laval nozzle has a back pressure of the nozzle Po(kPa) satisfying a formula, Po=FhS/(0.00465·Dt2), with respect to a oxygen-flow-rate FhS(Nm3/hr) per hole of the Laval nozzle determined from the oxygen-flow-rate FS(Nm3/hr) in a high carbon region in a peak of decarburization and a throat diameter Dt(mm). An exit diameter De of the Laval nozzle satisfies the following formula with respect to the back pressure of the nozzle Po(kPa), an ambient pressure Pe(kPa), and the throat diameter Dt(mm): De2≦0.23×Dt2/{(Pe/Po)5/7×[1−(Pe/Po)2/7]1/2}.

摘要翻译： 在转炉中吹氧的方法使用在其尖端上安装有拉瓦尔喷嘴的顶吹喷枪。 拉瓦尔喷嘴具有满足公式Po = FhS /（0.00465.Dt <2>）的喷嘴Po（kPa）的背压，相对于每秒的氧气流量FhS（Nm 3 / hr） 拉伐尔喷嘴的孔由脱碳峰值和喉部直径Dt（mm）的高碳区域的氧气流率FS（Nm 3 / hr）确定。 拉伐尔喷嘴的出口直径De相对于喷嘴的背压Po（kPa），环境压力Pe（kPa）和喉部直径Dt（mm）满足下式：

公开(公告)号：US4645560A

公开(公告)日：1987-02-24

申请号：US644009

申请日：1984-08-24

申请人： Kazuhisa Matsumoto ,  Hiroshi Morishita ,  Shinichi Akai ,  Shintaro Miyazawa

发明人： Kazuhisa Matsumoto ,  Hiroshi Morishita ,  Shinichi Akai ,  Shintaro Miyazawa

IPC分类号： C30B15/14 ,  C30B27/02 ,  C30B29/42 ,  H01L21/208 ,  C30B15/22

CPC分类号： C30B15/14

摘要： A liquid encapsulation Czockralski method for growing a single crystal of a semiconductor compound which comprises: melting a semiconductor compound in the presence of a B.sub.2 O.sub.3 liquid encapsulant to form a two phase liquid; dipping a semiconductor seed crystal into the compound melt covered with the B.sub.2 O.sub.3 encapsulant; growing the crystal from the compound melt by pulling up and rotating the seed crystal; and, cooling the crystal in a cooling zone above a crucible. The cooling zone is maintained at a substantially uniform temperature distribution with a small temperature gradient by using primarily an independently controlled crystal cooling zone heater H3. In addition, an independently controlled melt heater H1 and an independently controlled crystal growing heater H2 are employed. Also, a crystal cooling zone heat shield 11 can be provided to aid in slowly cooling the grown crystal in the substantially uniform temperature distribution. Preferably, a crystal cooling zone heater H3 is employed to control the temperature distribution in the cooling zone. The semiconductor crystals produced by employing the process and apparatus of the invention are substantially crack-free both before and after grinding and cutting. Also the etch pitch density (EPD) of the semiconductor crystal material is significantly lower than conventionally produced material.

摘要翻译： 一种用于生长半导体化合物的单晶的液体封装Czockralski方法，其包括：在B 2 O 3液体密封剂存在下熔融半导体化合物以形成两相液体; 将半导体晶种浸入用B2O3密封剂覆盖的化合物熔体中; 通过拉起和旋转晶种从复合熔体生长晶体; 并且在坩埚上方的冷却区中冷却晶体。 主要使用独立控制的晶体冷却区加热器H3，冷却区以较小的温度梯度保持在基本上均匀的温度分布。 此外，采用独立控制的熔融加热器H1和独立控制的晶体生长加热器H2。 此外，可以提供晶体冷却区隔热板11，以帮助以基本均匀的温度分布缓慢冷却生长的晶体。 优选地，使用晶体冷却区加热器H3来控制冷却区中的温度分布。 通过使用本发明的方法和设备制造的半导体晶体在研磨和切割之前和之后都是基本无裂纹的。 此外，半导体晶体材料的蚀刻间距密度（EPD）显着低于常规生产的材料。