公开(公告)号：US20080083612A1

公开(公告)日：2008-04-10

申请号：US11905241

申请日：2007-09-28

申请人： Huan WANG ,  Ka Ming NG ,  Xijun HU ,  Jiyun FENG

发明人： Huan WANG ,  Ka Ming NG ,  Xijun HU ,  Jiyun FENG

IPC分类号： C23C14/00

CPC分类号： C23C14/165 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/08 ,  C23C14/584 ,  C30B11/12 ,  C30B25/02 ,  C30B29/602 ,  H01L23/373 ,  H01L2924/0002 ,  H01L2924/00

摘要： Aligned multi-walled carbon nanotubes were grown on both sides of a metallic or metal-coated substrate by water vapor-assisted chemical vapor deposition. Aligned carbon nanotube films of thickness ranging from 1 μm to over 100 μm were obtained. By manipulating various operating factors—position of substrate in the reactor, amount of water vapor, amount of catalyst, reactor temperature, and growth time, the morphology and thickness of these carbon nanotube films could be adjusted.

摘要翻译： 通过水蒸汽辅助化学气相沉积在金属或金属涂覆的基底的两面上生长对准的多壁碳纳米管。 得到厚度范围从1um到超过100μm的对准碳纳米管薄膜。 通过操作各种操作因素 - 反应器中底物的位置，水蒸汽量，催化剂量，反应器温度和生长时间，可以调节这些碳纳米管膜的形态和厚度。