公开(公告)号：US20230411486A1

公开(公告)日：2023-12-21

申请号：US18460216

申请日：2023-09-01

申请人： HUAWEI TECHNOLOGIES CO., LTD.

发明人： Gilberto Curatola ,  Qilong Bao ,  Qimeng Jiang ,  Gaofei Tang ,  Hanxing Wang

IPC分类号： H01L29/47 ,  H01L29/20 ,  H01L29/778

CPC分类号： H01L29/475 ,  H01L29/2003 ,  H01L29/7786

摘要： The disclosure relates to a Gallium Nitride power transistor, comprising: a buffer layer; and a barrier layer having a top side, a bottom side, the bottom side facing the buffer layer, the bottom side of the barrier layer is placed on the buffer layer; an interlayer interposed between a p-type doped Gallium Nitride layer and a metal gate layer, the interlayer is made of a III-V compound semiconductor comprising a combination of at least one group III element with at least one group V element, the p-type doped Gallium Nitride layer is placed on the top side of the barrier layer, the metal gate layer is electrically connected to the p-type doped Gallium Nitride layer via the interlayer to form a rectifying metal-semiconductor junction with the p-type doped Gallium Nitride layer.

公开(公告)号：US20240079233A1

公开(公告)日：2024-03-07

申请号：US18509050

申请日：2023-11-14

申请人： HUAWEI TECHNOLOGIES CO., LTD.

发明人： Gilberto Curatola ,  Marco Silvestri

IPC分类号： H01L21/02 ,  H01L27/06 ,  H01L29/24 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  H01L31/032 ,  H01L31/108

CPC分类号： H01L21/02565 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02496 ,  H01L21/02576 ,  H01L21/02617 ,  H01L27/0629 ,  H01L29/24 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  H01L31/032 ,  H01L31/108

摘要： A member is provided which includes a silicon base substrate layer, a transition layer arranged over the silicon base substrate layer, and a gallium nitride (GaN) buffer layer arranged over the transition layer. The member further includes a gallium oxide layer. The member is beneficial for co-integration of ultra-wide-bandgap technology with wide bandgap technology, such as by using the gallium oxide layer with the gallium nitride buffer layer on cheap silicon substrates, such as the silicon base substrate layer. Therefore, the member provides access to establish the gallium nitride buffer layer (or gallium nitride) on the silicon base substrate layer (or silicon production lines) with improved thermal conductivity and higher electrical performance.

公开(公告)号：US20230335597A1

公开(公告)日：2023-10-19

申请号：US18338125

申请日：2023-06-20

申请人： HUAWEI TECHNOLOGIES CO., LTD.

发明人： Gilberto Curatola

IPC分类号： H01L29/20 ,  H01L29/812 ,  H01L29/06 ,  H01L29/47 ,  H01L29/15

CPC分类号： H01L29/2003 ,  H01L29/812 ,  H01L29/0661 ,  H01L29/0611 ,  H01L29/475 ,  H01L29/157

摘要： The present disclosure relates to a Gallium Nitride (GaN) power transistor, comprising: a buffer layer; a barrier layer deposited on the buffer layer, wherein a gate region is formed on top of the barrier layer; a p-type doped GaN layer deposited on the barrier layer at the gate region; and a metal gate layer deposited on top of the p-type doped GaN layer, wherein the metal gate layer is contacting the p-type doped GaN layer to form a Schottky barrier, wherein a thickness of the p-type doped GaN layer, a metal type of the metal gate layer and a p-type doping concentration of the p-type doped GaN layer are based on a known relationship of a pGaN Schottky gate depletion region thickness with respect to a p-type doping concentration and a gate metal type.