公开(公告)号：US20240162295A1

公开(公告)日：2024-05-16

申请号：US18280049

申请日：2022-01-31

申请人： Hitachi Energy Ltd

发明人： Umamaheswara VEMULAPATI ,  Neophytos LOPHITIS ,  Jan VOBECKY ,  Florin UDREA ,  Thomas STIASNY ,  Chiara CORVASCE ,  Marina ANTONIOU

IPC分类号： H01L29/10 ,  H01L29/74 ,  H01L29/745 ,  H01L29/747

CPC分类号： H01L29/102 ,  H01L29/7416 ,  H01L29/7432 ,  H01L29/745 ,  H01L29/747

摘要： A power semiconductor device (1) comprises a gate-commutated thyristor cell (20) including a cathode electrode (2), a cathode region (9) of a first conductivity type, a base layer (8) of a second conductivity type, a drift layer (7) of the first conductivity type, an anode layer (5) of the second conductivity type, an anode electrode (3) and a gate electrode (4). The base layer (8) comprises a cathode base region (81) located between the cathode region (9) and the drift layer (7) and having a first depth (D1), a gate base region (82) located between the gate electrode (4) and the drift layer (7) and having a second depth (D2), and an intermediate base region (83) located between the cathode base region (81) and the gate base region (82) and having two different values of a third depth (D3) being between the first depth (D1) and the second depth (D2).