公开(公告)号：US20230152999A1

公开(公告)日：2023-05-18

申请号：US17994884

申请日：2022-11-28

Applicant: Huawei Technologies Co., Ltd.

Inventor： Jea Woong Hyun ,  Chun Liu ,  Chaohong Hu ,  Xin Liao

IPC: G06F3/06

CPC classification number: G06F3/064 ,  G06F3/0679 ,  G06F3/0619

Abstract: Write operation and garbage collection methods are provided for a Solid State Drive (SSD) controller of a SSD having Not-AND (NAND) flash memory devices with on-die Static Random Access Memory (SRAM) and NAND flash memory. In the write operation method, a received block of data is stored in on-die SRAM of the NAND flash device, rather than in on-chip SRAM of the controller, prior to programming into NAND flash memory. Until programmed into NAND flash memory, the block of data remains available in the on-die SRAM to fulfill an ‘immediate read’ operation, if received. In the garbage collection method, blocks of data are read from one or more source NAND flash devices and stored in on-die SRAM of a destination NAND flash device until a limit of such blocks has been reached, then the destination NAND flash device programs the blocks from the on-die SRAM into NAND flash memory.

公开(公告)号：US12254201B2

公开(公告)日：2025-03-18

申请号：US17994884

申请日：2022-11-28

Applicant: Huawei Technologies Co., Ltd.

Inventor： Jea Woong Hyun ,  Chun Liu ,  Chaohong Hu ,  Xin Liao

IPC: G06F3/06

Abstract: Write operation and garbage collection methods are provided for a Solid State Drive (SSD) controller of a SSD having Not-AND (NAND) flash memory devices with on-die Static Random Access Memory (SRAM) and NAND flash memory. In the write operation method, a received block of data is stored in on-die SRAM of the NAND flash device, rather than in on-chip SRAM of the controller, prior to programming into NAND flash memory. Until programmed into NAND flash memory, the block of data remains available in the on-die SRAM to fulfill an ‘immediate read’ operation, if received. In the garbage collection method, blocks of data are read from one or more source NAND flash devices and stored in on-die SRAM of a destination NAND flash device until a limit of such blocks has been reached, then the destination NAND flash device programs the blocks from the on-die SRAM into NAND flash memory.

公开(公告)号：US20180232181A1

公开(公告)日：2018-08-16

申请号：US15954029

申请日：2018-04-16

Applicant: Huawei Technologies Co., Ltd.

Inventor： Meng Zhou ,  Kun Tang ,  Jui-Yao Yang ,  Jea Woong Hyun

IPC: G06F3/06 ,  G06F12/1009

Abstract: A storage system, includes a controller and a solid state disk. The controller creates multiple segments in advance, selects a first die from the multiple dies, selects a first segment from the multiple segments, determines an available offset of the first segment, generates a write request, where the write request includes a write address, target data, and a data length of the target data, and the write address includes an identifier of a channel coupled to the first die, an identifier of the first die, an identifier of the first segment, and the available offset, and sends the write request to the solid state disk. The solid state disk receives the write request, and stores the target data according to the write address and the data length.

公开(公告)号：US11210210B2

公开(公告)日：2021-12-28

申请号：US16884158

申请日：2020-05-27

Applicant: Huawei Technologies Co., Ltd.

Inventor： Xuechao Jia ,  Jea Woong Hyun ,  Tian Xia ,  Linfeng Chen

IPC: G06F12/02 ,  G06F11/07 ,  G06F11/30 ,  G06F12/0882 ,  G11C11/4074 ,  G11C11/408

Abstract: A read latency reduction method includes receiving a read request sent by a host, where the read request includes location indication information of requested data, obtaining, from read voltage management information based on a first physical location indicated by the location indication information, a read voltage corresponding to a first storage area in which the first physical location is located, the flash array includes a plurality of storage areas, the read voltage management information includes a correspondence between a storage area and a read voltage, and the read voltage in the read voltage management information is dynamically updated, and obtaining the requested data based on the read voltage corresponding to the first storage area, and sending the requested data to the host.

公开(公告)号：US20200285575A1

公开(公告)日：2020-09-10

申请号：US16884158

申请日：2020-05-27

Applicant: Huawei Technologies Co., Ltd.

Inventor： Xuechao Jia ,  Jea Woong Hyun ,  Tian Xia ,  Linfeng Chen

IPC: G06F12/02 ,  G06F12/0882 ,  G06F11/07 ,  G06F11/30 ,  G11C11/4074 ,  G11C11/408

Abstract: A read latency reduction method includes receiving a read request sent by a host, where the read request includes location indication information of requested data, obtaining, from read voltage management information based on a first physical location indicated by the location indication information, a read voltage corresponding to a first storage area in which the first physical location is located, the flash array includes a plurality of storage areas, the read voltage management information includes a correspondence between a storage area and a read voltage, and the read voltage in the read voltage management information is dynamically updated, and obtaining the requested data based on the read voltage corresponding to the first storage area, and sending the requested data to the host.

公开(公告)号：US10768857B2

公开(公告)日：2020-09-08

申请号：US15954029

申请日：2018-04-16

Applicant: Huawei Technologies Co., Ltd.

Inventor： Meng Zhou ,  Kun Tang ,  Jui-Yao Yang ,  Jea Woong Hyun

IPC: G06F3/06 ,  G06F12/1009 ,  G06F12/02

Abstract: A storage system, includes a controller and a solid state disk. The controller creates multiple segments in advance, selects a first die from the multiple dies, selects a first segment from the multiple segments, determines an available offset of the first segment, generates a write request, where the write request includes a write address, target data, and a data length of the target data, and the write address includes an identifier of a channel coupled to the first die, an identifier of the first die, an identifier of the first segment, and the available offset, and sends the write request to the solid state disk. The solid state disk receives the write request, and stores the target data according to the write address and the data length.