公开(公告)号：US20240352581A1

公开(公告)日：2024-10-24

申请号：US18755892

申请日：2024-06-27

Applicant: NEXUSBE CO., LTD

Inventor： Hag Young CHOI ,  Dong Won KIM ,  Sang Hun KIM ,  Keun Sik KIM

IPC: C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4408 ,  C23C16/45551 ,  C23C16/45561 ,  C23C16/45589

Abstract: An atomic layer depositing apparatus includes: a gas supply assembly configured to supply a source gas, a reaction gas, and a purge gas; and a substrate transfer module disposed on a lower side of the gas supply assembly, configured to move linearly, and having an upper side on which the substrate is seated. The gas supply assembly includes: a purge gas supply module connected to a purge gas supply line in which the purge gas flows, a reaction gas supply module connected to a reaction gas supply line in which the reaction gas flows, a source gas supply module configured to selectively communicate with any one of the purge gas supply line and a source gas supply line in which the source gas flows, a pumping module disposed among the purge gas supply module, the reaction gas supply module, and the source gas supply module.

公开(公告)号：US12014922B2

公开(公告)日：2024-06-18

申请号：US17592091

申请日：2022-02-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Tsai-Fu Hsiao ,  Kuang-Yuan Hsu ,  Pei-Ren Jeng ,  Tze-Liang Lee

IPC: C23C16/455 ,  C23C16/54 ,  H01L21/02 ,  H01L21/67 ,  H01L21/677 ,  H01L21/687

CPC classification number: H01L21/0228 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/45551 ,  C23C16/45593 ,  C23C16/54 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/67754 ,  H01L21/6776 ,  H01L21/68764 ,  H01L21/68771 ,  C23C16/45561

Abstract: An apparatus includes a vacuum chamber, a wafer transfer mechanism, a first gas source, a second gas source and a reuse gas pipe. The vacuum chamber is divided into at least three reaction regions including a first reaction region, a second reaction region and a third reaction region. The wafer transfer mechanism is structured to transfer a wafer from the first reaction region to the third reaction region via the second reaction region. The first gas source supplies a first gas to the first reaction region via a first gas pipe, and a second gas source supplies a second gas to the second reaction region via a second gas pipe. The reuse gas pipe is connected between the first reaction region and the third reaction region for supplying an unused first gas collected in the first reaction region to the third reaction region.

公开(公告)号：US20240018653A1

公开(公告)日：2024-01-18

申请号：US18256358

申请日：2021-12-08

Applicant: KALPANA TECHNOLOGIES B.V.

Inventor： Diederick Adrianus Spee

IPC: C23C16/455 ,  C23C16/54 ,  C23C16/458

CPC classification number: C23C16/45551 ,  C23C16/545 ,  C23C16/458 ,  C23C16/45574

Abstract: A system for roll-to-roll deposition is described wherein the system comprises a substrate transport system comprising a static elongated central cylinder for helical transport of a flexible substrate arranged around the cylinder, the cylinder comprising bearing structures arranged in or arranged on the surface of the cylinder for frictionless or low-friction transport of the flexible substrate over the surface of the central cylinder; and, one or more atomic layer deposition ALD deposition heads, an ALD deposition head being configured as a hollow cylinder, the inner surface of a processing head including deposition structures for depositing atomic layers onto the flexible substrate; wherein the inner radius of a deposition head is larger than the outer radius of the central cylinder, the one or more deposition heads being configured to rotate around the central cylinder, wherein the longitudinal axis of a processing head coincides with the longitudinal axis of the central cylinder.

公开(公告)号：US20230407477A1

公开(公告)日：2023-12-21

申请号：US18209659

申请日：2023-06-14

Applicant: ASM IP Holding B.V.

Inventor： Wei Chen Liao

IPC: C23C16/455

CPC classification number: C23C16/45553 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/45536 ,  C23C16/45551

Abstract: A substrate processing apparatus unit is disclosed. Exemplary substrate processing apparatus includes a reaction chamber provided with a reaction space; a susceptor disposed in the reaction chamber and configured to support a substrate, wherein the susceptor is configured to be vertically movable between a process position and a transfer position; a shower plate provided above the susceptor and configured to provide the reaction space with a gas; a gas exhaust unit configured to exhaust the gas from the reaction chamber, comprising: an exhaust duct surrounds the shower plate and provided with a main duct; a first flow control ring that surrounds the susceptor with a space when the susceptor is in the process position; and a second flow control ring surrounds the first flow control ring; wherein a first exhaust channel is formed between the exhaust duct and the first flow control ring; wherein a second exhaust channel is formed between the first flow control ring and the second control ring, and the second exhaust channel is fluidly connected to the main duct and an area below the susceptor.

公开(公告)号：US11837445B2

公开(公告)日：2023-12-05

申请号：US17284438

申请日：2019-11-14

Applicant: JUSUNG ENGINEERING CO., LTD.

Inventor： Chul-Joo Hwang

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/52 ,  H01L21/02

CPC classification number: H01J37/32449 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45574 ,  C23C16/52 ,  H01L21/0228 ,  H01L21/02274 ,  H01J2237/20214 ,  H01J2237/332 ,  H01J2237/3321

Abstract: The present disclosure relates to a substrate processing device and a substrate processing method, the substrate processing device comprising: a chamber; a substrate support part installed in a processing space inside the chamber so as to enable one or more substrate to rotate; a first gas spraying part for spraying a source gas on a first area of the processing space; a second gas spraying part for spraying, on a second area of the processing space, a reactant gas reacting with the source gas on the second area; and a third gas spraying part for spraying, on a third area, a purge gas for dividing the first area and the second area.

公开(公告)号：US20230304152A1

公开(公告)日：2023-09-28

申请号：US18325094

申请日：2023-05-29

Applicant: ADVANCED MATERIALS TECHNOLOGY & ENGINEERING, INC.

Inventor： Jun WAN ,  Haitao LIAO ,  Bin WANG ,  Hui WANG

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45551 ,  C23C16/52

Abstract: Provided are an ALD processing apparatus and a processing method. A reactor of the processing apparatus includes a vacuum chamber and a reaction chamber, the reaction chamber is built in the vacuum chamber and is open at a top, a bottom of the reaction chamber is formed with a gas inlet channel and a gas outlet channel arranged opposite to each other with respect to centerline of the bottom of the reaction chamber in a first direction, a lifting device is provided on the reactor, an output end of the lifting device stretches and contracts vertically and is provided with a sealing cover, which operably seals the top of the reaction chamber, a transporting device is configured to transport a substrate into the vacuum chamber, a grabbing device is provided on the sealing cover, and the grabbing device is configured to grab the substrate transported into the vacuum chamber.

公开(公告)号：US11725278B2

公开(公告)日：2023-08-15

申请号：US16723643

申请日：2019-12-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kun-Mo Lin ,  Yi-Hung Lin ,  Jr-Hung Li ,  Tze-Liang Lee ,  Ting-Gang Chen ,  Chung-Ting Ko

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/509 ,  H01L21/02 ,  H01L21/285

CPC classification number: C23C16/45536 ,  C23C16/45551 ,  C23C16/45565 ,  C23C16/509 ,  H01J37/3244 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32366 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32532 ,  H01J37/32541 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/02274 ,  H01L21/28556

Abstract: A system and method for plasma enhanced deposition processes. An exemplary semiconductor manufacturing system includes a susceptor configured to hold a semiconductor wafer and a sector disposed above the susceptor. The sector includes a first plate and an overlying second plate, operable to form a plasma there between. The first plate includes a plurality of holes extending through the first plate, which vary in at least one of diameter and density from a first region of the first plate to a second region of the first plate.

公开(公告)号：US11702745B2

公开(公告)日：2023-07-18

申请号：US16755712

申请日：2018-10-17

Applicant: Beneq Oy

Inventor： Pekka Soininen ,  Mika Jauhiainen

IPC: C23C16/455 ,  C23C16/54

CPC classification number: C23C16/45578 ,  C23C16/45551 ,  C23C16/45574 ,  C23C16/545

Abstract: The invention relates to a nozzle and nozzle head arranged to supply gas towards a surface of a substrate The nozzle comprises a nozzle output surface via which the gas is supplied towards the surface of the substrate, a nozzle top surface opposite the nozzle output surface, and a nozzle side wall extending between the nozzle output surface and the nozzle top surface. The nozzle further comprises at least one recess provided to the nozzle side wall, the at least one recess extending between the nozzle top surface and the nozzle output surface for providing a gas passage from the nozzle top surface to the nozzle output surface when the nozzle side wall is against a counter surface.

公开(公告)号：US11674225B2

公开(公告)日：2023-06-13

申请号：US15862190

申请日：2018-01-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi Kato ,  Yukio Ohizumi ,  Manabu Honma ,  Takeshi Kobayashi

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  C23C14/50 ,  C23C14/04 ,  H01L21/304 ,  H01L21/67 ,  H01L21/687 ,  C23C14/26 ,  C23C14/22 ,  B05C11/10 ,  C23C16/40

CPC classification number: C23C16/45551 ,  B05C11/1031 ,  C23C14/042 ,  C23C14/228 ,  C23C14/26 ,  C23C14/505 ,  C23C16/402 ,  C23C16/4584 ,  C23C16/45546 ,  C23C16/52 ,  H01L21/304 ,  H01L21/67051 ,  H01L21/67126 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68792

Abstract: There is provided a substrate processing apparatus for performing film formation by supplying a processing gas to a substrate, including: a rotary table provided in a processing container; a mounting stand provided to mount the substrate and configured to be revolved by rotating the rotary table; a processing gas supply part configured to supply a processing gas to a region through which the mounting stand passes by the rotation of the rotary table; a rotation shaft rotatably provided in a portion rotating together with the rotary table and configured to support the mounting stand; a driven gear provided on the rotation shaft; a driving gear provided along an entire circumference of a revolution trajectory of the driven gear to face the revolution trajectory of the driven gear and configured to constitute a magnetic gear mechanism with the driven gear; and a rotating mechanism configured to rotate the driving gear.

公开(公告)号：US11656126B2

公开(公告)日：2023-05-23

申请号：US16685047

申请日：2019-11-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuteru Obara ,  Koji Yoshii ,  Yuki Wada ,  Hitoshi Kikuchi

IPC: C23C16/52 ,  G01J5/00 ,  C23C16/40 ,  C23C16/46 ,  C23C16/458 ,  C23C16/455 ,  H01L21/02 ,  H01L21/687 ,  G05D23/19 ,  H01L21/67 ,  G02B26/12 ,  G01J5/07

CPC classification number: G01J5/0007 ,  C23C16/402 ,  C23C16/4584 ,  C23C16/45551 ,  C23C16/46 ,  C23C16/52 ,  G01J5/07 ,  G02B26/12 ,  G05D23/1931 ,  H01L21/0228 ,  H01L21/02164 ,  H01L21/67248 ,  H01L21/68764 ,  H01L21/68771

Abstract: There is provided a heat treatment apparatus for performing a predetermined film forming process on a substrate by mounting the substrate on a surface of a rotary table installed in a processing vessel and heating the substrate by a heating part while rotating the rotary table. The heat treatment apparatus includes: a first temperature measuring part of a contact-type configured to measure a temperature of the heating part; a second temperature measuring part of a non-contact type configured to measure a temperature of the substrate mounted on the rotary table in a state where the rotary table is being rotated; and a temperature control part configured to control the heating part based on a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part.