公开(公告)号：US20210358760A1

公开(公告)日：2021-11-18

申请号：US16495515

申请日：2019-02-01

Applicant: Hitachi High-Technologies Corporation

Inventor： Sumiko FUJISAKI ,  Yoshihide YAMAGUCHI ,  Hiroyuki KOBAYASHI ,  Kazunori SHINODA ,  Kohei KAWAMURA ,  Yutaka KOUZUMA ,  Masaru IZAWA

IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32

Abstract: Provided is a plasma etching method which enables etching with high accuracy while controlling and reducing surface roughness of a transition metal film. The etching is performed for the transition metal film, which is formed on a sample and contains a transition metal element, by a first step of isotropically generating a layer of transition metal oxide on a surface of the transition metal film while a temperature of the sample is maintained at 100° C. or lower, a second step of raising the temperature of the sample to a predetermined temperature of 150° C. or higher and 250° C. or lower while a complexation gas is supplied to the layer of transition metal oxide, a third step of subliming and removing a reactant generated by an reaction between the complexation gas and the transition metal oxide formed in the first step while the temperature of the sample is maintained at 150° C. or higher and 250° C. or lower, and a fourth step of cooling the sample.

公开(公告)号：US20210233747A1

公开(公告)日：2021-07-29

申请号：US16645960

申请日：2019-02-14

Applicant: Hitachi High-Technologies Corporation

Inventor： Yoshihide YAMAGUCHI ,  Sumiko FUJISAKI

IPC: H01J37/32 ,  C23F1/12

Abstract: Provided is a semiconductor manufacturing apparatus that can etch a metal film containing a transition metal element at high speed and with high accuracy by using a complexing gas. The semiconductor manufacturing apparatus includes: a vacuum container 60; a processing chamber 1 that is provided in the vacuum container, and includes a stage 4 on which a sample 3 formed with a metal film containing a transition metal element is placed; and a vaporization chamber 2 that is provided in the vacuum container, and includes a vaporizing nozzle unit 70 configured to vaporize a complexing gas raw material liquid supplied from an outside. A complexing gas obtained by vaporizing the complexing gas raw material liquid is introduced into the processing chamber to etch the metal film of the sample.

公开(公告)号：US20190131120A1

公开(公告)日：2019-05-02

申请号：US15906933

申请日：2018-02-27

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yoshihide YAMAGUCHI

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/18 ,  H01L21/3105 ,  C23C16/44 ,  H01L21/3065 ,  H01L29/51

Abstract: A semiconductor manufacturing apparatus includes: a stage installed inside a processing chamber and holding a semiconductor substrate having a high-k insulating film including silicate; and a gas supply line including a first system supplying reactive gas to the processing chamber and a second system supplying catalytic gas to the processing chamber, wherein mixed gas which includes complex forming gas reacting with a metal element included in the high-k insulating film to form a first volatile organometallic complex and complex stabilizing material gas increasing stability of the first organometallic complex is supplied as the reactive gas, and catalytic gas using a second organometallic complex, which modifies the high-k insulating film and promotes a formation reaction of the first organometallic complex, as a raw material is supplied.

公开(公告)号：US20180308707A1

公开(公告)日：2018-10-25

申请号：US15904878

申请日：2018-02-26

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yoshihide YAMAGUCHI

IPC: H01L21/311 ,  H01L21/67 ,  H01L29/51 ,  H01L21/28

CPC classification number: H01L21/31122 ,  C23C16/45559 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/28185 ,  H01L21/31144 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/6719 ,  H01L29/517

Abstract: Provided is a semiconductor manufacturing apparatus including: a container in which a processing chamber is installed; a stage installed in the processing chamber and configured to hold a semiconductor substrate; a gas supply line configured to supply reactive gas to the processing chamber; and a vacuum line configured to exhaust the processing chamber, wherein the semiconductor substrate includes a high-k insulating film, and as the reactive gas, mixed gas including complex-forming gas forming a volatile organometallic complex by reacting with a metal element included in the high-k insulating film and complex stabilizing material gas that increases stability of the organometallic complex is supplied.