摘要:
An exposure apparatus of the present invention is configured to expose a pattern on an original onto a wafer via a projection lens system 110. The exposure apparatus includes a setting leg 105, platens 103, 107, and 109 on which at least one of a reticle stage apparatus 108 configured to hold the original, the projection optical system 110, a wafer stage apparatus 102 configured to hold the wafer, and an interferometer configured to measure a position of the original stage or the wafer stage is mounted, a vibration isolation support mechanism 105 which is provided between the platens 103, 107, and 109 and the setting leg 105 and configured to reduce a vibration, and a filling member 122 formed by hardening a hardening type liquid 113 which is filled between the setting leg 105 and a setting floor 101.
摘要:
An exposure apparatus of the present invention is configured to expose a pattern on an original onto a wafer via a projection lens system 110. The exposure apparatus includes a setting leg 105, platens 103, 107, and 109 on which at least one of a reticle stage apparatus 108 configured to hold the original, the projection optical system 110, a wafer stage apparatus 102 configured to hold the wafer, and an interferometer configured to measure a position of the original stage or the wafer stage is mounted, a vibration isolation support mechanism 105 which is provided between the platens 103, 107, and 109 and the setting leg 105 and configured to reduce a vibration, and a filling member 122 formed by hardening a hardening type liquid 113 which is filled between the setting leg 105 and a setting floor 101.