公开(公告)号：US20220301815A1

公开(公告)日：2022-09-22

申请号：US17634501

申请日：2019-08-28

Applicant: Hitachi High-Tech Corporation

Inventor： Takuma YAMAMOTO

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/26 ,  H01J37/22 ,  G03F7/20

Abstract: In the present invention, an overlay misalignment is quickly measured. An image generation unit generates an image on the basis of signals from a detector. A matching processing unit identifies, by means of matching processing with a template image, the position of an overlay measurement pattern in the image generated by the image generation unit. A line profile generation unit generates, by scanning the overlay pattern, a first line profile pertaining to a secondary electron signal and a second line profile pertaining to a backscattered electron signal. An overlay misalignment measurement unit identifies the position of a first pattern in the overlay measurement pattern from the first line profile, identifies the position of a second pattern in the overlay measurement pattern from the second line profile, and measures an overlay misalignment in a sample on the basis of the position of the first pattern and the position of the second pattern.

公开(公告)号：US20220130638A1

公开(公告)日：2022-04-28

申请号：US17501249

申请日：2021-10-14

Applicant: Hitachi High-Tech Corporation

Inventor： Keiichiro HITOMI ,  Kenji TANIMOTO ,  Yusuke ABE ,  Takuma YAMAMOTO ,  Kei SAKAI ,  Satoru YAMAGUCHI ,  Yasunori GOTO ,  Shuuichirou TAKAHASHI

IPC: H01J37/22 ,  H01J37/147 ,  H01J37/21

Abstract: Provided is a charged particle beam device capable of focusing with high accuracy even when a charged particle beam has a large off-axis amount. The charged particle beam device generates an observation image of a sample by irradiating the sample with a charged particle beam, and includes: a deflection unit that inclines the charged particle beam; a focusing lens that focuses the charged particle beam; an adjustment unit that adjusts a lens strength of the focusing lens based on an evaluation value calculated from the observation image; a storage unit that stores a relationship between a visual field movement amount and the lens strength; and a filter setting unit that calculates the visual field movement amount based on an inclination angle of the charged particle beam and the relationship, and sets an image filter to be superimposed on the observation image based on the calculated visual field movement amount.

公开(公告)号：US20230411111A1

公开(公告)日：2023-12-21

申请号：US18142119

申请日：2023-05-02

Applicant: Hitachi High-Tech Corporation

Inventor： Tetsuro KADOWAKI ,  Takeyoshi OHASHI ,  Takuma YAMAMOTO

IPC: H01J37/21 ,  H01J37/147 ,  H01J37/28

CPC classification number: H01J37/21 ,  H01J37/1478 ,  H01J2237/24578 ,  H01J2237/216 ,  H01J2237/24585 ,  H01J37/28

Abstract: The present disclosure makes it possible to shorten the time required for measurement of a sample and to measure the sample with high throughput. A charged particle beam apparatus includes a storage device that stores a correction value table corresponding to a recipe and a computer system that executes measurement on a plurality of measurement points of a sample according to a measurement order determined in the recipe. The computer system stores, when executing the recipe on a first sample, an adjustment result of one or more imaging conditions in the correction value table at each of a plurality of measurement points of the first sample, and adjusts, when executing the recipe on a second sample different from the first sample, the imaging condition based on the adjustment result of the one or more imaging conditions stored in the correction value table at each of the plurality of measurement points.

公开(公告)号：US20220367147A1

公开(公告)日：2022-11-17

申请号：US17771551

申请日：2020-10-06

Applicant: Hitachi High-Tech Corporation

Inventor： Takahiro NISHIHATA ,  Mayuka OSAKI ,  Yuji TAKAGI ,  Takuma YAMAMOTO ,  Makoto SUZUKI

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/22

Abstract: A charged particle beam device 1 includes: a plurality of detectors 7 for detecting a signal particle 9 emitted from a sample 8 irradiated with a charged particle beam 3 and converting the detected signal particle 9 into an output electrical signal 17; an energy discriminator 14 provided for each detector 7 and configured to discriminate the output electrical signal 17 according to energy of the signal particle 9; a discrimination control block 21 for setting an energy discrimination condition of each of the energy discriminators 14; and an image calculation block 22 for generating an image based on the discriminated electrical signal. The discrimination control block 21 sets energy discrimination conditions different from each other among the plurality of energy discriminators 14.

公开(公告)号：US20250060678A1

公开(公告)日：2025-02-20

申请号：US18937471

申请日：2024-11-05

Applicant: Hitachi High-Tech Corporation

Inventor： Takuma YAMAMOTO ,  Hiroya OHTA ,  Kenji TANIMOTO ,  Yusuke ABE ,  Tomohiro TAMORI ,  Masaaki NOJIRI

IPC: G03F7/00 ,  G01B15/04 ,  G01N23/225 ,  G03F7/20

Abstract: A computation device is provided for measuring the dimensions of patterns formed on a sample based on a signal obtained from a charged particle beam device. The computation device includes a positional deviation amount calculation unit for calculating the amount of positional deviation in a direction parallel to a wafer surface between two patterns having different heights based on an image acquired at a given beam tilt angle; a pattern inclination amount calculation unit for calculating an amount of pattern inclination from the amount of positional deviation using a predetermined relational expression for the amount of positional deviation and the amount of pattern inclination; and a beam tilt control amount calculation unit for controlling the beam tilt angle so as to match the amount of pattern inclination. The pattern measurement device sets the beam tilt angle to a calculated beam tilt angle, reacquires an image and measures the patterns.

公开(公告)号：US20230375338A1

公开(公告)日：2023-11-23

申请号：US18034322

申请日：2020-12-16

Applicant: Hitachi High-Tech Corporation

Inventor： Long ZHANG ,  Takuma YAMAMOTO

IPC: G01B15/04 ,  G01N23/2251

CPC classification number: G01B15/04 ,  G01N23/2251 ,  G01N2223/6116 ,  G01N2223/303 ,  G01N2223/306 ,  G01N2223/633

Abstract: The purpose of the present disclosure is to provide a pattern measurement device that can accurately measure positional deviation between a center of gravity of a top surface of a pattern and a center of gravity of a bottom surface of the pattern, even when an incidence angle of a charged particle beam varies for each irradiation position of the charged particle beam. The pattern measurement device according to the present disclosure acquires an angular deviation amount corresponding to coordinates in a visual field of a pattern in accordance with a relationship between the coordinates in the visual field of the pattern and an angular deviation amount of the charged particle beam, and acquires a positional deviation amount corresponding to the coordinates in the visual field of the pattern in accordance with a relationship between the angular deviation amount and the center of gravity positional deviation amount (see FIG. 3c).

公开(公告)号：US20230032587A1

公开(公告)日：2023-02-02

申请号：US17855888

申请日：2022-07-01

Applicant: Hitachi High-Tech Corporation

Inventor： Takahiro NISHIHATA ,  Yuji TAKAGI ,  Takuma YAMAMOTO ,  Yasunori GOTO ,  Yasutaka TOYODA

IPC: H01J37/22 ,  H01J37/28 ,  G01N23/2251

Abstract: A method, an apparatus, and a program for more appropriately determining a condition for appropriately recognizing a semiconductor pattern are provided. A method for determining a condition related to a captured image of a charged particle beam apparatus including: acquiring, by a processor, a plurality of captured images, each of the captured images being an image generated by irradiating a pattern formed on a wafer with a charged particle beam, and detecting electrons emitted from the pattern, each of the captured images being an image captured according to one or more imaging conditions, the method further including: acquiring teaching information for each of the captured images; acquiring, by the processor, one or more feature determination conditions; calculating, by the processor, a feature for each of the captured images based on each of the feature determination conditions, at least one of the imaging condition and the feature determination condition being plural.

公开(公告)号：US20210055098A1

公开(公告)日：2021-02-25

申请号：US16887885

申请日：2020-05-29

Applicant: Hitachi High-Tech Corporation

Inventor： Takuma YAMAKI ,  Takuma YAMAMOTO ,  Yasunori GOTO ,  Tomohiro TAMORI ,  Kazunari ASAO

IPC: G01B15/00 ,  G01N23/2251 ,  G01N23/203

Abstract: Overlay shift amount measurement with high accuracy becomes possible. A charged particle beam system includes a computer system that measures an overlay shift amount between a first layer of a sample and a second layer lower than the first layer based on output of a detector. The computer system generates first images with respect to the first layer and second images with respect to the second layer based on the output of the detector, generates a first added image by adding the first images by a first added number of images, and generates a second added image by adding the second image by a second added number of images greater than the first added number of images. An overlay shift amount between the first layer and the second layer is measured based on the first added image and the second added image.

公开(公告)号：US20240112322A1

公开(公告)日：2024-04-04

申请号：US18237975

申请日：2023-08-25

Applicant: Hitachi High-Tech Corporation

Inventor： Takahiro NISHIHATA ,  Atsushi MIYAMOTO ,  Takuma YAMAMOTO ,  Yasunori GOTO

IPC: G06T7/00 ,  G06T5/50 ,  G06T7/50 ,  G06T11/20 ,  G06V10/60 ,  G06V10/74

CPC classification number: G06T7/0006 ,  G06T5/50 ,  G06T7/50 ,  G06T11/203 ,  G06V10/60 ,  G06V10/761 ,  G06T2207/10056 ,  G06T2207/20216 ,  G06T2207/30148

Abstract: An image to be measured of a sample that is captured by a microscope is acquired, a first degree that indicates a degree in which the second layer (upper layer) of the sample transmits the first layer (lower layer) is acquired, a first layer template image and a second layer template image indicating pattern shapes of the first layer and the second layer are acquired, pattern matching processing of the second layer is performed based on the second layer template image and the image to be measured to acquire a second position deviation amount related to the second layer and an area recognized as the second layer on the image to be measured, a consideration range of the image to be measured in pattern matching processing of the first layer is determined based on the first degree and the area recognized as the second layer, pattern matching processing of the first layer is performed based on the first layer consideration range, the first layer template image, and the image to be measured to acquire a first position deviation amount related to the first layer and an area recognized as the first layer on the image to be measured, and an overlay is measured based on the second position deviation amount and the first position deviation amount.

公开(公告)号：US20220230842A1

公开(公告)日：2022-07-21

申请号：US17609198

申请日：2019-05-08

Applicant: Hitachi High-Tech Corporation

Inventor： Wei SUN ,  Takuma YAMAMOTO ,  Yasunori GOTO

IPC: H01J37/244 ,  H01J37/28

Abstract: In order to measure a 3D profile of a pattern formed on a sample obtained by stacking a plurality of different materials, for each of materials constituting the pattern, an attenuation coefficient μ indicating a probability of an electron being scattered at a unit distance in the material previously stored, an interface position where different materials are in contact, upper and bottom surface positions of the pattern in a BSE image are extracted, and a depth from the upper surface position to a specified position of the pattern is calculated based on a ratio nIh of a contrast between the specified position and the bottom surface position of the pattern to a contrast between the upper and bottom surface positions of the pattern in the BSE image, an attenuation coefficient of a material at the bottom and specified positions of the pattern.