公开(公告)号：US20230230886A1

公开(公告)日：2023-07-20

申请号：US18065698

申请日：2022-12-14

Applicant: Hitachi High-Tech Corporation

Inventor： Kenji YASUI ,  Mayuka OSAKI ,  Hitoshi NAMAI ,  Yuki OJIMA ,  Wataru NAGATOMO ,  Masami IKOTA ,  Maki KIMURA

IPC: H01L21/66 ,  G06T7/50 ,  G06T1/00

CPC classification number: H01L22/12 ,  G06T7/50 ,  G06T1/0007 ,  G06T2207/30148

Abstract: To provide a technique capable of quantitatively grasping a change in three-dimensional shape including a cross-sectional shape of a pattern within a surface of a wafer or between wafers in a non-destructive manner before cross-sectional observation. A processor system of a semiconductor inspection system acquires images captured by an electron microscope (SEM) for a sample (S102), calculates, for a reference region defined on a surface of the sample, first feature data corresponding to each of a plurality of locations in the reference region from the captured image (S103A), calculates a first statistical value based on the first feature data at the plurality of locations (S103B), calculates, for each of a plurality of evaluation regions defined as points or regions on the surface of the sample in correspondence with the reference region, second feature data corresponding to each of one or more locations in the evaluation region from the captured image, as feature data of the same type as the first feature data (S104A), and converts the second feature data using the first statistical value to obtain second feature data after conversion (S105).