公开(公告)号：US20140061732A1

公开(公告)日：2014-03-06

申请号：US13596808

申请日：2012-08-28

申请人： Hong Yu ,  Wang Haiting ,  Yongsik Moon ,  James Lee ,  Huang Liu

发明人： Hong Yu ,  Wang Haiting ,  Yongsik Moon ,  James Lee ,  Huang Liu

IPC分类号： H01L21/28 ,  H01L29/78

CPC分类号： H01L29/165 ,  H01L21/76837 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66636

摘要： A method for enabling fabrication of RMG devices having a low gate height variation and a substantially planar topography and resulting device are disclosed. Embodiments include: providing on a substrate two dummy gate electrodes, each between a pair of spacers; providing a source/drain region between the two dummy gate electrodes; and forming a first nitride layer over the two dummy gate electrodes and the source/drain region, wherein the first nitride layer comprises a first portion over the dummy gate electrodes and a second portion over the source/drain region, and the second portion has an upper surface substantially coplanar with an upper surface of the dummy gate electrodes.

摘要翻译： 公开了一种能够制造具有低栅极高度变化的RMG器件和基本平坦的地形和结果器件的方法。 实施例包括：在衬底上提供两个虚拟栅极电极，每个在一对间隔物之间​​; 在两个虚拟栅电极之间提供源/漏区; 以及在所述两个伪栅极电极和所述源极/漏极区域上形成第一氮化物层，其中所述第一氮化物层包括在所述伪栅极电极之上的第一部分和所述源极/漏极区域上的第二部分，并且所述第二部分具有 上表面与虚拟栅电极的上表面基本上共面。

公开(公告)号：US08962407B2

公开(公告)日：2015-02-24

申请号：US13596808

申请日：2012-08-28

申请人： Hong Yu ,  Wang Haiting ,  Yongsik Moon ,  James Lee ,  Huang Liu

发明人： Hong Yu ,  Wang Haiting ,  Yongsik Moon ,  James Lee ,  Huang Liu

IPC分类号： H01L21/338

CPC分类号： H01L29/165 ,  H01L21/76837 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66636

摘要： A method for enabling fabrication of RMG devices having a low gate height variation and a substantially planar topography and resulting device are disclosed. Embodiments include: providing on a substrate two dummy gate electrodes, each between a pair of spacers; providing a source/drain region between the two dummy gate electrodes; and forming a first nitride layer over the two dummy gate electrodes and the source/drain region, wherein the first nitride layer comprises a first portion over the dummy gate electrodes and a second portion over the source/drain region, and the second portion has an upper surface substantially coplanar with an upper surface of the dummy gate electrodes.

摘要翻译： 公开了一种能够制造具有低栅极高度变化的RMG器件和基本平坦的地形和结果器件的方法。 实施例包括：在衬底上提供两个虚拟栅极电极，每个在一对间隔物之间​​; 在两个虚拟栅电极之间提供源/漏区; 以及在所述两个伪栅极电极和所述源极/漏极区域上形成第一氮化物层，其中所述第一氮化物层包括在所述伪栅极电极之上的第一部分和所述源极/漏极区域上的第二部分，并且所述第二部分具有 上表面与虚拟栅电极的上表面基本上共面。