公开(公告)号：US20120261596A1

公开(公告)日：2012-10-18

申请号：US13370074

申请日：2012-02-09

申请人： Hiroshi KOMORI ,  Yoshifumi UENO ,  Georg SOUMAGNE

发明人： Hiroshi KOMORI ,  Yoshifumi UENO ,  Georg SOUMAGNE

IPC分类号： G21K5/04

CPC分类号： G21K5/00 ,  H05G2/003 ,  H05G2/005 ,  H05G2/008

摘要： An extreme ultra violet light source device of a laser produced plasma type, in which charged particles such as ions emitted from plasma can be efficiently ejected. The extreme ultra violet light source device includes: a target nozzle that supplies a target material; a laser oscillator that applies a laser beam to the target material supplied from the target nozzle to generate plasma; collector optics that collects extreme ultra violet light radiated from the plasma; and a magnetic field forming unit that forms an asymmetric magnetic field in a position where the laser beam is applied to the target material.

摘要翻译： 激光产生等离子体的极紫外光源装置，其中可以有效地喷射从等离子体发射的离子等带电粒子。 极紫外光源装置包括：提供目标材料的目标喷嘴; 激光振荡器，其将激光束施加到从所述目标喷嘴供给的目标材料以产生等离子体; 收集从等离子体辐射的极紫外光的收集器光学元件; 以及在将激光束施加到目标材料的位置形成非对称磁场的磁场形成单元。

公开(公告)号：US20090261242A1

公开(公告)日：2009-10-22

申请号：US12406388

申请日：2009-03-18

申请人： Yoshifumi UENO ,  Osamu WAKABAYASHI ,  Tamotsu ABE ,  Akira SUMITANI ,  Hideo HOSHINO ,  Akira ENDO ,  Georg SOUMAGNE

发明人： Yoshifumi UENO ,  Osamu WAKABAYASHI ,  Tamotsu ABE ,  Akira SUMITANI ,  Hideo HOSHINO ,  Akira ENDO ,  Georg SOUMAGNE

IPC分类号： B01D59/44 ,  H01J49/00

CPC分类号： H05G2/003 ,  G03F7/70033 ,  G03F7/70858 ,  G03F7/70916 ,  G03F7/70983 ,  G21K1/093 ,  G21K2201/00 ,  H05G2/005 ,  H05G2/008

摘要： An ion withdrawal apparatus that withdraws ions emitted from a plasma in an EUV light production apparatus in which a target at an EUV light production point is irradiated with laser light to be made in a plasma state and the target emits EUV light, the ion withdrawal apparatus which includes: a collector mirror that is disposed in a direction opposite to a laser light incidence direction to collect the EUV light and has a hole for the ions to pass therethrough; magnetic line of force production means that produces a magnetic line of force that is parallel or approximately parallel to the laser light incidence direction at or in the vicinity of the EUV light production point; and ion withdrawal means that is disposed on the opposite side of the collector mirror from the EUV light production point and withdraws the ions.

摘要翻译： 一种离子提取装置，其在EUV光产生装置中从在等离子体状态的激光照射EUV光产生点的靶，并且靶射出EUV光的EUV光产生装置中，从等离子体发射的离子， 其包括：收集器反射镜，其设置在与激光入射方向相反的方向上以收集EUV光，并具有用于离子通过的孔; 磁力线产生装置意味着产生在EUV光产生点处或附近平行或近似平行于激光入射方向的磁力线; 以及离开收集反射镜与EUV光产生点相反的一侧的离子提取装置，并且离子退出。

公开(公告)号：US20080087840A1

公开(公告)日：2008-04-17

申请号：US11870020

申请日：2007-10-10

申请人： Yoshifumi UENO ,  Georg SOUMAGNE ,  Akira SUMITANI ,  Osamu WAKABAYASHI

发明人： Yoshifumi UENO ,  Georg SOUMAGNE ,  Akira SUMITANI ,  Osamu WAKABAYASHI

IPC分类号： H05G2/00

CPC分类号： H05G2/001 ,  B82Y10/00 ,  G03F7/70033

摘要： An extreme ultra violet light source apparatus having relatively high output for exposure, in which debris are suppressed to be produced as much as possible in stead of disposing debris that has been once produced. The extreme ultra violet light source apparatus includes: a chamber in which extreme ultra violet light is generated; a target supply unit for supplying solid tin or lithium as a target to a predetermined position within the chamber; a CO2 laser for applying a laser beam based on pulse operation to the target supplied by the target supply unit so as to generate plasma; and a collector mirror having a multilayer film on a reflecting surface thereof, for collecting the extreme ultra violet light radiated from the plasma to output the extreme ultra violet light.

摘要翻译： 具有相对高的曝光输出的极紫外光源装置，其中尽可能多地抑制碎屑被产生以代替已经生产的碎屑。 极紫外光源装置包括：产生极紫外光的室; 用于将固体锡或锂作为目标供应到所述室内的预定位置的目标供应单元; 用于将基于脉冲操作的激光束施加到由目标供给单元提供的目标以产生等离子体的CO 2激光器; 以及在其反射表面上具有多层膜的收集器反射镜，用于收集从等离子体辐射的极紫外光以输出极紫外光。

公开(公告)号：US20120217414A1

公开(公告)日：2012-08-30

申请号：US13465108

申请日：2012-05-07

申请人： Yoshifumi UENO ,  Osamu WAKABAYASHI ,  Tamotsu ABE ,  Akira SUMITANI ,  Hideo HOSHINO ,  Akira ENDO ,  Georg SOUMAGNE

发明人： Yoshifumi UENO ,  Osamu WAKABAYASHI ,  Tamotsu ABE ,  Akira SUMITANI ,  Hideo HOSHINO ,  Akira ENDO ,  Georg SOUMAGNE

IPC分类号： H01J1/50

CPC分类号： H05G2/003 ,  G03F7/70033 ,  G03F7/70858 ,  G03F7/70916 ,  G03F7/70983 ,  G21K1/093 ,  G21K2201/00 ,  H05G2/005 ,  H05G2/008

摘要： An ion withdrawal apparatus that withdraws ions emitted from a plasma in an EUV light production apparatus in which a target at an EUV light production point is irradiated with laser light to be made in a plasma state and the target emits EUV light, the ion withdrawal apparatus which includes: a collector mirror that is disposed in a direction opposite to a laser light incidence direction to collect the EUV light and has a hole for the ions to pass therethrough; magnetic line of force production means that produces a magnetic line of force that is parallel or approximately parallel to the laser light incidence direction at or in the vicinity of the EUV light production point; and ion withdrawal means that is disposed on the opposite side of the collector mirror from the EUV light production point and withdraws the ions.

摘要翻译： 一种离子提取装置，其在EUV光产生装置中从在等离子体状态的激光照射EUV光产生点的靶，并且靶射出EUV光的EUV光产生装置中，从等离子体发射的离子， 其包括：收集器反射镜，其设置在与激光入射方向相反的方向上以收集EUV光，并具有用于离子通过的孔; 磁力线产生装置意味着产生在EUV光产生点处或附近平行或近似平行于激光入射方向的磁力线; 以及离开收集反射镜与EUV光产生点相反的一侧的离子提取装置，并且离子退出。

公开(公告)号：US20100213395A1

公开(公告)日：2010-08-26

申请号：US12646075

申请日：2009-12-23

申请人： Yoshifumi UENO ,  Georg Soumagne ,  Shinji NAGAI ,  Akira ENDO ,  Tatsuya YANAGIDA

发明人： Yoshifumi UENO ,  Georg Soumagne ,  Shinji NAGAI ,  Akira ENDO ,  Tatsuya YANAGIDA

IPC分类号： H05G2/00

CPC分类号： H05G2/003 ,  H05G2/008

摘要： In an extreme ultraviolet light source apparatus generating an extreme ultraviolet light from a plasma generated by irradiating a target, which is a droplet D of molten Sn, with a laser light, and controlling the flow direction of ion generated at the generation of the extreme ultraviolet light by a magnetic field or an electric field, an ion collection cylinder 20 is arranged for collecting the ion, and ion collision surfaces Sa and Sb of the ion collection cylinder 20 are provided with or coated with Si, which is a metal whose sputtering rate with respect to the ion is less than one atom/ion.

摘要翻译： 在极紫外光源装置中，通过用激光照射作为熔融Sn的液滴D而产生的等离子体产生极紫外光，并且控制在产生极紫外光时产生的离子的流动方向 通过磁场或电场照射光，离子收集筒20被布置成用于收集离子，离子收集筒20的离子碰撞表面Sa和Sb设置有或涂覆有Si，溅射速率 相对于离子小于一个原子/离子。

公开(公告)号：US20130075625A1

公开(公告)日：2013-03-28

申请号：US13553621

申请日：2012-07-19

申请人： Takayuki YABU ,  Yoshifumi UENO ,  Junichi FUJIMOTO ,  Yukio WATANABE ,  Toshihiro NISHISAKA

发明人： Takayuki YABU ,  Yoshifumi UENO ,  Junichi FUJIMOTO ,  Yukio WATANABE ,  Toshihiro NISHISAKA

IPC分类号： F23D11/32 ,  G21K5/04

CPC分类号： H05G2/005 ,  H05G2/006 ,  H05G2/008

摘要： A target supply unit includes a nozzle through which a target material is outputted, and a first electrically conductive member having a first opening formed therein and positioned to face the nozzle in a direction into which the target material is outputted through the nozzle. The first electrically conductive member is positioned so that the first opening is located below the nozzle in a gravitational direction. The target supply unit includes a voltage generator which applies a voltage between the target material and the first electrically conductive member.

摘要翻译： 目标供给单元包括：输出目标材料的喷嘴;以及形成有第一开口的第一导电构件，其位于与通过喷嘴输出目标材料的方向相对的喷嘴。 第一导电构件被定位成使得第一开口在重力方向上位于喷嘴下方。 目标供应单元包括在目标材料和第一导电构件之间施加电压的电压发生器。