公开(公告)号：US20120001178A1

公开(公告)日：2012-01-05

申请号：US12978049

申请日：2010-12-23

申请人： Hiekazu MIYAIRI ,  Shinya Sasagawa ,  Motomu Kurata ,  Asami Tadokoro

发明人： Hiekazu MIYAIRI ,  Shinya Sasagawa ,  Motomu Kurata ,  Asami Tadokoro

IPC分类号： H01L29/786

CPC分类号： H01L29/78609 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78669 ,  H01L29/78678

摘要： A thin film transistor with favorable electric characteristics is provided. The thin film transistor includes a gate electrode, a gate insulating layer, a semiconductor layer which includes a microcrystalline semiconductor region and an amorphous semiconductor region, an impurity semiconductor layer, a wiring, a first oxide region provided between the microcrystalline semiconductor region and the wiring, and a second oxide region provided between the amorphous semiconductor region and the wiring. wherein a line tangent to the highest inclination of an oxygen profile in the first oxide region (m1) and a line tangent to the highest inclination of an oxygen profile in the second oxide region (m2) satisfy a relation of 1

摘要翻译： 提供具有良好电特性的薄膜晶体管。 薄膜晶体管包括栅电极，栅极绝缘层，包括微晶半导体区域和非晶半导体区域的半导体层，杂质半导体层，布线，设置在微晶半导体区域和布线之间的第一氧化物区域 以及设置在非晶半导体区域和布线之间的第二氧化物区域。 其特征在于，与所述第一氧化物区域（m1）中的氧分布的最高倾斜度相切的行和与所述第二氧化物区域（m2）中的氧气剖面的最高倾斜度相切的直线满足1