公开(公告)号：US20180047595A1

公开(公告)日：2018-02-15

申请号：US15558005

申请日：2016-04-27

Applicant: Hitachi High-Technologies Corporation

Inventor： Naoyuki KOFUJI ,  Masahito MORI ,  Toshiaki NISHIDA ,  Ryoji HAMASAKI

IPC: H01L21/67 ,  H01L21/311 ,  H01J37/32 ,  H01L27/115

Abstract: Provided is a plasma processing apparatus capable of implementing both a radical irradiation step and an ion irradiation step using a single apparatus and controlling the ion irradiation energy from several tens eV to several KeV.The plasma processing apparatus includes a mechanism (125, 126, 131, 132) for generating inductively coupled plasma, a perforated plate 116 for partitioning the vacuum processing chamber into upper and lower areas 106-1 and 106-2 and shielding ions, and a switch 133 for changing over between the upper and lower areas 106-1 and 106-2 as a plasma generation area.