公开(公告)号：US20250003898A1

公开(公告)日：2025-01-02

申请号：US18708615

申请日：2022-01-26

Applicant: Hitachi High-Tech Corporation

Inventor： Wei SUN ,  Naomasa SUZUKI ,  Nobuhiro OKAI ,  Keiichiro HITOMI

IPC: G01N23/2251 ,  G01B15/02 ,  G06T7/00 ,  G06T7/60

Abstract: A foreign object height measurement method including: storing in advance dependence data indicating a dependence of a calculated value of the height of the foreign object calculated from a foreign object image extracted from the charged particle image on an orientation of the foreign object; extracting a measurement target foreign object image, being an image of a measurement target foreign object, from the charged particle image; and outputting a measurement value of a height of the measurement target foreign object along with a warning regarding reliability or measuring the height of the measurement target foreign object from a charged particle image acquired by rotating the sample stage and changing an orientation of the measurement target foreign object detected from the measurement target foreign object image when it is determined that the orientation of the measurement target foreign object does not satisfy an acceptable error range based on the dependence data.

公开(公告)号：US20210225608A1

公开(公告)日：2021-07-22

申请号：US15734367

申请日：2018-06-14

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Takahiro NISHIHATA ,  Mayuka OSAKI ,  Wei SUN ,  Takuma YAMAMOTO

IPC: H01J37/21 ,  H01J37/22 ,  H01J37/244

Abstract: In the present invention, an electro-optical condition generation unit includes: a condition setting unit that sets, as a plurality of electro-optical conditions, a plurality of electro-optical conditions in which the combinations of the aperture angle and the focal-point height for an electron beam are different; an index calculating unit that determines a measurement-performance index in the electro-optical conditions set by the condition setting unit; and a condition deriving unit that derives an electro-optical condition, including an aperture angle and a focal-point height, so that the measurement-performance index determined by the index calculating unit becomes a prescribed value.

公开(公告)号：US20220230842A1

公开(公告)日：2022-07-21

申请号：US17609198

申请日：2019-05-08

Applicant: Hitachi High-Tech Corporation

Inventor： Wei SUN ,  Takuma YAMAMOTO ,  Yasunori GOTO

IPC: H01J37/244 ,  H01J37/28

Abstract: In order to measure a 3D profile of a pattern formed on a sample obtained by stacking a plurality of different materials, for each of materials constituting the pattern, an attenuation coefficient μ indicating a probability of an electron being scattered at a unit distance in the material previously stored, an interface position where different materials are in contact, upper and bottom surface positions of the pattern in a BSE image are extracted, and a depth from the upper surface position to a specified position of the pattern is calculated based on a ratio nIh of a contrast between the specified position and the bottom surface position of the pattern to a contrast between the upper and bottom surface positions of the pattern in the BSE image, an attenuation coefficient of a material at the bottom and specified positions of the pattern.