Memory Element and Method for Manufacturing Same
    1.
    发明申请
    Memory Element and Method for Manufacturing Same 失效
    记忆元素及其制造方法

    公开(公告)号:US20080259680A1

    公开(公告)日:2008-10-23

    申请号:US11575091

    申请日:2005-11-04

    IPC分类号: G11C11/34 H01S4/00

    摘要: A novel nonvolatile memory element, which can be manufactured by a simple and high yield process by using an organic material and has a high on/off ratio, and a method for manufacturing such nonvolatile memory element. A switching layer (14) made of an electrical insulating radical polymer is provided between an anode layer (12) and a cathode layer (16). Further, a hole injection transport layer (13) is provided between the switching layer (14) and the anode layer (12), and an electron injection transport layer (15), between the switching layer (14) and the cathode layer (16). An intermediate layer is provided between the switching layer and the adjacent layer. The radical polymer is preferably nitroxide radical polymer. The switching layer (14), the hole injection transport layer (13) and the electron injection transport layer (15) are formed by being stacked by a wet process.

    摘要翻译: 一种新颖的非易失性存储元件,其可以通过使用有机材料通过简单且高收率的方法制造并具有高的开/关比率,以及制造这种非易失性存储元件的方法。 在阳极层(12)和阴极层(16)之间设置由绝缘自由基聚合物构成的开关层(14)。 此外,在开关层(14)和阳极层(12)之间设置有空穴注入传输层(13),以及在开关层(14)和阴极层(16)之间的电子注入传输层(15) )。 在切换层和相邻层之间设置中间层。 自由基聚合物优选为氮氧自由基聚合物。 通过湿法堆叠形成开关层(14),空穴注入传输层(13)和电子注入传输层(15)。

    Memory element and method for manufacturing same
    2.
    发明授权
    Memory element and method for manufacturing same 失效
    记忆元件及其制造方法

    公开(公告)号:US07876596B2

    公开(公告)日:2011-01-25

    申请号:US11575091

    申请日:2005-11-04

    IPC分类号: G11C11/00

    摘要: A novel nonvolatile memory element, which can be manufactured by a simple and high yield process by using an organic material and has a high on/off ratio, and a method for manufacturing such nonvolatile memory element. A switching layer (14) made of an electrical insulating radical polymer is provided between an anode layer (12) and a cathode layer (16). Further, a hole injection transport layer (13) is provided between the switching layer (14) and the anode layer (12), and an electron injection transport layer (15), between the switching layer (14) and the cathode layer (16). An intermediate layer is provided between the switching layer and the adjacent layer. The radical polymer is preferably nitroxide radical polymer. The switching layer (14), the hole injection transport layer (13) and the electron injection transport layer (15) are formed by being stacked by a wet process.

    摘要翻译: 一种新颖的非易失性存储元件,其可以通过使用有机材料通过简单且高收率的方法制造并且具有高的开/关比率,以及制造这种非易失性存储元件的方法。 在阳极层(12)和阴极层(16)之间设置由绝缘自由基聚合物构成的开关层(14)。 此外,在开关层(14)和阳极层(12)之间设置有空穴注入传输层(13),以及在开关层(14)和阴极层(16)之间的电子注入传输层(15) )。 在切换层和相邻层之间设置中间层。 自由基聚合物优选为氮氧自由基聚合物。 通过湿法堆叠形成开关层(14),空穴注入传输层(13)和电子注入传输层(15)。

    ORGANIC LIGHT-EMITTING DEVICE
    5.
    发明申请
    ORGANIC LIGHT-EMITTING DEVICE 失效
    有机发光装置

    公开(公告)号:US20110175072A1

    公开(公告)日:2011-07-21

    申请号:US13009065

    申请日:2011-01-19

    IPC分类号: H01L51/54

    CPC分类号: H01L51/5016 H01L51/0085

    摘要: Provided is an organic light-emitting device that shows high luminous efficiency even when driven at a high luminance. More specifically, provided is an organic light-emitting device, including: an anode (transparent electrode layer) and a cathode (metal electrode layer); and an organic compound layer being interposed between the anode and the cathode, and including an emission layer, in which: the emission layer has a host, a first dopant, and a second dopant; the host includes an aromatic hydrocarbon compound; the first dopant includes a phosphorescent iridium complex; and the second dopant includes a compound having two triarylamine structures.

    摘要翻译: 提供了即使以高亮度驱动也显示高发光效率的有机发光装置。 更具体地,提供一种有机发光装置,其包括:阳极(透明电极层)和阴极(金属电极层); 和介于阳极和阴极之间的有机化合物层,并且包括发射层,其中:发射层具有主体,第一掺杂物和第二掺杂剂; 所述主体包括芳族烃化合物; 第一掺杂剂包括磷光铱络合物; 并且第二掺杂剂包括具有两个三芳基胺结构的化合物。