公开(公告)号：US5561308A

公开(公告)日：1996-10-01

申请号：US366776

申请日：1994-12-30

申请人： Hideyuki Kamata ,  Jumpei Kumagai

发明人： Hideyuki Kamata ,  Jumpei Kumagai

IPC分类号： H01L27/10 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/78696 ,  H01L27/10841 ,  H01L27/10864 ,  H01L29/78642 ,  Y10S257/906

摘要： A semiconductor device comprises a semiconductor substrate of a first conductivity type, a first insulation film formed on the semiconductor substrate, a gate electrode and a second insulation film formed in sequence on the first insulation film, a trench being formed to extend through the second insulation film, the gate electrode and the first insulation film to an interior of the semiconductor substrate. A cylindrical gate insulation film is formed on a surface of the gate electrode which is exposed in the trench. A capacitor insulation film is formed on a surface of the semiconductor substrate exposed in the trench. A cylindrical conductive film is formed inside these insulation films. The cylindrical conductive film includes a region doped with an impurity of the first conductivity type and formed on a surface of the gate insulation film, a region doped with an impurity of a second conductivity type and formed on a surface of the second insulation film and a region doped with an impurity of the second conductivity type and formed on a surface of the capacitor insulation film. A conductive column is formed in a region surrounded by the cylindrical conductive film.

摘要翻译： 半导体器件包括第一导电类型的半导体衬底，形成在半导体衬底上的第一绝缘膜，在第一绝缘膜上依次形成的栅电极和第二绝缘膜，形成为延伸穿过第二绝缘层的沟槽 膜，栅电极和第一绝缘膜到半导体衬底的内部。 在暴露在沟槽中的栅电极的表面上形成圆柱形栅极绝缘膜。 在暴露在沟槽中的半导体衬底的表面上形成电容器绝缘膜。 在这些绝缘膜内部形成圆柱状的导电膜。 圆柱形导电膜包括掺杂有第一导电类型的杂质并形成在栅极绝缘膜的表面上的区域，掺杂有第二导电类型的杂质并形成在第二绝缘膜的表面上的区域和 掺杂有第二导电类型的杂质并形成在电容器绝缘膜的表面上的区域。 导电柱形成在由圆柱形导电膜包围的区域中。