Power semiconductor module with baseplate and heat dissipating element

    公开(公告)号:US12062591B2

    公开(公告)日:2024-08-13

    申请号:US17159257

    申请日:2021-01-27

    IPC分类号: H01L23/40 H01L23/31

    摘要: A power semiconductor module includes a baseplate that has a first region at a first side located adjacent to an edge of the baseplate and proceeding in a first plane. An encapsulation material covers portions of the baseplate so that the first region of the baseplate is free of the encapsulation material and the baseplate at the edge side adjacent to the first region is at least partly covered by the encapsulation material. The baseplate at its first side is configured for being provided with an electric circuit and the baseplate at its second side is configured for being brought into contact to a heat dissipating element by applying a clamping force with a clamping part to the first region.

    POWER SEMICONDUCTOR MODULE
    2.
    发明公开

    公开(公告)号:US20240355704A1

    公开(公告)日:2024-10-24

    申请号:US18762854

    申请日:2024-07-03

    IPC分类号: H01L23/40 H01L23/31

    摘要: A power semiconductor module includes a baseplate that has a first region at a first side located adjacent to an edge of the baseplate and proceeding in a first plane. An encapsulation material covers portions of the baseplate so that the first region of the baseplate is free of the encapsulation material and the baseplate at the edge side adjacent to the first region is at least partly covered by the encapsulation material. The baseplate at its first side is configured for being provided with an electric circuit and the baseplate at its second side is configured for being brought into contact to a heat dissipating element by applying a clamping force with a clamping part to the first region.