公开(公告)号：US20190128758A1

公开(公告)日：2019-05-02

申请号：US16094001

申请日：2017-04-13

申请人： Hitachi Automotive Systems, Ltd.

发明人： Takuya AOYAGI ,  Takashi NAITOU ,  Tatsuya MIYAKE ,  Mizuki SHIBATA ,  Hiroshi ONUKI ,  Daisuke TERADA ,  Shigenobu KOMATSU

IPC分类号： G01L9/00 ,  H01L23/00

CPC分类号： G01L9/0048 ,  G01D21/00 ,  G01L9/00 ,  H01L24/29 ,  H01L24/30 ,  H01L24/33 ,  H01L24/83 ,  H01L29/84 ,  H01L2224/29188 ,  H01L2224/30505 ,  H01L2224/8389

摘要： Provided is a physical quantity measurement device in which a bonding temperature of a bonding layer is lowered to a temperature not affecting an operation of a semiconductor chip and an insulating property of the semiconductor chip and a base is secured. The physical quantity measurement device includes a base (diaphragm), a semiconductor chip (strain detection element) to measure a physical quantity on the basis of stress acting on the base, and a bonding layer to bond the semiconductor chip to the base. The bonding layer has a first bonding layer bonded to the semiconductor chip, a second bonding layer bonded to the base, and an insulating base material disposed between the first bonding layer and the second bonding layer. The first and second bonding layers and contain glass. A thermal expansion coefficient of the first bonding layer is equal to or lower than a thermal expansion coefficient of the second bonding layer, a softening point of the second bonding layer is equal to or lower than a heat resistant temperature of the semiconductor chip, and a softening point of the first bonding layer is equal to or lower than the softening point of the second bonding layer.