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公开(公告)号：US07411260B2
公开(公告)日：2008-08-12
申请号：US11774004
申请日：2007-07-06
申请人： Hiroyuki Enomoto , Taro Asai , Shuntaro Machida
发明人： Hiroyuki Enomoto , Taro Asai , Shuntaro Machida
IPC分类号： H01L29/78
CPC分类号： H01L29/84 , G01S15/8925
摘要： A method for improving productivity when manufacturing a semiconductor device. A lower electrode, insulating films, an upper electrode and insulating films are formed on a semiconductor substrate in a sensor region. A cavity is formed between the insulator films above the lower electrode. The lower electrode, insulating film, the cavity and insulating film, and an upper electrode form a variable capacity sensor. The cavity is formed by etching a sacrificial pattern between the insulation films by way of a hole formed in a pair of insulation films. Other than in the above sensor region, a dummy lower electrode and four insulating films are formed on the TEG region on the semiconductor substrate; and a dummy cavity is formed between a pair of insulation films above the lower electrode however no conductive layer on the same layer as the upper electrode is formed on the dummy cavity.
摘要翻译： 一种在制造半导体器件时提高生产率的方法。 在传感器区域中的半导体衬底上形成下电极，绝缘膜，上电极和绝缘膜。 在下电极上方的绝缘体膜之间形成空腔。 下电极，绝缘膜，空腔和绝缘膜以及上电极形成可变容量传感器。 通过在一对绝缘膜中形成的孔蚀刻绝缘膜之间的牺牲图案来形成空腔。 除了上述传感器区域中，在半导体衬底上的TEG区域上形成虚拟下电极和四个绝缘膜; 并且在下电极上方的一对绝缘膜之间形成虚拟空腔，但是在虚拟空腔上不形成与上电极相同的层上的导电层。
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公开(公告)号：US20080079099A1
公开(公告)日：2008-04-03
申请号：US11774004
申请日：2007-07-06
申请人： Hiroyuki Enomoto , Taro Asai , Shuntaro Machida
发明人： Hiroyuki Enomoto , Taro Asai , Shuntaro Machida
IPC分类号： H01L29/84
CPC分类号： H01L29/84 , G01S15/8925
摘要： A method for improving productivity when manufacturing a semiconductor device. A lower electrode, insulating films, an upper electrode and insulating films are formed on a semiconductor substrate in a sensor region. A cavity is formed between the insulator films above the lower electrode. The lower electrode, insulating film, the cavity and insulating film, and an upper electrode form a variable capacity sensor. The cavity is formed by etching a sacrificial pattern between the insulation films by way of a hole formed in a pair of insulation films. Other than in the above sensor region, a dummy lower electrode and four insulating films are formed on the TEG region on the semiconductor substrate; and a dummy cavity is formed between a pair of insulation films above the lower electrode however no conductive layer on the same layer as the upper electrode is formed on the dummy cavity.
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公开(公告)号：US07670858B2
公开(公告)日：2010-03-02
申请号：US12171226
申请日：2008-07-10
申请人： Hiroyuki Enomoto , Taro Asai , Shuntaro Machida
发明人： Hiroyuki Enomoto , Taro Asai , Shuntaro Machida
IPC分类号： H01L29/84
CPC分类号： H01L29/84 , G01S15/8925
摘要： A method for improving productivity when manufacturing a semiconductor device. A lower electrode, insulating films, an upper electrode and insulating films are formed on a semiconductor substrate in a sensor region. A cavity is formed between the insulator films above the lower electrode. The lower electrode, insulating film, the cavity and insulating film, and an upper electrode form a variable capacity sensor. The cavity is formed by etching a sacrificial pattern between the insulation films by way of a hole formed in a pair of insulation films. Other than in the above sensor region, a dummy lower electrode and four insulating films are formed on the TEG region on the semiconductor substrate; and a dummy cavity is formed between a pair of insulation films above the lower electrode however no conductive layer on the same layer as the upper electrode is formed on the dummy cavity.
摘要翻译： 一种在制造半导体器件时提高生产率的方法。 在传感器区域中的半导体衬底上形成下电极，绝缘膜，上电极和绝缘膜。 在下电极上方的绝缘体膜之间形成空腔。 下电极，绝缘膜，空腔和绝缘膜以及上电极形成可变容量传感器。 通过在一对绝缘膜中形成的孔蚀刻绝缘膜之间的牺牲图案来形成空腔。 除了上述传感器区域中，在半导体衬底上的TEG区域上形成虚拟下电极和四个绝缘膜; 并且在下电极上方的一对绝缘膜之间形成虚拟空腔，但是在虚拟空腔上不形成与上电极相同的层上的导电层。
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公开(公告)号：US20080274576A1
公开(公告)日：2008-11-06
申请号：US12171226
申请日：2008-07-10
申请人： Hiroyuki Enomoto , Taro Asai , Shuntaro Machida
发明人： Hiroyuki Enomoto , Taro Asai , Shuntaro Machida
IPC分类号： H01L21/00
CPC分类号： H01L29/84 , G01S15/8925
摘要： A method for improving productivity when manufacturing a semiconductor device. A lower electrode, insulating films, an upper electrode and insulating films are formed on a semiconductor substrate in a sensor region. A cavity is formed between the insulator films above the lower electrode. The lower electrode, insulating film, the cavity and insulating film, and an upper electrode form a variable capacity sensor. The cavity is formed by etching a sacrificial pattern between the insulation films by way of a hole formed in a pair of insulation films. Other than in the above sensor region, a dummy lower electrode and four insulating films are formed on the TEG region on the semiconductor substrate; and a dummy cavity is formed between a pair of insulation films above the lower electrode however no conductive layer on the same layer as the upper electrode is formed on the dummy cavity.
摘要翻译： 一种在制造半导体器件时提高生产率的方法。 在传感器区域中的半导体衬底上形成下电极，绝缘膜，上电极和绝缘膜。 在下电极上方的绝缘体膜之间形成空腔。 下电极，绝缘膜，空腔和绝缘膜以及上电极形成可变容量传感器。 通过在一对绝缘膜中形成的孔蚀刻绝缘膜之间的牺牲图案来形成空腔。 除了上述传感器区域中，在半导体衬底上的TEG区域上形成虚拟下电极和四个绝缘膜; 并且在下电极上方的一对绝缘膜之间形成虚拟空腔，但是在虚拟空腔上不形成与上电极相同的层上的导电层。
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5.发明授权公开(公告)号：US07667374B2
公开(公告)日：2010-02-23
申请号：US11657186
申请日：2007-01-23
IPC分类号： H01L41/00
CPC分类号： B06B1/0292
摘要： In an ultrasonic transducer including a gap between an upper electrode and a lower electrode on a silicon substrate, it is made possible to reduce or adjust warpage of an above-gap membrane vibrated by electrostatic actuation due to internal stress. A fourth insulating film and a fifth insulating film of films positioned above the gap which is a cavity required for transmitting and receiving ultrasonic are respectively a silicon oxide film for compression stress and a silicon nitride film for tensile stress. Therefore, compression stress and tensile stress cancel each other, so that warpage of the above-gap membrane is reduced. An amount of warpage can be adjusted by adjusting a film thickness of the fourth insulating film and a film thickness of the fifth insulating film.
摘要翻译： 在包括硅基板上的上电极和下电极之间的间隙的超声波换能器中，由于内部应力，能够减少或调整由静电驱动振动的上间隙膜的翘曲。 位于间隙上方的膜的第四绝缘膜和第五绝缘膜分别是用于发送和接收超声波所需的腔，分别是用于压缩应力的氧化硅膜和用于拉伸应力的氮化硅膜。 因此，压缩应力和拉伸应力彼此抵消，从而减小了上间隙膜的翘曲。 可以通过调整第四绝缘膜的膜厚度和第五绝缘膜的膜厚来调节翘曲量。
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公开(公告)号：US20080259733A1
公开(公告)日：2008-10-23
申请号：US11867681
申请日：2007-10-04
申请人： Shuntaro Machida , Hiroyuki Enomoto
发明人： Shuntaro Machida , Hiroyuki Enomoto
IPC分类号： B06B1/02
CPC分类号： B06B1/0292
摘要： A technology capable of improving receiver sensitivity and improving insulation withstand voltage in an ultrasonic transducer is provided. An ultrasonic transducer comprises: a lower electrode; an insulator covering the lower electrode; a cavity portion disposed on the insulator so as to overlap with the lower electrode; and an upper electrode disposed so as to overlap with the cavity portion. In this ultrasonic transducer, an insulator is inserted between the upper and lower electrodes in a part not having the cavity portion. By this means, sum total of thickness of insulators between the upper and lower electrodes in a part not having the cavity portion is larger than sum total of thickness of insulators between the upper and lower electrodes in a part having the cavity portion.
摘要翻译： 提供了一种能够提高接收机灵敏度并提高超声波换能器中绝缘耐压的技术。 超声换能器包括：下电极; 覆盖下电极的绝缘体; 空腔部分，设置在所述绝缘体上以与所述下电极重叠; 以及设置成与空腔部分重叠的上电极。 在该超声波换能器中，在不具有空腔部的部分中，在上下电极之间插入绝缘体。 通过这种方式，在不具有空腔部分的部分中的上部和下部电极之间的绝缘体的厚度的总和大于具有空腔部分的部分中的上部和下部电极之间的绝缘体的厚度的总和。
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公开(公告)号：US08294225B2
公开(公告)日：2012-10-23
申请号：US12407414
申请日：2009-03-19
IPC分类号： H01L21/00
CPC分类号： B06B1/0292 , Y10T29/49005
摘要： This invention provides a technique whereby, even if a step is produced by splitting a lower electrode into component elements, resistance increase of an upper electrode, damage to a membrane and decrease of dielectric strength between an upper electrode and the lower electrode, are reduced. In an ultrasonic transducer comprising plural lower electrodes, an insulation film covering the lower electrodes, plural hollow parts formed to overlap the lower electrodes on the insulation film, an insulation film filling the gaps among the hollow parts, an insulation film covering the hollow parts and insulation film, plural upper electrodes formed to overlap the hollow parts on the insulation film and plural interconnections joining them, the surfaces of the hollow parts and insulation film are flattened to the same height.
摘要翻译： 本发明提供一种技术，即使通过将下部电极分割成成分元件而产生台阶，也能够降低上部电极的电阻增加，膜的损伤以及上部电极与下部电极之间的介电强度的降低。 在包括多个下电极的超声波换能器中，覆盖下电极的绝缘膜，形成为与绝缘膜上的下电极重叠的多个中空部，填充中空部之间的间隙的绝缘膜，覆盖中空部的绝缘膜， 绝缘膜，形成为与绝缘膜上的中空部分重叠的多个上电极和连接它们的多个互连，中空部分和绝缘膜的表面被平坦化到相同的高度。
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公开(公告)号：US07512038B2
公开(公告)日：2009-03-31
申请号：US11671040
申请日：2007-02-05
IPC分类号： H04R19/00
CPC分类号： B06B1/0292 , Y10T29/49005
摘要： This invention provides a technique whereby, even if a step is produced by splitting a lower electrode into component elements, resistance increase of an upper electrode, damage to a membrane and decrease of dielectric strength between an upper electrode and the lower electrode, are reduced. In an ultrasonic transducer comprising plural lower electrodes, —an insulation film covering the lower electrodes, —plural hollow parts formed to overlap the lower electrodes on the insulation film, —an insulation film filling the gaps among the hollow parts, an insulation film covering the hollow parts and insulation film, plural upper electrodes formed to overlap the hollow parts on the insulation film and plural interconnections joining them, —the surfaces of the hollow parts and insulation film are flattened to the same height.
摘要翻译： 本发明提供一种技术，即使通过将下部电极分割成成分元件而产生台阶，也能够降低上部电极的电阻增加，膜的损伤以及上部电极与下部电极之间的介电强度的降低。 在包括多个下电极的超声波换能器中， - 覆盖下电极的绝缘膜， - 形成为与绝缘膜上的下电极重叠的 - 中空部分， - 填充中空部分之间的间隙的绝缘膜，覆盖 中空部分和绝缘膜，形成为与绝缘膜上的中空部分重叠的多个上电极和连接它们的多个互连， - 中空部分和绝缘膜的表面被平坦化到相同的高度。
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公开(公告)号：US20080001239A1
公开(公告)日：2008-01-03
申请号：US11767602
申请日：2007-06-25
CPC分类号： G01S7/52079 , G01S7/5208 , H01L28/40
摘要： The performance of a sensor in a semiconductor device can be improved. A plurality of oscillators forming an ultrasonic sensor are arranged on a main surface of a semiconductor chip. A negative-type photosensitive insulating film which protects the oscillators is deposited on an uppermost layer of the semiconductor chip. At the time of exposure for forming an opening in the photosensitive insulating film, the semiconductor chip is divided into a plurality of exposure areas and exposed, and then, the exposure areas are jointed so that the entire area is exposed. At this time, a stitching exposure area is arranged so that a center of the stitching exposure area in a width direction in the joint portion of the adjacent exposure areas is positioned at a center of a line which connects centers of oscillators located above and below the stitching exposure area.
摘要翻译： 可以提高半导体器件中的传感器的性能。 形成超声波传感器的多个振荡器设置在半导体芯片的主表面上。 保护振荡器的负型感光绝缘膜沉积在半导体芯片的最上层。 在曝光用于在感光绝缘膜中形成开口的时刻，将半导体芯片分割为多个曝光区域并曝光，然后将曝光区域接合，使得整个区域被曝光。 此时，布置缝合曝光区域，使得相邻曝光区域的接合部分中的宽度方向上的缝合曝光区域的中心位于连接位于上方和下方的振荡器的中心的线的中心 拼接曝光区域。
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公开(公告)号：US20070052093A1
公开(公告)日：2007-03-08
申请号：US11489612
申请日：2006-07-20
IPC分类号： H01L23/48
CPC分类号： B06B1/0292
摘要： Disclosed is an improved construction of an ultrasonic transducer, wherein a charge is not easily injected into an insulating film even when the bottom of a membrane comes in contact with a lower electrode, and a manufacturing method thereof without using the wafer laminating technique. The ultrasonic transducer includes a lower electrode; a cavity layer formed on the first electrode; an insulating film covering the cavity layer; and an upper electrode formed on the insulating film, wherein, the cavity layer includes projections formed into an insulating film protruded from the cavity layer. In addition, an opening is formed into the upper electrode, and this upper electrode having the opening formed therein is deposited at a position not being superposed with the projections of the insulating film when seen from the top.
摘要翻译： 公开了一种超声换能器的改进结构，其中即使膜的底部与下电极接触，电荷也不容易注入到绝缘膜中，并且其制造方法不使用晶片层压技术。 超声波换能器包括下电极; 形成在所述第一电极上的空腔层; 覆盖空腔层的绝缘膜; 以及形成在绝缘膜上的上电极，其中，所述空腔层包括形成为从所述空腔层突出的绝缘膜的突起。 此外，在上部电极中形成开口，并且其上形成有开口的该上部电极沉积在从顶部观察时不与绝缘膜的突起重叠的位置。
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