In-situ ion implant activation and measurement apparatus
    3.
    发明授权
    In-situ ion implant activation and measurement apparatus 有权
    原位离子注入激活和测量装置

    公开(公告)号:US06417515B1

    公开(公告)日:2002-07-09

    申请号:US09527192

    申请日:2000-03-17

    IPC分类号: H01J37317

    摘要: A substrate, such as a semiconductor chip or wafer, is implanted along with product wafers in an ion implant vacuum system. The substrate is then annealed in an annealing step that is accomplished while the substrate is within the vacuum system. The annealer is a rapid thermal annealer, such as a laser annealer or a flash lamp annealer. The annealing step does not affect the product wafers. Then a measurement is performed on the implanted and annealed substrate while it is within the vacuum system that can be suitably correlated with implant dose. The measurement can be with a technique such as a four point probe or with a tool that measures optical reflectivity from a surface of the implanted substrate. An additional implant can then be provided to product wafers if necessary to come closer to the desired dose.

    摘要翻译: 将衬底(例如半导体芯片或晶片)与产品晶片一起植入离子注入真空系统中。 然后在基板处于真空系统内的退火步骤中退火基板。 退火炉是快速热退火炉,例如激光退火炉或闪光灯退火炉。 退火步骤不影响产品晶圆。 然后对植入和退火的基底进行测量,同时它在可以适当地与植入剂量相关联的真空系统内。 该测量可以采用诸如四点探针的技术或者用来测量从植入的衬底的表面的光学反射率的工具。 如果需要,可以将另外的植入物提供给产品晶片以更接近所需剂量。