公开(公告)号：US08907374B2

公开(公告)日：2014-12-09

申请号：US14134066

申请日：2013-12-19

Applicant: Huawei Technologies Co., Ltd.

Inventor： Yisheng Zhu ,  Jinping Zhang

IPC: H01L29/06 ,  H01L29/739 ,  H01L29/08

CPC classification number: H01L29/0619 ,  H01L29/0623 ,  H01L29/0653 ,  H01L29/0834 ,  H01L29/7395 ,  H01L29/7397

Abstract: Embodiments of the present invention provide an IGBT, which relates to the field of integrated circuit manufacturing, and may improve a problem of tail current when the IGBT is turned off. The IGBT includes a cell region on a front surface, a terminal region surrounding the cell region, an IGBT drift region of a first conductivity type, and an IGBT collector region on a back surface. The IGBT collector region is connected to the IGBT drift region and under the IGBT drift region. The IGBT drift region includes a first drift region under the cell region and a second drift region under the terminal region. The IGBT collector region includes a cell collector region of a heavily doped second conductivity type under the first drift region and a non-conductive isolation region adjacent to the cell collector region.

Abstract translation: 本发明的实施例提供一种涉及集成电路制造领域的IGBT，并且可以在IGBT关断时改善尾电流的问题。 IGBT包括前表面上的单元区域，围绕单元区域的端子区域，第一导电类型的IGBT漂移区域和背面上的IGBT集电极区域。 IGBT集电极区域连接到IGBT漂移区域和IGBT漂移区域。 IGBT漂移区域包括单元区域下方的第一漂移区域和端子区域下方的第二漂移区域。 IGBT集电极区域包括在第一漂移区域下方的重掺杂第二导电类型的单元集电极区域和与单元集电极区域相邻的非导电隔离区域。

公开(公告)号：US20140209971A1

公开(公告)日：2014-07-31

申请号：US14134066

申请日：2013-12-19

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Yisheng Zhu ,  Jinping Zhang

IPC: H01L29/06 ,  H01L29/739

CPC classification number: H01L29/0619 ,  H01L29/0623 ,  H01L29/0653 ,  H01L29/0834 ,  H01L29/7395 ,  H01L29/7397

Abstract: Embodiments of the present invention provide an IGBT, which relates to the field of integrated circuit manufacturing, and may improve a problem of tail current when the IGBT is turned off. The IGBT includes a cell region on a front surface, a terminal region surrounding the cell region, an IGBT drift region of a first conductivity type, and an IGBT collector region on a back surface. The IGBT collector region is connected to the IGBT drift region and under the IGBT drift region. The IGBT drift region includes a first drift region under the cell region and a second drift region under the terminal region. The IGBT collector region includes a cell collector region of a heavily doped second conductivity type under the first drift region and a non-conductive isolation region adjacent to the cell collector region.

Abstract translation: 本发明的实施例提供一种涉及集成电路制造领域的IGBT，并且可以在IGBT关断时改善尾电流的问题。 IGBT包括前表面上的单元区域，围绕单元区域的端子区域，第一导电类型的IGBT漂移区域和背面上的IGBT集电极区域。 IGBT集电极区域连接到IGBT漂移区域和IGBT漂移区域。 IGBT漂移区域包括单元区域下方的第一漂移区域和端子区域下方的第二漂移区域。 IGBT集电极区域包括在第一漂移区域下方的重掺杂的第二导电类型的单元集电极区域和与单元集电极区域相邻的非导电隔离区域。