公开(公告)号：US20210358760A1

公开(公告)日：2021-11-18

申请号：US16495515

申请日：2019-02-01

Applicant: Hitachi High-Technologies Corporation

Inventor： Sumiko FUJISAKI ,  Yoshihide YAMAGUCHI ,  Hiroyuki KOBAYASHI ,  Kazunori SHINODA ,  Kohei KAWAMURA ,  Yutaka KOUZUMA ,  Masaru IZAWA

IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32

Abstract: Provided is a plasma etching method which enables etching with high accuracy while controlling and reducing surface roughness of a transition metal film. The etching is performed for the transition metal film, which is formed on a sample and contains a transition metal element, by a first step of isotropically generating a layer of transition metal oxide on a surface of the transition metal film while a temperature of the sample is maintained at 100° C. or lower, a second step of raising the temperature of the sample to a predetermined temperature of 150° C. or higher and 250° C. or lower while a complexation gas is supplied to the layer of transition metal oxide, a third step of subliming and removing a reactant generated by an reaction between the complexation gas and the transition metal oxide formed in the first step while the temperature of the sample is maintained at 150° C. or higher and 250° C. or lower, and a fourth step of cooling the sample.

公开(公告)号：US20210233747A1

公开(公告)日：2021-07-29

申请号：US16645960

申请日：2019-02-14

Applicant: Hitachi High-Technologies Corporation

Inventor： Yoshihide YAMAGUCHI ,  Sumiko FUJISAKI

IPC: H01J37/32 ,  C23F1/12

Abstract: Provided is a semiconductor manufacturing apparatus that can etch a metal film containing a transition metal element at high speed and with high accuracy by using a complexing gas. The semiconductor manufacturing apparatus includes: a vacuum container 60; a processing chamber 1 that is provided in the vacuum container, and includes a stage 4 on which a sample 3 formed with a metal film containing a transition metal element is placed; and a vaporization chamber 2 that is provided in the vacuum container, and includes a vaporizing nozzle unit 70 configured to vaporize a complexing gas raw material liquid supplied from an outside. A complexing gas obtained by vaporizing the complexing gas raw material liquid is introduced into the processing chamber to etch the metal film of the sample.