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    Semiconductor device forming method
    1.
    发明授权
    Semiconductor device forming method 失效
    半导体器件形成方法

    公开(公告)号：US07943930B2

    公开(公告)日：2011-05-17

    申请号：US12143035

    申请日：2008-06-20

    申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

    发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

    IPC分类号： H01L29/04

    CPC分类号： H01L29/045 ,  G09G2300/0408 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/66757

    摘要： In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.

    摘要翻译： 在具有适于批量生产的结晶硅有源层的薄膜晶体管（TFT）中，通过离子注入或其它方式将催化元素引入到非晶硅膜的掺杂区域中。 该膜在低于玻璃基板的应变点的温度下结晶。 此外，形成栅极绝缘膜和栅电极。 杂质通过自对准过程引入。 然后，层压体在基板的应变点以下退火以活化掺杂剂杂质。 另一方面，Neckel或其它元素也用作促进非晶硅膜结晶的催化元素。 首先，将该催化元件与非晶硅膜的表面接触。 将膜在450至650℃加热以产生晶核。 将膜进一步在较高温度下加热以生长晶粒。 以这种方式，形成具有改善的结晶度的晶体硅膜。

    Semiconductor device forming method
    2.
    发明授权
    Semiconductor device forming method 失效
    半导体器件形成方法

    公开(公告)号：US07391051B2

    公开(公告)日：2008-06-24

    申请号：US11321640

    申请日：2005-12-30

    申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

    发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

    IPC分类号： H01L31/00

    CPC分类号： H01L29/045 ,  G09G2300/0408 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/66757

    摘要： In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.

    摘要翻译： 在具有适于批量生产的结晶硅有源层的薄膜晶体管（TFT）中，通过离子注入或其它方式将催化元素引入到非晶硅膜的掺杂区域中。 该膜在低于玻璃基板的应变点的温度下结晶。 此外，形成栅极绝缘膜和栅电极。 杂质通过自对准过程引入。 然后，层压体在基板的应变点以下退火以活化掺杂剂杂质。 另一方面，Neckel或其它元素也用作促进非晶硅膜结晶的催化元素。 首先，将该催化元件与非晶硅膜的表面接触。 将膜在450至650℃加热以产生晶核。 将膜进一步在较高温度下加热以生长晶粒。 以这种方式，形成具有改善的结晶度的晶体硅膜。

    Semiconductor device structure
    6.
    发明授权
    Semiconductor device structure 失效
    半导体器件结构

    公开(公告)号：US06987283B2

    公开(公告)日：2006-01-17

    申请号：US10180015

    申请日：2002-06-27

    申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

    发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

    IPC分类号： H01L29/76

    CPC分类号： H01L29/045 ,  G09G2300/0408 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/66757

    摘要： In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.

    摘要翻译： 在具有适于批量生产的结晶硅有源层的薄膜晶体管（TFT）中，通过离子注入或其它方式将催化元素引入到非晶硅膜的掺杂区域中。 该膜在低于玻璃基板的应变点的温度下结晶。 此外，形成栅极绝缘膜和栅电极。 杂质通过自对准过程引入。 然后，层压体在基板的应变点以下退火以活化掺杂剂杂质。 另一方面，Neckel或其它元素也用作促进非晶硅膜结晶的催化元素。 首先，将该催化元件与非晶硅膜的表面接触。 将膜在450至650℃加热以产生晶核。 将膜进一步在较高温度下加热以生长晶粒。 以这种方式，形成具有改善的结晶度的晶体硅膜。

    Semiconductor device forming method
    8.
    发明授权
    Semiconductor device forming method 失效
    半导体器件形成方法

    公开(公告)号：US06140165A

    公开(公告)日：2000-10-31

    申请号：US709111

    申请日：1996-09-06

    申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

    发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

    IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84

    CPC分类号： H01L29/045 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/66757 ,  G09G2300/0408

    摘要： In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Nickel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650.degree. C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.

    摘要翻译： 在具有适于批量生产的结晶硅有源层的薄膜晶体管（TFT）中，通过离子注入或其它方式将催化元素引入到非晶硅膜的掺杂区域中。 该膜在低于玻璃基板的应变点的温度下结晶。 此外，形成栅极绝缘膜和栅电极。 杂质通过自对准过程引入。 然后，层压体在基板的应变点以下退火以活化掺杂剂杂质。 另一方面，镍或其他元素也用作促进非晶硅膜结晶的催化元素。 首先，将该催化元件与非晶硅膜的表面接触。 将膜在450至650℃下加热以产生晶核。 将膜进一步在较高温度下加热以生长晶粒。 以这种方式，形成具有改善的结晶度的晶体硅膜。

    Transistor and semiconductor device
    10.
    发明授权
    Transistor and semiconductor device 失效
    晶体管和半导体器件

    公开(公告)号：US5818076A

    公开(公告)日：1998-10-06

    申请号：US593552

    申请日：1996-01-30

    申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

    发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

    IPC分类号： H01L21/20 ,  H01L29/786 ,  H01L29/04 ,  H01L31/036

    CPC分类号： H01L21/2022 ,  H01L29/78675

    摘要： A semiconductor device having high carrier mobility, which comprises a substrate provided thereon a base film and further thereon a crystalline non-single crystal silicon film by crystal growth, wherein, the crystals are grown along the crystallographic �110! axis, and source/drain regions are provided approximately along the direction of carrier movement which coincides to the direction of crystal growth. Moreover, the electric conductivity along this direction of crystal growth is higher than any in other directions.

    摘要翻译： 具有高载流子迁移率的半导体器件，其包括在其上设置有基膜的基板，并且还通过晶体生长形成晶体非单晶硅膜，其中晶体沿晶体[110]轴生长，源极/漏极 区域大致沿着与晶体生长方向一致的载体移动方向设置。 此外，沿晶体生长方向的导电率高于其它方向的导电率。