公开(公告)号：US20130135824A1

公开(公告)日：2013-05-30

申请号：US13689299

申请日：2012-11-29

Applicant: Hitachi, Ltd.

Inventor： Yu Harubeppu ,  Takayuki Kushima ,  Yasuhiro Nemoto ,  Keisuke Horiuchi ,  Hisashi Tanie

IPC: H01L23/34 ,  H01L23/42

CPC classification number: H01L23/34 ,  H01L23/42 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The purpose of the present invention is to provide a power semiconductor device which has a light weight, high heat dissipation efficiency, and high rigidity. The power semiconductor device including a base 1, semiconductor circuits 2 which are arranged on the base 1, and a cooling fin 3 which cools each of the semiconductor circuits 2, in which one or more protruding portions 1a, 1b are formed on the base 1, widths of the protruding portions 1a, 1b in a direction parallel to the base 1 surface being longer than a thickness of the base 1, thereby providing power semiconductor devices 100, 200, 300, 400 which have a light weight, high heat dissipation efficiency, and high rigidity.

Abstract translation: 本发明的目的是提供一种重量轻，散热效率高，刚性高的功率半导体装置。 功率半导体器件包括基底1，布置在基底1上的半导体电路2和冷却翅片3，其冷却每个半导体电路2，其中一个或多个突出部分1a，1b形成在基座1上 突起部分1a，1b在平行于基底1表面的方向上的宽度比基体1的厚度长，从而提供功率半导体器件100,200,300,400，其具有重量轻，散热效率高 ，高刚性。

公开(公告)号：US12146816B2

公开(公告)日：2024-11-19

申请号：US18023782

申请日：2021-03-02

Applicant: Hitachi, Ltd.

Inventor： Yu Harubeppu ,  Hisashi Tanie ,  Hiroshi Shintani

IPC: G01M7/06

Abstract: A vibration generation device which can vibrate in only one axial direction is used to simultaneously load a vibration force in a plurality of axial directions onto a test piece, and to make it possible to easily modify the proportion of vibration force in each axial direction. The present invention includes: a vibration generation device connection part 1 which is connected to the vibration generation device and is vibrated in a z-axis direction; a first diaphragm 2 which is connected to the vibration generation device connection part 1 and extends in cantilevered form in an x-axis direction intersecting the z-axis direction; a second diaphragm 3 which is connected to the vicinity of an end of the first diaphragm 2 in the x-axis direction, and which extends in cantilevered form in the z-axis direction and a y-axis direction intersecting the x-axis direction; and a test piece installation part 5 on which the test piece is installed and which receives vibrations via the first diaphragm 2 and the second diaphragm 3 from the vibration generation device connection part 1, wherein at least one of the first diaphragm 2 and the second diaphragm 3 has a length adjustment mechanism 6.

公开(公告)号：US09013877B2

公开(公告)日：2015-04-21

申请号：US13689299

申请日：2012-11-29

Applicant: Hitachi, Ltd.

Inventor： Yu Harubeppu ,  Takayuki Kushima ,  Yasuhiro Nemoto ,  Keisuke Horiuchi ,  Hisashi Tanie

IPC: H05K7/20 ,  H01L23/34 ,  H01L23/42 ,  H01L23/473

CPC classification number: H01L23/34 ,  H01L23/42 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The purpose of the present invention is to provide a power semiconductor device which has a light weight, high heat dissipation efficiency, and high rigidity. The power semiconductor device including a base 1, semiconductor circuits 2 which are arranged on the base 1, and a cooling fin 3 which cools each of the semiconductor circuits 2, in which one or more protruding portions 1a, 1b are formed on the base 1, widths of the protruding portions 1a, 1b in a direction parallel to the base 1 surface being longer than a thickness of the base 1, thereby providing power semiconductor devices 100, 200, 300, 400 which have a light weight, high heat dissipation efficiency, and high rigidity.

Abstract translation: 本发明的目的是提供一种重量轻，散热效率高，刚性高的功率半导体装置。 功率半导体器件包括基底1，布置在基底1上的半导体电路2和冷却翅片3，其冷却每个半导体电路2，其中一个或多个突出部分1a，1b形成在基座1上 突出部分1a，1b在平行于基底1表面的方向上的宽度比基体1的厚度长，从而提供功率半导体器件100,200,300,400，其具有重量轻，散热效率高 ，高刚性。