公开(公告)号：US20120127309A1

公开(公告)日：2012-05-24

申请号：US13031935

申请日：2011-02-22

Applicant: Hong Seok LEE

Inventor： Hong Seok LEE

IPC: G06K9/46 ,  H04N7/18

CPC classification number: G06K9/00805 ,  G06K9/3233 ,  G06K9/4642 ,  H04N7/18

Abstract: Provided is an object recognition system. The object recognition system recognizes an object in an ROI of a source image. The object recognition system includes an image change unit and an ROI detection unit. The image change unit receives the source image, and changes the object into an edge image which is represented as an edge line. The ROI detection unit divides the edge image into a plurality of regions, compares a total sum of edge component values of an edge line included in each of the regions and a predetermined threshold value by regions, and detects a region, in which the total sum of edge component values is greater than the threshold value, as the ROI from among the plurality of regions.

Abstract translation: 提供了一种对象识别系统。 物体识别系统识别源图像的ROI中的对象。 物体识别系统包括图像改变单元和ROI检测单元。 图像改变单元接收源图像，并将对象改变为表示为边缘线的边缘图像。 ROI检测单元将边缘图像划分为多个区域，将每个区域中包括的边缘线的边缘分量值与预定阈值的区域的总和相加，并且检测其中总和 边缘分量值大于阈值，作为多个区域中的ROI。

公开(公告)号：US20120256165A1

公开(公告)日：2012-10-11

申请号：US13325671

申请日：2011-12-14

Applicant: Hong Seok LEE

Inventor： Hong Seok LEE

IPC: H01L29/66 ,  H01L21/04 ,  B82Y40/00 ,  B82Y99/00

CPC classification number: H01L29/127 ,  B82Y10/00

Abstract: The present disclosure provides a single-quantum dot device and a method of manufacturing the same. A transparent dielectric thin film is formed on a cover layer and an energy band of quantum dots is adjusted based on compressive stress due to difference in coefficient of thermal expansion therebetween. Specifically, the dielectric thin film has a lower coefficient of thermal expansion than the cover layer and compressive stress is applied to the cover layer by radiation of laser beams. Then, the quantum dots undergo compressive stress and the energy band of the quantum dots increases with increasing intensity of the laser beams.

Abstract translation: 本发明提供一种单量子点装置及其制造方法。 在覆盖层上形成透明电介质薄膜，并且由于其间的热膨胀系数的差异，基于压缩应力来调整量子点的能带。 具体地说，电介质薄膜的热膨胀系数比覆盖层低，通过激光的辐射对覆盖层施加压应力。 然后，量子点经历压缩应力，量子点的能带随着激光束强度的增加而增加。

公开(公告)号：US20120267603A1

公开(公告)日：2012-10-25

申请号：US13325528

申请日：2011-12-14

Applicant: Hong Seok LEE

Inventor： Hong Seok LEE

IPC: H01L29/12 ,  H01L21/316 ,  B82Y40/00

CPC classification number: H01L29/127 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00

Abstract: Disclosed are a method for fabricating a quantum dot. The method includes the steps of (a) preparing a compound semiconductor layer including a quantum well structure formed by sequentially stacking a first barrier layer, a well layer and a second barrier layer; (b) forming a dielectric thin film pattern including a first dielectric thin film having a thermal expansion coefficient higher than a thermal expansion coefficient of the second barrier layer and a second dielectric thin film having a thermal expansion coefficient lower than the thermal expansion coefficient of the second barrier layer on the second barrier layer; and (c) heat-treating the compound semiconductor layer formed thereon with the dielectric thin film pattern to cause an intermixing between elements of the well layer and elements of the barrier layers at a region of the compound semiconductor layer under the second dielectric thin film.

Abstract translation: 公开了一种制造量子点的方法。 该方法包括以下步骤：（a）制备包括通过依次层叠第一阻挡层，阱层和第二阻挡层而形成的量子阱结构的化合物半导体层; （b）形成电介质薄膜图案，该电介质薄膜图案包括热膨胀系数高于第二阻挡层的热膨胀系数的第一电介质薄膜和热膨胀系数低于热膨胀系数的第二电介质薄膜 第二阻挡层; 和（c）利用电介质薄膜图案对其上形成的化合物半导体层进行热处理，以在第二介电薄膜下方的化合物半导体层的区域处引起阱层的元件与势垒层的元件之间的混合。