公开(公告)号：US12068312B2

公开(公告)日：2024-08-20

申请号：US17442019

申请日：2020-03-13

申请人： Hitachi Energy Ltd

发明人： Charalampos Papadopoulos ,  Munaf Rahimo ,  Chiara Corvasce

IPC分类号： H01L27/00 ,  H01L27/07 ,  H01L29/06 ,  H01L29/739 ,  H01L29/861 ,  H01L29/78

CPC分类号： H01L27/0727 ,  H01L29/0696 ,  H01L29/7397 ,  H01L29/8611 ,  H01L29/7805 ,  H01L29/8613

摘要： A reverse conducting insulated gate power semiconductor device is provided which comprises a plurality of active unit cells (40) and a pilot diode unit cell (50) comprising a second conductivity type anode region (51) in direct contact with a first main electrode (21) and extending from a first main side (11) to a first depth (d1). Each active unit cell (40) comprises a first conductivity type first source layer (41a) in direct contact with the first main electrode (21), a second conductivity type base layer (42) and a first gate electrode (47a), which is separated from the first source layer (41a) and the second conductivity type base layer (42) by a first gate insulating layer (46a) to form a first field effect transistor structure. A lateral size (w) of the anode region (51) in an orthogonal projection onto a vertical plane perpendicular to the first main side (11) is equal to or less than 1 μm. On a first lateral side surface of the anode region (51) a first insulating layer (52a) is arranged and on an opposing second lateral side surface of the anode region (51) a second insulating layer (52b) is arranged. And a distance between the first insulating layer (52a) and the second insulating layer (52b) is equal to or less than 1 μm, the first insulating layer (52a) extending vertically from the first main side (11) to a second depth (d2), and the second insulating layer (52b) extending vertically from the first main side (11) to a third depth (d3), wherein the first depth (d1) is less than the second depth (d2) and less than the third depth (d3).