公开(公告)号：US20240364013A1

公开(公告)日：2024-10-31

申请号：US18758864

申请日：2024-06-28

Applicant: Huawei Technologies Co., Ltd.

Inventor： Yin He ,  Zhongshan Tang ,  Chen Gao ,  Daqing Peng ,  Xiaopan Yang

IPC: H01Q9/04 ,  G01S7/03 ,  H01Q1/48 ,  H01Q13/06

CPC classification number: H01Q9/045 ,  G01S7/032 ,  H01Q1/48 ,  H01Q13/06

Abstract: A transfer structure includes a circuit board that includes a first metal layer, a second metal layer, and a dielectric layer. The dielectric layer is located between the first metal layer and the second metal layer. The first metal layer includes a radiation portion and a microstrip that is coupled to one end of the radiation portion. The second metal layer is grounded. The radiation portion is provided with an opening to enable the radiation portion to form at least two resonance frequencies such that the operating bandwidth of the transfer structure can be extended.