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公开(公告)号：US06929970B2
公开(公告)日：2005-08-16
申请号：US10659982
申请日：2003-09-11
CPC分类号： H01G9/2059 , H01G9/2031 , Y02E10/542
摘要： A process for preparing a layer of a nano-porous metal oxide semiconductor comprising the steps of: (i) providing metal oxide semiconductor nano-particles prepared by a wet precipitation process, (ii) heating said nano-particles at a temperature in the range of 250 to 600° C., (iii) preparing a dispersion of said heat-treated nano-particles from step (ii), (iv) applying said dispersion prepared in step (iii) to a support to produce a coating; and (v) subjecting said coating to a pressure in the range of 100 to 1000 bar at a temperature below 250° C.; a layer of a nano-porous metal oxide semiconductor obtained by this process; and a photovoltaic device comprising a layer of a nano-porous metal oxide semiconductor obtained by this process.
摘要翻译： 一种制备纳米多孔金属氧化物半导体层的方法，包括以下步骤：（i）提供通过湿沉淀法制备的金属氧化物半导体纳米颗粒，（ii）在该范围内的温度下加热所述纳米颗粒 （iii）制备来自步骤（ii）的所述经热处理的纳米颗粒的分散体，（iv）将步骤（iii）中制备的所述分散体施加到载体上以产生涂层; 和（v）在低于250℃的温度下对所述涂层进行100-1000巴范围内的压力; 通过该方法获得的纳米多孔金属氧化物半导体层; 以及包括通过该方法获得的纳米多孔金属氧化物半导体层的光伏器件。
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公开(公告)号：US20050016577A1
公开(公告)日：2005-01-27
申请号：US10659982
申请日：2003-09-11
CPC分类号： H01G9/2059 , H01G9/2031 , Y02E10/542
摘要： A process for preparing a layer of a nano-porous metal oxide semiconductor comprising the steps of: (i) providing metal oxide semiconductor nano-particles prepared by a wet precipitation process, (ii) heating said nano-particles at a temperature in the range of 250 to 600° C., (iii) preparing a dispersion of said heat-treated nano-particles from step (ii), (iv) applying said dispersion prepared in step (iii) to a support to produce a coating; and (v) subjecting said coating to a pressure in the range of 100 to 1000 bar at a temperature below 250° C.; a layer of a nano-porous metal oxide semiconductor obtained by this process; and a photovoltaic device comprising a layer of a nano-porous metal oxide semiconductor obtained by this process.
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公开(公告)号：US08349642B2
公开(公告)日：2013-01-08
申请号：US12936187
申请日：2009-04-06
CPC分类号： C23C14/086 , C23C8/36 , C23C14/5826 , H01L31/1884 , Y02E10/50
摘要： The invention relates to a method for treating a metal oxide layer deposited on a substrate. The method comprises the step of applying a substantially atmospheric plasma process at a relatively low temperature. Preferably, the temperature during the plasma process is lower than approximately 180° C. Further, the atmospheric plasma process can be applied in a plasma chamber comprising H2 gas and He gas.
摘要翻译： 本发明涉及一种处理沉积在基底上的金属氧化物层的方法。 该方法包括在较低温度下施加基本上大气中的等离子体工艺的步骤。 优选地，等离子体工艺期间的温度低于约180℃。此外，大气等离子体工艺可以施加在包括H 2气体和He气体的等离子体室中。
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公开(公告)号：US20110104885A1
公开(公告)日：2011-05-05
申请号：US12936187
申请日：2009-04-06
IPC分类号： H01L21/283
CPC分类号： C23C14/086 , C23C8/36 , C23C14/5826 , H01L31/1884 , Y02E10/50
摘要： The invention relates to a method for treating a metal oxide layer deposited on a substrate. The method comprises the step of applying a substantially atmospheric plasma process at a relatively low temperature. Preferably, the temperature during the plasma process is lower than approximately 180° C. Further, the atmospheric plasma process can be applied in a plasma chamber comprising H2 gas and He gas.
摘要翻译： 本发明涉及一种处理沉积在基底上的金属氧化物层的方法。 该方法包括在较低温度下施加基本上大气中的等离子体工艺的步骤。 优选地，等离子体工艺期间的温度低于约180℃。此外，大气等离子体工艺可以施加在包括H 2气体和He气体的等离子体室中。
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公开(公告)号：US09297077B2
公开(公告)日：2016-03-29
申请号：US13577922
申请日：2011-02-11
IPC分类号： C23C16/455 , C23C16/458 , C23C16/54 , H01L21/677
CPC分类号： C23C16/45544 , C23C16/45551 , C23C16/45563 , C23C16/45589 , C23C16/458 , C23C16/52 , C23C16/545 , H01L21/67784
摘要： Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.
摘要翻译： 在基板上沉积原子层的方法。 该方法包括从可以是可旋转滚筒的一部分的沉积头的前体气体供应源供应前体气体。 前体气体从前体气体供应源朝向基底提供。 该方法还包括通过沿着衬底旋转沉积头来移动前体气体源，衬底又沿旋转鼓移动。
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公开(公告)号：US20130064977A1
公开(公告)日：2013-03-14
申请号：US13577922
申请日：2011-02-11
IPC分类号： C23C16/455 , C23C16/458
CPC分类号： C23C16/45544 , C23C16/45551 , C23C16/45563 , C23C16/45589 , C23C16/458 , C23C16/52 , C23C16/545 , H01L21/67784
摘要： Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.
摘要翻译： 在基板上沉积原子层的方法。 该方法包括从可以是可旋转滚筒的一部分的沉积头的前体气体供应源供应前体气体。 前体气体从前体气体供应源朝向基底提供。 该方法还包括通过沿着衬底旋转沉积头来移动前体气体源，衬底又沿旋转鼓移动。
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