摘要:
A terahertz wave generation device is provided with an ultra-short pulse laser light source (3) for generating ultra-short pulse laser light at a single repeating frequency and optical fibers (F1 to F5) for respective transmitting and projecting of the ultra-short pulse laser light to an LN crystal (15). Projection units (13) of the optical fibers (F1 to F5) are made parallel to irradiate the ultra-short pulse laser light (L) projected from the projection units (13), respectively, on terahertz transmission line (A) in the LN crystal (15) with sequential delays. The optical lengths of the transmission paths of the optical fibers (F1 to F5) are set longer as the transmission paths go closer to one side of the parallel direction of the projection units (13).
摘要:
A non-contacting type paint film thickness measuring device includes a generating portion for generating a terahertz pulse light, a detecting portion for detecting the terahertz pulse light, a measured wave form in time-series obtaining portion for obtaining a measured wave form indicating an electric field intensity of a terahertz echo pulse light, and an intrinsic wave form in time-series obtaining portion, having an intrinsic electric field spectrum calculating portion and an intrinsic wave form in time-series calculating portion, for calculating an intrinsic wave form in time-series of an object.
摘要:
Noncontact film thickness measurement device includes an ultra short light pulse light source generating a repetitive ultra short light pulse laser, of which wavelength is in an area from visible region to near-infrared region, a light dividing device for dividing the ultra short light pulse laser into a pump light and a probe light, a light retarding device for controlling to retard the time of either one of the pump light and the probe light, a terahertz wave pulse generating device for generating a terahertz wave pulse by inputting the pump light and generating the terahertz wave pulse in a coaxial direction relative to a remaining pump light outputted without being used for generation of the terahertz wave pulse in the pump light, a light incident optical system for inputting the terahertz wave pulse to an object of which film thickness is to be measured, a light receiving optical system for receiving a terahertz echo pulse reflected from the object by inputting the terahertz wave pulse and a detecting device for detecting an electric field amplitude time resolved wave form of a terahertz echo pulse with the probe light.
摘要:
A method for measuring a spectrum of a terahertz pulse includes generating a terahertz pulse using an ultrashort pulsed pumping light, generating a white light pulse using an ultrashort pulsed probe light, stretching and chirping the white light pulse modulating the chirped white light pulse such that the terahertz pulse and the chirped white light pulse irradiate into an electro-optic crystal synchronously, so that the chirped white light pulse is modulated by an electric field signal induced at the electro-optic crystal irradiated by the terahertz pulse, detecting a spectrum of chirped white light pulse modulated at the electro-optic modulating step by a multi-channeled detector, analyzing an electric field of the teraherz pulse irradiated to the electro-optic crystal from the spectrum of the chirped white light pulse detected by the multi-channeled spectrum detecting step, and transforming the analyzed electric field signal into a frequency spectrum of the terahertz pulse.
摘要:
A non-contacting type paint film thickness measuring device includes a paint film thickness measuring unit having a terahertz pulse light generating portion for generating a terahertz pulse light, a first optical system for collimating and focusing an incident terahertz pulse light that is the terahertz pulse light generated by the terahertz pulse light generating portion to an object whose paint film thickness is measured, a second optical system for receiving a terahertz echo pulse that is the incident terahertz pulse light collimated and focused to the object in the first optical system and reflected at the object, a pulse width shortening portion for shortening a pulse width of the terahertz echo pulse, and a detecting portion for detecting electric field amplitude-time resolved waveform of the terahertz echo pulse whose pulse width is shortened by the pulse width shortening portion.
摘要:
A non-contacting type paint film thickness measuring device includes a generating portion for generating a terahertz pulse light, a detecting portion for detecting the terahertz pulse light, a measured wave form in time-series obtaining portion for obtaining a measured wave form indicating an electric field intensity of a terahertz echo pulse light, and an intrinsic wave form in time-series obtaining portion, having an intrinsic electric field spectrum calculating portion and an intrinsic wave form in time-series calculating portion, for calculating an intrinsic wave form in time-series of an object.
摘要:
The coating film inspection apparatus according to one embodiment of the present invention comprises a terahertz-wave generator that generates a terahertz-wave; an irradiation optical system that irradiates, with the terahertz-wave, a sample with a film formed thereon; a terahertz-wave detector that detects a terahertz-wave reflected at the sample; and a control unit that shows an electric field intensity of the detected terahertz-wave in wave form data on a time axis to detect a plurality of peaks from the wave form data, and also calculates film thickness on the basis of time difference between peaks.
摘要:
The coating film inspection apparatus according to one embodiment of the present invention comprises a terahertz-wave generator that generates a terahertz-wave; an irradiation optical system that irradiates, with the terahertz-wave, a sample with a film formed thereon; a terahertz-wave detector that detects a terahertz-wave reflected at the sample; and a control unit that shows an electric field intensity of the detected terahertz-wave in wave form data on a time axis to detect a plurality of peaks from the wave form data, and also calculates film thickness on the basis of time difference between peaks.
摘要:
A method of examining a configuration of a sample includes the step of irradiating a terahertz pulsed light, which possesses a wavelength to transmit through the sample, to at least two different portions of the sample, the step of detecting at least two electric field amplitude-time resolved waveforms of the terahertz pulsed light transmitted through the first and second portions of the object to be examined, and the step of examining the configuration of the sample based upon phase information obtained from the electric field amplitude-time resolved waveforms detected.
摘要:
A method of examining a configuration of a sample includes the step of irradiating a terahertz pulsed light, which possesses a wavelength to transmit through the sample, to at least two different portions of the sample, the step of detecting at least two electric field amplitude-time resolved waveforms of the terahertz pulsed light transmitted through the first and second portions of the object to be examined, and the step of examining the configuration of the sample based upon phase information obtained from the electric field amplitude-time resolved waveforms detected.