公开(公告)号：US20230411486A1

公开(公告)日：2023-12-21

申请号：US18460216

申请日：2023-09-01

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Gilberto Curatola ,  Qilong Bao ,  Qimeng Jiang ,  Gaofei Tang ,  Hanxing Wang

IPC: H01L29/47 ,  H01L29/20 ,  H01L29/778

CPC classification number: H01L29/475 ,  H01L29/2003 ,  H01L29/7786

Abstract: The disclosure relates to a Gallium Nitride power transistor, comprising: a buffer layer; and a barrier layer having a top side, a bottom side, the bottom side facing the buffer layer, the bottom side of the barrier layer is placed on the buffer layer; an interlayer interposed between a p-type doped Gallium Nitride layer and a metal gate layer, the interlayer is made of a III-V compound semiconductor comprising a combination of at least one group III element with at least one group V element, the p-type doped Gallium Nitride layer is placed on the top side of the barrier layer, the metal gate layer is electrically connected to the p-type doped Gallium Nitride layer via the interlayer to form a rectifying metal-semiconductor junction with the p-type doped Gallium Nitride layer.

公开(公告)号：US20240204094A1

公开(公告)日：2024-06-20

申请号：US18592325

申请日：2024-02-29

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Gaofei Tang ,  Daisuke Ueda ,  Hui Sun ,  Qilong Bao ,  Hanxing Wang

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/66462

Abstract: A gallium nitride component includes a gallium nitride layer, a barrier layer on a surface of a side of the gallium nitride layer, and a gate on a side that is of the barrier layer and that is away from the gallium nitride layer. The gallium nitride layer has a gate region and a non-gate region outside the gate region. The barrier layer is located in the gate region and the non-gate region. A size of the barrier layer located in the gate region is greater than a size of the barrier layer located in the non-gate region, and aluminum concentration on a side that is of the barrier layer located in the gate region and that faces the gallium nitride layer is greater than aluminum concentration on a side that is of the barrier layer located in the gate region and that faces the gate.

公开(公告)号：US20220344485A1

公开(公告)日：2022-10-27

申请号：US17727221

申请日：2022-04-22

Applicant: Huawei Technologies Co., Ltd.

Inventor： Qilong Bao ,  Qimeng Jiang ,  Gaofei Tang ,  Hanxing Wang ,  Boning Huang ,  Zhaozheng Hou

IPC: H01L29/45 ,  H03K17/041 ,  H01L29/778 ,  H01L29/66 ,  H01L29/40 ,  H01L29/417

Abstract: A gallium nitride (GaN) device, where a drain of the GaN device includes a p-type (P-GaN) layer and a drain metal. The drain metal includes a plurality of first structural intervals and a plurality of second structural intervals. The plurality of first structural intervals and the plurality of second structural intervals are alternately distributed in the gate width direction. In this way, the drain metal implements local injection of holes for the device in the first structural intervals, and forms ohmic contact in the second structural intervals, implementing current conduction from a drain to a source of the device.