公开(公告)号：US20230238210A1

公开(公告)日：2023-07-27

申请号：US18151530

申请日：2023-01-09

Applicant: Hitachi High-Tech Corporation

Inventor： Hiroaki KASAI ,  Kenji YASUI ,  Mayuka OSAKI ,  Maki KIMURA ,  Makoto SUZUKI

IPC: H01J37/22 ,  H01J37/28

CPC classification number: H01J37/222 ,  H01J37/28 ,  H01J2237/2804 ,  H01J2237/24495 ,  H01J2237/24578

Abstract: The invention provides an observation system capable of observing a formation position of a target shape that cannot be directly irradiated with an electron beam. The observation system includes an electron microscope and a computer. The electron microscope is configured to irradiate, with an electron beam, a first surface position on a specimen, which is different from a formation position of a target shape on the specimen, detect predetermined electrons that are scattered in the specimen from the first surface position and that escape from the formation position of the target shape to an outside of the specimen, and output the predetermined electrons as a detection signal. The computer is configured to output one or more values related to the target shape based on the detection signal.

公开(公告)号：US20230230886A1

公开(公告)日：2023-07-20

申请号：US18065698

申请日：2022-12-14

Applicant: Hitachi High-Tech Corporation

Inventor： Kenji YASUI ,  Mayuka OSAKI ,  Hitoshi NAMAI ,  Yuki OJIMA ,  Wataru NAGATOMO ,  Masami IKOTA ,  Maki KIMURA

IPC: H01L21/66 ,  G06T7/50 ,  G06T1/00

CPC classification number: H01L22/12 ,  G06T7/50 ,  G06T1/0007 ,  G06T2207/30148

Abstract: To provide a technique capable of quantitatively grasping a change in three-dimensional shape including a cross-sectional shape of a pattern within a surface of a wafer or between wafers in a non-destructive manner before cross-sectional observation. A processor system of a semiconductor inspection system acquires images captured by an electron microscope (SEM) for a sample (S102), calculates, for a reference region defined on a surface of the sample, first feature data corresponding to each of a plurality of locations in the reference region from the captured image (S103A), calculates a first statistical value based on the first feature data at the plurality of locations (S103B), calculates, for each of a plurality of evaluation regions defined as points or regions on the surface of the sample in correspondence with the reference region, second feature data corresponding to each of one or more locations in the evaluation region from the captured image, as feature data of the same type as the first feature data (S104A), and converts the second feature data using the first statistical value to obtain second feature data after conversion (S105).

公开(公告)号：US20200321189A1

公开(公告)日：2020-10-08

申请号：US16810969

申请日：2020-03-06

Applicant: Hitachi High-Tech Corporation

Inventor： Toshiyuki YOKOSUKA ,  Hirohiko KITSUKI ,  Daisuke BIZEN ,  Makoto SUZUKI ,  Yusuke ABE ,  Kenji YASUI ,  Mayuka OSAKI ,  Hideyuki KAZUMI

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/22

Abstract: The present disclosure provides a pattern cross-sectional shape estimation system which includes a charged particle ray device which includes a scanning deflector that scans a charged particle beam, a detector that detects charged particles, and an angle discriminator that is disposed in a front stage of the detector and discriminates charged particles to be detected, and an arithmetic device that generates a luminance of an image, and calculates a signal waveform of a designated region on the image using the luminance. The arithmetic device generates angle discrimination images using signal electrons at different detection angles, and estimates a side wall shape of a measurement target pattern.