公开(公告)号：US11961780B2

公开(公告)日：2024-04-16

申请号：US17295713

申请日：2019-11-08

Applicant: HITACHI ASTEMO, LTD.

Inventor： Nobutake Tsuyuno ,  Akira Matsushita ,  Yujiro Kaneko

IPC: H05K7/20 ,  H01L21/48 ,  H01L23/367 ,  H01L23/373

CPC classification number: H01L23/3677 ,  H01L21/4882 ,  H01L23/3735 ,  H05K7/209

Abstract: A semiconductor module includes a semiconductor device that includes first and second fin bases having first and second connecting portions and a resin for sealing the outer peripheral side surfaces of first to fourth conductors, and a flow path forming body connected to the first and second connecting portions of the first and second fin bases. A first elastically deformed portion, which is elastically deformed, is provided such that a distance in a thickness direction between the outer peripheral ends of the first and second connecting portions becomes smaller than a distance in a thickness direction between intermediate portions of the first and second connecting portions. The resin is filled between the first and second connecting portions of the first and second fin bases are filled with the resin therebetween.

公开(公告)号：US11367671B2

公开(公告)日：2022-06-21

申请号：US16768215

申请日：2018-12-11

Applicant: Hitachi Astemo, Ltd.

Inventor： Nobutake Tsuyuno ,  Hiroshi Houzouji

IPC: H01L23/473 ,  H01L23/42

Abstract: An object of the invention is to improve the reliability of a power semiconductor device. The power semiconductor device according to the invention includes a semiconductor element, a first terminal and a second terminal that transmit current to the semiconductor element, a first base and a second base that are disposed to face each other while interposing a part of the first terminal, a part of the second terminal, and the semiconductor element between the first base and the second base, and a sealing material that is provided in a space between the first base and the second base. The second terminal includes an intermediate portion formed in such a way that a distance from the first terminal increases along a direction away from the semiconductor element. The intermediate portion is provided between the first base and the second base and in the sealing material.

公开(公告)号：US11367670B2

公开(公告)日：2022-06-21

申请号：US16767149

申请日：2018-11-05

Applicant: Hitachi Astemo, Ltd.

Inventor： Nobutake Tsuyuno

IPC: H01L23/433 ,  H01L21/56 ,  H01L23/367 ,  H01L23/495 ,  H01L23/00 ,  H01L25/07 ,  H02M7/537

Abstract: An object is to improve the productivity of a power semiconductor device. A power semiconductor device according to the invention includes a circuit portion having a conductor for transmitting a current and a power semiconductor element, a first base portion and a second base portion facing each other with the circuit portion interposed therebetween, and a transfer mold member which is in contact with the conductor and the power semiconductor element and is filled in a space between the first base portion and the second base portion. The first base portion includes a first flat portion that is connected to a peripheral edge of the first base portion, and a first bent portion that connects the first flat portion and another portion of the first base portion and is plastically deformed. The transfer mold member is integrally configured in contact with the first flat portion.

公开(公告)号：US12101915B2

公开(公告)日：2024-09-24

申请号：US17785297

申请日：2020-11-27

Applicant: HITACHI ASTEMO, LTD.

Inventor： Nobutake Tsuyuno ,  Akira Matsushita ,  Toru Kato

IPC: H05K7/20 ,  H02M7/00 ,  H05K5/03

CPC classification number: H05K7/209 ,  H02M7/003 ,  H05K5/03 ,  H05K7/20927

Abstract: The resin material 336 is arranged in a first region 421 surrounded by the fin base 440, the inclined portion 343 of the cover member 340, and the outermost peripheral heat dissipation fins 334 arranged on the outermost peripheral side. Then, the resin material 336 is caused to protrude to the first region 421. That is, the resin material 336 is arranged in the first region 421. In a cross section perpendicular to the refrigerant flow direction (Y direction), a cross-sectional area of the first region 421 is larger than an average cross-sectional area 423 of the adjacent heat dissipation fins 331. Then, a cross-sectional area of a second region 422 formed between the resin material 336 arranged in the first region 421 and the outermost peripheral heat dissipation fin 334 arranged on the outermost peripheral side is smaller than the average cross-sectional area 423 of the heat dissipation fins.