公开(公告)号：US20090035930A1

公开(公告)日：2009-02-05

申请号：US12146729

申请日：2008-06-26

申请人： Ho-Jun Yi ,  Yong-ll Kim ,  Bong-Soo Kim ,  Dae-Young Jang ,  Woo-Jeong Cho

发明人： Ho-Jun Yi ,  Yong-ll Kim ,  Bong-Soo Kim ,  Dae-Young Jang ,  Woo-Jeong Cho

IPC分类号： H01L21/768

CPC分类号： H01L27/105 ,  H01L23/535 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a method of forming a wire structure, first active regions and second active regions are formed on a substrate. Each of the first active regions has a first sidewall of a positive slope and a second sidewall opposed to the first sidewall. The second active regions are arranged along a first direction. An isolation layer is between the first active regions and the second active regions. A first mask is formed on the first active regions, the second active regions and the isolation layer. The first mask has an opening exposing the first sidewall and extending along the first direction. The first active regions, the second active regions and the isolation layer are etched using the first mask to form a groove extending along the first direction and to form a fence having a height substantially higher than a bottom face of the groove. A wire is formed to fill the groove. A contact is formed on the wire. The contact is disposed toward the second active regions from the fence.

摘要翻译： 在形成线结构的方法中，在衬底上形成第一有源区和第二有源区。 每个第一有源区具有正斜率的第一侧壁和与第一侧壁相对的第二侧壁。 第二有源区沿第一方向排列。 隔离层位于第一有源区和第二有源区之间。 第一掩模形成在第一有源区，第二有源区和隔离层上。 第一掩模具有暴露第一侧壁并沿着第一方向延伸的开口。 使用第一掩模蚀刻第一有源区，第二有源区和隔离层，以形成沿着第一方向延伸的凹槽，并形成具有高于凹槽的底面的高度的栅栏。 形成线以填充凹槽。 在导线上形成接触。 接触件从栅栏朝向第二活动区域设置。

公开(公告)号：US07772103B2

公开(公告)日：2010-08-10

申请号：US12146729

申请日：2008-06-26

申请人： Ho-Jun Yi ,  Yong-Il Kim ,  Bong-Soo Kim ,  Dae-Young Jang ,  Woo-Jeong Cho

发明人： Ho-Jun Yi ,  Yong-Il Kim ,  Bong-Soo Kim ,  Dae-Young Jang ,  Woo-Jeong Cho

IPC分类号： H01L21/3205 ,  H01L21/4763

CPC分类号： H01L27/105 ,  H01L23/535 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a method of forming a wire structure, first active regions and second active regions are formed on a substrate. Each of the first active regions has a first sidewall of a positive slope and a second sidewall opposed to the first sidewall. The second active regions are arranged along a first direction. An isolation layer is between the first active regions and the second active regions. A first mask is formed on the first active regions, the second active regions and the isolation layer. The first mask has an opening exposing the first sidewall and extending along the first direction. The first active regions, the second active regions and the isolation layer are etched using the first mask to form a groove extending along the first direction and to form a fence having a height substantially higher than a bottom face of the groove. A wire is formed to fill the groove. A contact is formed on the wire. The contact is disposed toward the second active regions from the fence.

摘要翻译： 在形成线结构的方法中，在衬底上形成第一有源区和第二有源区。 每个第一有源区具有正斜率的第一侧壁和与第一侧壁相对的第二侧壁。 第二有源区沿第一方向排列。 隔离层位于第一有源区和第二有源区之间。 第一掩模形成在第一有源区，第二有源区和隔离层上。 第一掩模具有暴露第一侧壁并沿着第一方向延伸的开口。 使用第一掩模蚀刻第一有源区，第二有源区和隔离层，以形成沿着第一方向延伸的凹槽，并形成具有高于凹槽的底面的高度的栅栏。 形成线以填充凹槽。 在导线上形成接触。 接触件从栅栏朝向第二活动区域设置。

公开(公告)号：US08309460B2

公开(公告)日：2012-11-13

申请号：US12662993

申请日：2010-05-14

申请人： Dae-Ik Kim ,  Ho-Jun Yi

发明人： Dae-Ik Kim ,  Ho-Jun Yi

IPC分类号： H01L21/44

CPC分类号： H01L21/76895 ,  H01L21/0337 ,  H01L21/31144 ,  H01L27/0207 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10888

摘要： Provided are methods of manufacturing semiconductor devices by which two different kinds of contact holes with different sizes are formed using one photolithography process. The methods include preparing a semiconductor substrate in which an active region is titled in a diagonal direction. A hard mask is formed on the entire surface of the semiconductor substrate. A mask hole is patterned not to overlap a word line. A first oxide layer is deposited on the hard mask, and the hard mask is removed to form a piston-shaped sacrificial pattern. A first polysilicon (poly-Si) layer is deposited on the sacrificial pattern and patterned to form a cylindrical first sacrificial mask surrounding the piston-shaped sacrificial pattern. A second oxide layer is coated on the first sacrificial mask to such an extent as to form voids. A second poly-Si layer is deposited in the voids and patterned to form a pillar-shaped second sacrificial mask. The second oxide layer is removed to expose the active region. The sectional area of a buried contact (BC) storage contact pad may be increased, while the sectional area of a direct contact (DC) bit line contact pad may be reduced.

摘要翻译： 提供制造半导体器件的方法，通过该半导体器件，使用一个光刻工艺形成具有不同尺寸的两种不同种类的接触孔。 所述方法包括制备半导体衬底，其中活性区域在对角线方向上标称。 在半导体基板的整个表面上形成硬掩模。 图案掩模孔不与字线重叠。 在硬掩模上沉积第一氧化物层，并且去除硬掩模以形成活塞形牺牲图案。 第一多晶硅（poly-Si）层沉积在牺牲图案上并被图案化以形成围绕活塞形牺牲图案的圆柱形第一牺牲掩模。 将第二氧化物层涂覆在第一牺牲掩模上至达到形成空隙的程度。 将第二多晶硅层沉积在空隙中并图案化以形成柱状的第二牺牲掩模。 去除第二氧化物层以暴露活性区域。 埋入触点（BC）存储接触焊盘的截面积可以增加，而直接接触（DC）位线接触焊盘的截面积可能会减小。

公开(公告)号：US20110065275A1

公开(公告)日：2011-03-17

申请号：US12662993

申请日：2010-05-14

申请人： Dae-Ik Kim ,  Ho-Jun Yi

发明人： Dae-Ik Kim ,  Ho-Jun Yi

IPC分类号： H01L21/768

CPC分类号： H01L21/76895 ,  H01L21/0337 ,  H01L21/31144 ,  H01L27/0207 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10888

摘要： Provided are methods of manufacturing semiconductor devices by which two different kinds of contact holes with different sizes are formed using one photolithography process. The methods include preparing a semiconductor substrate in which an active region is titled in a diagonal direction. A hard mask is formed on the entire surface of the semiconductor substrate. A mask hole is patterned not to overlap a word line. A first oxide layer is deposited on the hard mask, and the hard mask is removed to form a piston-shaped sacrificial pattern. A first polysilicon (poly-Si) layer is deposited on the sacrificial pattern and patterned to form a cylindrical first sacrificial mask surrounding the piston-shaped sacrificial pattern. A second oxide layer is coated on the first sacrificial mask to such an extent as to form voids. A second poly-Si layer is deposited in the voids and patterned to form a pillar-shaped second sacrificial mask. The second oxide layer is removed to expose the active region. The sectional area of a buried contact (BC) storage contact pad may be increased, while the sectional area of a direct contact (DC) bit line contact pad may be reduced.

摘要翻译： 提供制造半导体器件的方法，通过该半导体器件，使用一个光刻工艺形成具有不同尺寸的两种不同种类的接触孔。 所述方法包括制备半导体衬底，其中活性区域在对角线方向上标称。 在半导体基板的整个表面上形成硬掩模。 图案掩模孔不与字线重叠。 在硬掩模上沉积第一氧化物层，并且去除硬掩模以形成活塞形牺牲图案。 第一多晶硅（poly-Si）层沉积在牺牲图案上并被图案化以形成围绕活塞形牺牲图案的圆柱形第一牺牲掩模。 将第二氧化物层涂覆在第一牺牲掩模上至达到形成空隙的程度。 将第二多晶硅层沉积在空隙中并图案化以形成柱状的第二牺牲掩模。 去除第二氧化物层以暴露活性区域。 埋入触点（BC）存储接触焊盘的截面积可以增加，而直接接触（DC）位线接触焊盘的截面积可能会减小。