公开(公告)号：US11502209B2

公开(公告)日：2022-11-15

申请号：US16366699

申请日：2019-03-27

Applicant: Huawei Technologies Co., Ltd.

Inventor： Xudong Qin ,  Bo Zhang ,  Chenxiong Zhang

IPC: H01L31/0224 ,  H01B1/04 ,  H01B5/14 ,  C23C16/26 ,  C23C14/18 ,  C23C14/30 ,  H01L31/18

Abstract: A transparent electrode is provided having a graphene conducting layer disposed above a substrate, a field effect control layer formed by using a transparent material, and a dielectric layer disposed between the graphene conducting layer and the field effect control layer, wherein the field effect control layer has a polarity charge in a working state. A sheet resistance of the transparent electrode is reduced.

公开(公告)号：US10600917B2

公开(公告)日：2020-03-24

申请号：US16119415

申请日：2018-08-31

Applicant: Huawei Technologies Co., Ltd.

Inventor： Xudong Qin ,  Huilong Xu ,  Chen-Xiong Zhang

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/24 ,  H01L29/66 ,  H01L29/778 ,  H01L29/16 ,  H01L29/10 ,  H01L29/417 ,  H01L29/78

Abstract: A field effect transistor and a manufacturing method thereof are provided. The field effect transistor includes two top gate structures (1031C and 1031D) and two bottom gate structures (1032A and 1032B). The top gate structures (1031C and 1031D) and the bottom gate structures (1032A and 1032B) are opposite to each other in pair. This increases a quantity of control-voltage-induced carriers in the field effect transistor, and therefore increases an output current of the field effect transistor, improves a power gain limit frequency in high-frequency use, and makes an electric field between the top gate structures (1031C and 1031D) and the bottom gate structures (1032A and 1032B) more adequately cover a channel layer (106) between source structures (1041 and 1042) and a drain (105), thereby reducing a parasitic effect in a high frequency, and further improving a frequency characteristic of the field effect transistor.

公开(公告)号：US20240333319A1

公开(公告)日：2024-10-03

申请号：US18620047

申请日：2024-03-28

Applicant: Huawei Technologies Co., Ltd.

Inventor： Hangtian Hou ,  Huayong Jia ,  Xudong Qin

IPC: H04B1/00 ,  H04B1/16

CPC classification number: H04B1/006 ,  H04B1/001 ,  H04B1/1615

Abstract: This application provides a radio frequency front-end circuit, comprising: A first switch group includes a first output end and a second output end, configured to selectively transmit, to the first output end and the second output end, a carrier aggregation signal received from an antenna; a phase-shift filter is coupled to the second output end, and is configured to: perform phase-shifting and filtering on the carrier aggregation signal, and output a phase-shifted filtered signal; a second switch group includes at least one third output end, and each third output end is configured to output the phase-shifted filtered signal; and the at least one third output end is coupled to a second filter and a third filter, and the second filter and the third filter are configured to: separately perform filtering on the phase-shifted filtered signal, and then respectively output the second frequency band signal and the third frequency band signal.

公开(公告)号：US20190221689A1

公开(公告)日：2019-07-18

申请号：US16366699

申请日：2019-03-27

Applicant: Huawei Technologies Co., Ltd.

Inventor： Xudong Qin ,  Bo Zhang ,  Chenxiong Zhang

IPC: H01L31/0224 ,  H01B1/04 ,  H01B5/14 ,  H01L31/18 ,  C23C14/18 ,  C23C14/30 ,  C23C16/26

CPC classification number: H01L31/022466 ,  C23C14/18 ,  C23C14/30 ,  C23C16/26 ,  H01B1/04 ,  H01B5/14 ,  H01L31/18 ,  H01L31/1884 ,  Y02P70/521

Abstract: A transparent electrode is provided having a graphene conducting layer disposed above a substrate, a field effect control layer formed by using a transparent material, and a dielectric layer disposed between the graphene conducting layer and the field effect control layer, wherein the field effect control layer has a polarity charge in a working state. A sheet resistance of the transparent electrode is reduced.