摘要:
A terahertz wave generating apparatus includes an excitation light source for outputting an excitation light at a predetermined wavelength, an optical crystal being excited by an irradiation with the excitation light in order to generate a terahertz wave and terahertz wave amplifying means for repeatedly performing an optical parametric amplification for the terahertz wave by use of the excitation light, wherein the terahertz wave amplifying means includes an optical waveguide having the optical crystal serving as a core and a medium serving as a clad whose refractive index is smaller than a refractive index of the optical crystal, and the inputted excitation light is propagated within the optical waveguide with fulfilling a condition for a total reflection.
摘要:
A terahertz wave generation device is provided with an ultra-short pulse laser light source (3) for generating ultra-short pulse laser light at a single repeating frequency and optical fibers (F1 to F5) for respective transmitting and projecting of the ultra-short pulse laser light to an LN crystal (15). Projection units (13) of the optical fibers (F1 to F5) are made parallel to irradiate the ultra-short pulse laser light (L) projected from the projection units (13), respectively, on terahertz transmission line (A) in the LN crystal (15) with sequential delays. The optical lengths of the transmission paths of the optical fibers (F1 to F5) are set longer as the transmission paths go closer to one side of the parallel direction of the projection units (13).
摘要:
A terahertz wave generation device is provided with an ultra-short pulse laser light source (3) for generating ultra-short pulse laser light at a single repeating frequency and optical fibers (F1 to F5) for respective transmitting and projecting of the ultra-short pulse laser light to an LN crystal (15). Projection units (13) of the optical fibers (F1 to F5) are made parallel to irradiate the ultra-short pulse laser light (L) projected from the projection units (13), respectively, on terahertz transmission line (A) in the LN crystal (15) with sequential delays. The optical lengths of the transmission paths of the optical fibers (F1 to F5) are set longer as the transmission paths go closer to one side of the parallel direction of the projection units (13).
摘要:
A reflection-type terahertz spectrometer includes an input optical path through which terahertz waves are propagated, an irradiating mechanism that irradiates a sample with terahertz waves propagated through the input optical path, an output optical path through which terahertz waves exiting from the irradiating mechanism are propagated, and a detector that receives and detects the terahertz waves propagated through the output optical path. The irradiating mechanism has at least one planar interface and a refractive index greater than that of a peripheral region contacting the planar interface and is disposed between the input optical path and the output optical path such that the terahertz waves propagated through the input optical path to be incident on the planar interface undergo total internal reflection at the planar interface, and the sample is disposed in the peripheral region contacting the planar interface of the irradiating mechanism. When the terahertz waves undergo the total internal reflection at the planar interface, the sample is irradiated with evanescent waves scattering from the planar interface to the peripheral region contacting the planar interface, so as to measure a spectrum.
摘要:
A reflection-type terahertz spectrometer includes an input optical path through which terahertz waves are propagated, an irradiating mechanism that irradiates a sample with terahertz waves propagated through the input optical path, an output optical path through which terahertz waves exiting from the irradiating mechanism are propagated, and a detector that receives and detects the terahertz waves propagated through the output optical path. The irradiating mechanism has at least one planar interface and a refractive index greater than that of a peripheral region contacting the planar interface and is disposed between the input optical path and the output optical path such that the terahertz waves propagated through the input optical path to be incident on the planar interface undergo total internal reflection at the planar interface, and the sample is disposed in the peripheral region contacting the planar interface of the irradiating mechanism. When the terahertz waves undergo the total internal reflection at the planar interface, the sample is irradiated with evanescent waves scattering from the planar interface to the peripheral region contacting the planar interface, so as to measure a spectrum.
摘要:
A multi-channeled measuring method for measuring a spectrum of a terahertz pulse includes the steps of a terahertz pulse generating step for generating a terahertz pulse by using an ultrashort pulsed pumping light, a white light generating step for generating a white light pulse by using an ultrashort pulsed probe light, a stretching step for stretching and chirping the white light pulse generated at the white light pulse generating step, an electro-optic modulating step for modulating the chirped white light pulse stretched and chirped at the stretching step in such a manner that the terahertz pulse and the chirped white light pulse irradiate into an electro-optic crystal synchronously, so that the chirped white light pulse is modulated by an electric field signal induced at the electro-optic crystal irradiated by the terahertz pulse, a multi-channeled spectral detecting step for detecting a spectrum of chirped white light pulse modulated at the electro-optic modulating step by a multi-channeled detector, an electric field signal analyzing step for analyzing an electric field of the terahertz pulse irradiated to the electro-optic crystal from the spectrum of the chirped white light pulse detected by the multi-channeled spectrum detecting step, and a Fourier transforming step for transforming the electric field signal analyzed by the electric field signal analyzing step into a frequency spectrum of the terahertz pulse.
摘要:
A terahertz wave-generating semiconductor crystal includes a zincblende-type III-V compound semiconductor crystal that generates terahertz wave pulses upon application of an ultrashort light pulse in the optical communication band serving as a pump beam.
摘要:
A terahertz wave-generating semiconductor crystal includes a zincblende-type III-V compound semiconductor crystal that generates terahertz wave pulses upon application of an ultrashort light pulse in the optical communication band serving as a pump beam.
摘要:
A method for measuring a spectrum of a terahertz pulse includes generating a terahertz pulse using an ultrashort pulsed pumping light, generating a white light pulse using an ultrashort pulsed probe light, stretching and chirping the white light pulse modulating the chirped white light pulse such that the terahertz pulse and the chirped white light pulse irradiate into an electro-optic crystal synchronously, so that the chirped white light pulse is modulated by an electric field signal induced at the electro-optic crystal irradiated by the terahertz pulse, detecting a spectrum of chirped white light pulse modulated at the electro-optic modulating step by a multi-channeled detector, analyzing an electric field of the teraherz pulse irradiated to the electro-optic crystal from the spectrum of the chirped white light pulse detected by the multi-channeled spectrum detecting step, and transforming the analyzed electric field signal into a frequency spectrum of the terahertz pulse.